公开(公告)号：US12165845B2

公开(公告)日：2024-12-10

申请号：US18056294

申请日：2022-11-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shogo Okita ,  Yoshiyuki Wada ,  Takahiro Miyai ,  Naoaki Takeda ,  Toshihiro Wada ,  Toshiyuki Takasaki

IPC: H01J37/32

Abstract: Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.

公开(公告)号：US09779986B2

公开(公告)日：2017-10-03

申请号：US15245139

申请日：2016-08-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Atsushi Harikai ,  Noriyuki Matsubara ,  Hideo Kanou ,  Mitsuru Hiroshima ,  Syouzou Watanabe ,  Toshihiro Wada

IPC: H01L21/78 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/78

Abstract: Provided is a plasma treatment method including: placing a substrate carrier holding a substrate on a stage; adjusting a distance between a cover and the stage to a first distance in which the cover covers a frame without coming into contact with the substrate carrier; performing a plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from a reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, in which the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.

公开(公告)号：US11881380B2

公开(公告)日：2024-01-23

申请号：US17503611

申请日：2021-10-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toshihiro Wada ,  Naoaki Takeda

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32651

Abstract: A plasma processing apparatus 100 including: a chamber 101 having a dielectric window; a coil 102 placed outside the chamber so as to face the dielectric window; a FS electrode 103 having a plate shape and placed on the chamber side of the coil; a first power source 104 for supplying a high-frequency power of a first frequency to the coil 102; a second power source 105 for supplying a high-frequency power of a second frequency which is different from the first frequency, to the FS electrode 103; a first matcher 106 placed between the first power source and the coil; a second matcher 107 placed between the second power source and the FS electrode; and a first frequency attenuation filter connected between the second matcher and the FS electrode, and configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency.