公开(公告)号：US20150111119A1

公开(公告)日：2015-04-23

申请号：US14509361

申请日：2014-10-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SATORU TAMURA ,  KAZUHITO HATO ,  TAKAIKI NOMURA ,  TAKAHIRO SUZUKI ,  YOSHIHIRO KOZAWA ,  RYOSUKE KIKUCHI

IPC: C25B1/00 ,  C25B11/04 ,  H01M8/06 ,  C25B1/04

CPC classification number: C25B1/003 ,  C25B1/04 ,  C25B11/0452 ,  C25B11/0478 ,  H01M8/04201 ,  H01M8/0656 ,  Y02E60/368 ,  Y02P20/135

Abstract: Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.

Abstract translation: 提供了包括第一导电层的半导体光电极; 设置在所述第一导电层上的第一n型半导体层; 以及覆盖所述第一n型半导体层的第二导电层。 第一n型半导体层具有第一n型表面区域和第二n型表面区域。 第一n型表面区域与第一导电层接触。 第二n型表面区域与第二导电层接触。 第一n型半导体层由选自氮化物半导体和氧氮化物半导体的至少一种形成。 第二导电层是透光的。 第二导电层由p型氧化物导体形成。

公开(公告)号：US20150329976A1

公开(公告)日：2015-11-19

申请号：US14810201

申请日：2015-07-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SATORU TAMURA ,  KAZUHITO HATO ,  TAKAIKI NOMURA ,  TAKAHIRO KURABUCHI ,  YOSHIHIRO KOZAWA ,  RYOUSUKE KIKUCHI

IPC: C25B1/00 ,  C25B11/04 ,  C25B1/04

CPC classification number: C25B1/003 ,  B01J23/20 ,  B01J35/0033 ,  B01J35/004 ,  B01J37/0244 ,  B01J37/34 ,  B01J37/347 ,  B01J37/349 ,  C25B1/04 ,  C25B11/04 ,  C25B11/0405 ,  C25B11/0478 ,  Y02E60/364 ,  Y02E60/368

Abstract: Provided is a method for generating hydrogen. The method comprising (a) preparing a hydrogen generation device comprising a container, a photo-semiconductor electrode comprising a substrate, a light-blocking first conductive layer, and a first semiconductor photocatalyst layer, a counter electrode, a conductive wire for electrically connecting the first conductive layer to the counter electrode, and a liquid stored in the container, and (b) irradiating the first semiconductor photocatalyst layer with light to generate hydrogen on the counter electrode. The first conductive layer is interposed between the substrate and the first semiconductor photocatalyst layer. At least a part of the first semiconductor photocatalyst layer is in contact with the liquid. At least a part of the counter electrode is in contact with the liquid. The liquid is selected from the group consisting of an electrolyte aqueous solution and water. The substrate is formed of a resin.

Abstract translation: 提供了一种产生氢的方法。 该方法包括：（a）制备氢生成装置，其包括容器，包含基板的光电半导体电极，遮光第一导电层和第一半导体光催化剂层，对电极，用于将 第一导电层到对电极，以及存储在容器中的液体，和（b）用光照射第一半导体光催化剂层以在对电极上产生氢。 第一导电层插入在基板和第一半导体光催化剂层之间。 第一半导体光催化剂层的至少一部分与液体接触。 反电极的至少一部分与液体接触。 液体选自电解质水溶液和水。 基板由树脂形成。