公开(公告)号：US20130059255A1

公开(公告)日：2013-03-07

申请号：US13659790

申请日：2012-10-24

Applicant: Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

Inventor： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC: G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/203

Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

公开(公告)号：US08003482B2

公开(公告)日：2011-08-23

申请号：US12622171

申请日：2009-11-19

Applicant: William R. Brown ,  David Kewley ,  Adam Olson

Inventor： William R. Brown ,  David Kewley ,  Adam Olson

IPC: H01L21/302

CPC classification number: H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

Abstract: A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

Abstract translation: 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US20080141214A1

公开(公告)日：2008-06-12

申请号：US11634579

申请日：2006-12-06

Applicant: Todd Adam Olson

Inventor： Todd Adam Olson

IPC: G06F9/44

CPC classification number: G06F17/30424 ,  G06F17/30554 ,  G06Q10/06

Abstract: The present invention provides for tracking time spent on various activities in a software development project by one or more users working on the project. The present invention also stores this data to derive metrics and best practices. The metrics and best practices are compared with project data to analyze the current status of the project and to estimate the completion timeframe for the current project.

Abstract translation: 本发明提供用于跟踪由一个或多个在该项目上工作的用户在软件开发项目中的各种活动所花费的时间。 本发明还存储该数据以导出指标和最佳实践。 将指标和最佳做法与项目数据进行比较，分析项目的现状，并估计当前项目的完成时间。

公开(公告)号：US08309297B2

公开(公告)日：2012-11-13

申请号：US11868328

申请日：2007-10-05

Applicant: Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

Inventor： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC: G03F7/22

CPC classification number: G03F7/2022 ,  G03F7/203

Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

Abstract translation: 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US20110117719A1

公开(公告)日：2011-05-19

申请号：US12622171

申请日：2009-11-19

Applicant: William R. Brown ,  David Kewley ,  Adam Olson

Inventor： William R. Brown ,  David Kewley ,  Adam Olson

IPC: H01L21/306

CPC classification number: H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

Abstract: A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

Abstract translation: 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US08832639B2

公开(公告)日：2014-09-09

申请号：US11634579

申请日：2006-12-06

Applicant: Todd Adam Olson

Inventor： Todd Adam Olson

IPC: G06F9/44 ,  G06Q10/06

CPC classification number: G06F17/30424 ,  G06F17/30554 ,  G06Q10/06

Abstract: The present invention provides for tracking time spent on various activities in a software development project by one or more users working on the project. The present invention also stores this data to derive metrics and best practices. The metrics and best practices are compared with project data to analyze the current status of the project and to estimate the completion timeframe for the current project.

Abstract translation: 本发明提供用于跟踪由一个或多个在该项目上工作的用户在软件开发项目中的各种活动所花费的时间。 本发明还存储该数据以导出指标和最佳实践。 将指标和最佳做法与项目数据进行比较，分析项目的现状，并估计当前项目的完成时间。

公开(公告)号：US08673780B2

公开(公告)日：2014-03-18

申请号：US13196524

申请日：2011-08-02

Applicant: William R. Brown ,  David A. Kewley ,  Adam Olson

Inventor： William R. Brown ,  David A. Kewley ,  Adam Olson

IPC: H01L21/302 ,  H01L21/308

CPC classification number: H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

Abstract: A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

Abstract translation: 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US07698248B2

公开(公告)日：2010-04-13

申请号：US11657346

申请日：2007-01-24

Applicant: Todd Adam Olson

Inventor： Todd Adam Olson

IPC: G06F17/00 ,  G06N7/00 ,  G06N7/08

CPC classification number: G06Q10/06

Abstract: Systems and methods for auditing knowledge-based projects or methods wherein the users participate in and contribute to generating an automatically updating community data set for obtaining information for evaluating and comparing a target project to best practices and relevant comparables from within the community data to audit likelihood of success and to predict the outcome of the knowledge-based project, and to identify components for improvement or modification to improve the outcome.

Abstract translation: 用于审核基于知识的项目或方法的系统和方法，其中用户参与并有助于生成自动更新的社区数据集，用于获得用于评估和比较目标项目与社区数据中的最佳实践和相关可比性的信息，以便审核可能性 并预测知识型项目的成果，并确定改进或修改的组成部分，以改善结果。

公开(公告)号：US20080177791A1

公开(公告)日：2008-07-24

申请号：US11657346

申请日：2007-01-24

Applicant: Todd Adam Olson

Inventor： Todd Adam Olson

IPC: G06F7/00

CPC classification number: G06Q10/06

Abstract: Systems and methods for auditing knowledge-based projects or methods wherein the users participate in and contribute to generating an automatically updating community data set for obtaining information for evaluating and comparing a target project to best practices and relevant comparables from within the community data to audit likelihood of success and to predict the outcome of the knowledge-based project, and to identify components for improvement or modification to improve the outcome.

Abstract translation: 用于审核基于知识的项目或方法的系统和方法，其中用户参与并且有助于生成自动更新的社区数据集，以获得用于评估和比较目标项目与社区数据中的最佳实践和相关可比性的信息，以便审核可能性 并预测知识型项目的成果，并确定改进或修改的组成部分，以改善结果。

公开(公告)号：US08859195B2

公开(公告)日：2014-10-14

申请号：US13659790

申请日：2012-10-24

Applicant: Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

Inventor： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC: G03F7/22 ,  G03F7/20

CPC classification number: G03F7/2022 ,  G03F7/203

Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

Abstract translation: 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。