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    Integrated devices on a common compound semiconductor III-V wafer
    1.
    发明授权
    Integrated devices on a common compound semiconductor III-V wafer 失效
    在普通化合物半导体III-V晶片上的集成器件

    公开(公告)号：US08309990B2

    公开(公告)日：2012-11-13

    申请号：US13397367

    申请日：2012-02-15

    申请人： Paul Cooke ,  Richard W. Hoffman, Jr. ,  Victor Labyuk ,  Sherry Qianwen Ye

    发明人： Paul Cooke ,  Richard W. Hoffman, Jr. ,  Victor Labyuk ,  Sherry Qianwen Ye

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02661 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/66924

    摘要： A III-V compound semiconductor structure comprises epitaxial structures that include an integrated pair of different types of active devices. The semiconductor structure includes a semi-insulating substrate of a compound semiconductor III-V material and a first compound semiconductor III-V epitaxial structure disposed on the substrate. A concentration profile of dopant material in the semiconductor structure decreases substantially smoothly across an interface between the substrate and the first epitaxial structure in a direction from the first epitaxial structure toward the substrate, and continues to decrease substantially smoothly from the interface with increasing depth into the substrate despite the presence of silicon or oxygen contaminant at the interface. The interface is substantially free of a second contaminant that was present, during formation of the first epitaxial structure, in a chamber in which the first epitaxial structure was formed.

    摘要翻译： III-V族化合物半导体结构包括外延结构，其包括一组不同类型的有源器件。 半导体结构包括化合物半导体III-V材料的半绝缘衬底和设置在衬底上的第一化合物半导体III-V外延结构。 半导体结构中的掺杂剂材料的浓度分布在从第一外延结构朝向衬底的方向上在衬底和第一外延结构之间的界面上基本上平滑地减小，并且从接口的基本上平滑地减小到深入到 衬底，尽管在界面处存在硅或氧污染物。 在第一外延结构形成期间，该界面基本上不含有形成第一外延结构的腔室中存在的第二污染物。

    Integrated devices on a common compound semiconductor III-V wafer
    3.
    发明授权
    Integrated devices on a common compound semiconductor III-V wafer 有权
    在普通化合物半导体III-V晶片上的集成器件

    公开(公告)号：US07893463B2

    公开(公告)日：2011-02-22

    申请号：US12778307

    申请日：2010-05-12

    申请人： Paul Cooke ,  Richard W. Hoffman, Jr. ,  Victor Labyuk ,  Sherry Qianwen Ye

    发明人： Paul Cooke ,  Richard W. Hoffman, Jr. ,  Victor Labyuk ,  Sherry Qianwen Ye

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66462 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02661 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/66924

    摘要： An integrated pair of HBT and FET transistors shares a common compound semiconductor III-V epitaxial layer. The integrated pair of transistors includes a semi-insulating substrate of a compound semiconductor III-V material, a first epitaxial structure disposed on top of the substrate, a second epitaxial structure on top of the first epitaxial structure, and a third epitaxial structure disposed on top of the second epitaxial structure. The first epitaxial structure forms a portion of the HBT transistor. A concentration profile of a first contaminant, which contributes electrical charge, decreases substantially smoothly across an interface between the semi-insulating substrate and the first epitaxial structure. In some cases, the interface is free of a second contaminant that was present, during formation of the epitaxial structures, in a chamber in which the epitaxial structures were formed.

    摘要翻译： 一对HBT和FET晶体管共享一个普通的化合物半导体III-V外延层。 集成的一对晶体管包括化合物半导体III-V材料的半绝缘衬底，设置在衬底顶部的第一外延结构，在第一外延结构的顶部上的第二外延结构和设置在第一外延结构上的第三外延结构 第二外延结构的顶部。 第一外延结构形成HBT晶体管的一部分。 有助于电荷的第一污染物的浓度分布通过半绝缘衬底和第一外延结构之间的界面基本平滑地减小。 在一些情况下，界面在形成外延结构的腔室中没有形成外延结构的第二污染物。

    BISPHENOL A AND AROMATIC GLYCIDYL ETHER-FREE COATINGS
    10.
    发明申请
    BISPHENOL A AND AROMATIC GLYCIDYL ETHER-FREE COATINGS 有权
    双酚A和芳香甘油醚无水涂层

    公开(公告)号：US20070036903A1

    公开(公告)日：2007-02-15

    申请号：US11463446

    申请日：2006-08-09

    申请人： Peter Mayr ,  Paul Cooke ,  Trevor Fielding ,  Ronald Goodwin ,  Gregory Paulson ,  James Robinson ,  Anthony Violleau

    发明人： Peter Mayr ,  Paul Cooke ,  Trevor Fielding ,  Ronald Goodwin ,  Gregory Paulson ,  James Robinson ,  Anthony Violleau

    IPC分类号： B05D1/36

    CPC分类号： B05D7/5483 ,  B05D7/14 ,  B05D7/53 ,  B05D7/542 ,  B65D25/14 ,  C08L61/00 ,  C09D5/106 ,  C09D167/00 ,  Y10T428/256 ,  Y10T428/31511 ,  Y10T428/31794 ,  Y10T428/31797 ,  C08L2666/16

    摘要： Disclosed are Bisphenol A (BPA), Bisphenol F, Bisphenol A diglycidyl ether (BADGE), and Bisphenol F diglycidyl ether (BFDGE)-free coating compositions for metal substrates including an under-coat composition containing a polyester (co)polymer, and an under-coat cross-linker; and an over-coat composition containing a poly(vinyl chloride) (co)polymer dispersed in a substantially nonaqueous carrier liquid, an over-coat cross-linker, and a functional (meth)acrylic (co)polymer. Also provided is a method of coating a metal substrate using the BPA, BPF, BADGE and BFDGE-free coating system to produce a hardened protective coating useful in fabricating metal storage containers. The coated substrate is particularly useful in fabricating multi-part foodstuffs storage containers with “easy-open” end closures.

    摘要翻译： 公开了包含含有聚酯（共）聚合物的底涂层组合物的金属基材的双酚A（BPA），双酚F，双酚A二缩水甘油醚（BADGE）和双酚F二缩水甘油醚（BFDGE）的涂料组合物， 底涂层交联剂; 以及包含分散在基本上非水性载体液体中的聚（氯乙烯）（共）聚合物，外涂层交联剂和官能（甲基）丙烯酸（共））聚合物的外涂层组合物。 还提供了使用BPA，BPF，BADGE和无BFDGE的涂层系统涂覆金属基材以产生用于制造金属储存容器的硬化保护涂层的方法。 涂覆的基材特别适用于制造具有“易开”端盖的多部件食品储存容器。