公开(公告)号：US08309297B2

公开(公告)日：2012-11-13

申请号：US11868328

申请日：2007-10-05

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/22

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US07737055B2

公开(公告)日：2010-06-15

申请号：US12272500

申请日：2008-11-17

申请人： Paul D. Shirley ,  Hiroyuki Mori

发明人： Paul D. Shirley ,  Hiroyuki Mori

IPC分类号： H01L21/00

CPC分类号： H01L21/6715

摘要： A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.

摘要翻译： 在其上制造集成电路器件的处理的半导体衬底围绕旋转轴旋转，同时将液体引入到衬底的表面上。 在表面上形成环状的液体片，该液体片具有限定无液体空隙的内径。 通过操作环形片状液体来减小空隙直径的大小。 然后可以扩大空隙，直到表面基本上干燥。 可以通过选择性地移动在其上引入液体的基板的表面上的接触区域来形成和改变环形片状液体。 还公开了用于处理基板并且被配置为在其上沉积和操纵一片液体的系统。

公开(公告)号：US20090068848A1

公开(公告)日：2009-03-12

申请号：US12272500

申请日：2008-11-17

申请人： Paul D. Shirley ,  Hiroyuki Mori

发明人： Paul D. Shirley ,  Hiroyuki Mori

IPC分类号： H01L21/30

CPC分类号： H01L21/6715

摘要： A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.

摘要翻译： 在其上制造集成电路器件的处理的半导体衬底围绕旋转轴旋转，同时将液体引入到衬底的表面上。 在表面上形成环状的液体片，该液体片具有限定无液体空隙的内径。 通过操作环形片状液体来减小空隙直径的大小。 然后可以扩大空隙，直到表面基本上干燥。 可以通过选择性地移动在其上引入液体的基板的表面上的接触区域来形成和改变环形片状液体。 还公开了用于处理基板并且被配置为在其上沉积和操纵一片液体的系统。

公开(公告)号：US07470638B2

公开(公告)日：2008-12-30

申请号：US11359730

申请日：2006-02-22

申请人： Paul D. Shirley ,  Hiroyuki Mori

发明人： Paul D. Shirley ,  Hiroyuki Mori

IPC分类号： H01L21/00

CPC分类号： H01L21/6715

摘要： A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.

摘要翻译： 在其上制造集成电路器件的处理的半导体衬底围绕旋转轴旋转，同时将液体引入到衬底的表面上。 在表面上形成环状的液体片，该液体片具有限定无液体空隙的内径。 通过操作环形片状液体来减小空隙直径的大小。 然后可以扩大空隙，直到表面基本上干燥。 可以通过选择性地移动在其上引入液体的基板的表面上的接触区域来形成和改变环形片状液体。 还公开了用于处理基板并且被配置为在其上沉积和操纵一片液体的系统。

公开(公告)号：US08859195B2

公开(公告)日：2014-10-14

申请号：US13659790

申请日：2012-10-24

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/22 ,  G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US08163468B2

公开(公告)日：2012-04-24

申请号：US12045373

申请日：2008-03-10

申请人： Yoshiki Hishiro ,  Lijing Gou ,  Scott E. Sills ,  Hiroyuki Mori ,  Paul D. Shirley ,  Troy V. Gugel ,  Adam L. Olson

发明人： Yoshiki Hishiro ,  Lijing Gou ,  Scott E. Sills ,  Hiroyuki Mori ,  Paul D. Shirley ,  Troy V. Gugel ,  Adam L. Olson

IPC分类号： G03F7/26

CPC分类号： G03F7/7065 ,  G03F7/423

摘要： Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.

摘要翻译： 描述了在半导体器件制造期间减少或消除水印型缺陷，并且可以包括使用若干实施例之一来处理光致抗蚀剂。 在一些实施例中，通过施加和去除牺牲外涂层来调节光致抗蚀剂表面来减少/消除缺陷形成的倾向。 在其它实施例中，通过在显影后处理期间将光致抗蚀剂表面暴露于缺陷剥离材料来减少/消除现有缺陷。

公开(公告)号：US20090092933A1

公开(公告)日：2009-04-09

申请号：US11868328

申请日：2007-10-05

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US08124326B2

公开(公告)日：2012-02-28

申请号：US12396941

申请日：2009-03-03

申请人： Paul D. Shirley ,  Hiroyuki Mori

发明人： Paul D. Shirley ,  Hiroyuki Mori

IPC分类号： G03F7/26

CPC分类号： G03F7/2022

摘要： A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E0. A sum of the flood dose and the pattern dose is less than the Dose To CD yet effective to resolve the pattern in the positive photoresist upon develop. After exposing the area to the flood dose and the pattern dose, the area of the positive photoresist is developed to resolve the pattern in the positive photoresist. Other embodiments are contemplated.

摘要翻译： 正性光致抗蚀剂构图的方法包括在衬底上提供正性光致抗蚀剂。 正性光致抗蚀剂的区域以低于具有正性光致抗蚀剂的图案的剂量至CD的剂量暴露于活化辐射的图案。 正光致抗蚀剂的面积以E0的1％至75％的剂量暴露于活化辐射。 洪水剂量和模式剂量的总和小于剂量至CD，但是在开发时有效解决正光致抗蚀剂中的图案。 在将该区域暴露于洪水剂量和图案剂量之后，显影正性光致抗蚀剂的面积以解决正性光致抗蚀剂中的图案。 预期其他实施例。

公开(公告)号：US20090226847A1

公开(公告)日：2009-09-10

申请号：US12045373

申请日：2008-03-10

申请人： Yoshiki Hishiro ,  Lijing Gou ,  Scott E. Sills ,  Hiroyuki Mori ,  Paul D. Shirley ,  Troy V. Gugel ,  Adam L. Olson

发明人： Yoshiki Hishiro ,  Lijing Gou ,  Scott E. Sills ,  Hiroyuki Mori ,  Paul D. Shirley ,  Troy V. Gugel ,  Adam L. Olson

IPC分类号： H01L21/47 ,  G03F7/00

CPC分类号： G03F7/7065 ,  G03F7/423

摘要： Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.

摘要翻译： 描述了在半导体器件制造期间减少或消除水印型缺陷，并且可以包括使用若干实施例之一来处理光致抗蚀剂。 在一些实施例中，通过施加和去除牺牲外涂层来调节光致抗蚀剂表面来减少/消除缺陷形成的倾向。 在其它实施例中，通过在显影后处理期间将光致抗蚀剂表面暴露于缺陷剥离材料来减少/消除现有缺陷。

公开(公告)号：US20130059255A1

公开(公告)日：2013-03-07

申请号：US13659790

申请日：2012-10-24

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.