公开(公告)号：US08309297B2

公开(公告)日：2012-11-13

申请号：US11868328

申请日：2007-10-05

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/22

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US20130059255A1

公开(公告)日：2013-03-07

申请号：US13659790

申请日：2012-10-24

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

公开(公告)号：US08859195B2

公开(公告)日：2014-10-14

申请号：US13659790

申请日：2012-10-24

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/22 ,  G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US20090092933A1

公开(公告)日：2009-04-09

申请号：US11868328

申请日：2007-10-05

申请人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

发明人： Yoshiki Hishiro ,  Scott Sills ,  Hiroyuki Mori ,  Troy Gugel ,  Paul D. Shirley ,  Lijing Gou ,  Adam Olson

IPC分类号： G03F7/20

CPC分类号： G03F7/2022 ,  G03F7/203

摘要： A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

摘要翻译： 光刻图案化具有去除区域和非去除区域的光致抗蚀剂的基板的方法包括首先将至少不去除区域暴露于有效地增加非去除区域中的光致抗蚀剂的外表面粗糙度至少后显影 但是在用显影剂显影时，光致抗蚀剂的显影剂中的光致抗蚀剂溶解度无法改变，以从非去除区域中清除。 进行辐射到去除区域的第二次曝光是有效的，以改变光致抗蚀剂在显影剂中的溶解度，以使光致抗蚀剂在用显影剂显影时从除去区域中清除。 用显影剂显影光致抗蚀剂有效地从去除区域清除光致抗蚀剂，并且在非去除区域中留下光致抗蚀剂，其在非去除区域中的外表面粗糙度大于第一次曝光之前的表面粗糙度。 预期其他实现和实施例。

公开(公告)号：US10656064B2

公开(公告)日：2020-05-19

申请号：US15986608

申请日：2018-05-22

申请人： John D. Norwood ,  Virgilio Go Boncan ,  Kevin Madsen ,  Adam Olson

发明人： John D. Norwood ,  Virgilio Go Boncan ,  Kevin Madsen ,  Adam Olson

IPC分类号： G01N9/04 ,  F04B51/00 ,  F04B19/22 ,  E21B41/00 ,  F04B9/14 ,  G01N9/02

摘要： Embodiments of a quantifying force management system generally include a force applicator, a force indicator, and a force application assembly that includes a housing having an internal bore, a housing cap, and a force translator. In various embodiments, a portion of the force applicator extends through a housing cap opening wherein a force applicator bottom surface contacts a force translator top surface within the housing bore and whereby upon application of longitudinal force via the force applicator the force translator is compressed, and wherein the force indicator indicates the quantity of force being applied. In one aspect, embodiments of the quantifying force management system are incorporated in a piston assembly for use with a pressurized fluid density balance. A method of using the quantifying force management system, as a component of the piston assembly, in measuring the density of a liquid sample utilizing a fluid density balance is also provided.

公开(公告)号：US20180340875A1

公开(公告)日：2018-11-29

申请号：US15986608

申请日：2018-05-22

申请人： John D. Norwood ,  Virgilio Go Boncan ,  Kevin Madsen ,  Adam Olson

发明人： John D. Norwood ,  Virgilio Go Boncan ,  Kevin Madsen ,  Adam Olson

IPC分类号： G01N9/04 ,  E21B41/00 ,  F04B19/22 ,  F04B51/00

摘要： Embodiments of a quantifying force management system generally include a force applicator, a force indicator, and a force application assembly that includes a housing having an internal bore, a housing cap, and a force translator. In various embodiments, a portion of the force applicator extends through a housing cap opening wherein a force applicator bottom surface contacts a force translator top surface within the housing bore and whereby upon application of longitudinal force via the force applicator the force translator is compressed, and wherein the force indicator indicates the quantity of force being applied. In one aspect, embodiments of the quantifying force management system are incorporated in a piston assembly for use with a pressurized fluid density balance. A method of using the quantifying force management system, as a component of the piston assembly, in measuring the density of a liquid sample utilizing a fluid density balance is also provided.

公开(公告)号：US08003482B2

公开(公告)日：2011-08-23

申请号：US12622171

申请日：2009-11-19

申请人： William R. Brown ,  David Kewley ,  Adam Olson

发明人： William R. Brown ,  David Kewley ,  Adam Olson

IPC分类号： H01L21/302

CPC分类号： H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

摘要翻译： 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US20110117719A1

公开(公告)日：2011-05-19

申请号：US12622171

申请日：2009-11-19

申请人： William R. Brown ,  David Kewley ,  Adam Olson

发明人： William R. Brown ,  David Kewley ,  Adam Olson

IPC分类号： H01L21/306

CPC分类号： H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

摘要翻译： 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US08673780B2

公开(公告)日：2014-03-18

申请号：US13196524

申请日：2011-08-02

申请人： William R. Brown ,  David A. Kewley ,  Adam Olson

发明人： William R. Brown ,  David A. Kewley ,  Adam Olson

IPC分类号： H01L21/302 ,  H01L21/308

CPC分类号： H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

摘要翻译： 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。

公开(公告)号：US20110287630A1

公开(公告)日：2011-11-24

申请号：US13196524

申请日：2011-08-02

申请人： William R. Brown ,  David Kewley ,  Adam Olson

发明人： William R. Brown ,  David Kewley ,  Adam Olson

IPC分类号： H01L21/308 ,  H01L21/302

CPC分类号： H01L21/308 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/0337 ,  H01L21/3086

摘要： A method of processing a semiconductor substrate in forming scribe line alignment marks includes forming pitch multiplied non-circuitry features within scribe line area of a semiconductor substrate. Individual of the features, in cross-section, have a maximum width which is less than a minimum photolithographic feature dimension used in lithographically patterning the substrate. Photoresist is deposited over the features. Such is patterned to form photoresist blocks that are individually received between a respective pair of the features in the cross-section. Individual of the features of the respective pairs have a laterally innermost sidewall in the cross-section. Individual of the photoresist blocks have an opposing pair of first pattern edges in the cross-section that are spaced laterally inward of the laterally innermost sidewalls of the respective pair of the features. Individual of the photoresist blocks have an opposing pair of second pattern edges in the cross-section that self-align laterally outward of the first pattern edges to the laterally innermost sidewalls of the features during the patterning.

摘要翻译： 在形成划线对准标记中处理半导体衬底的方法包括在半导体衬底的划线区域内形成间距倍数非电路特征。 在横截面中，特征的个体具有小于在光刻图案化基底中使用的最小光刻特征尺寸的最大宽度。 光刻胶沉积在特征上。 将其图案化以形成在横截面中单独地接收在相应的一对特征之间的光致抗蚀剂块。 各对的特征的个体在横截面中具有横向最内侧的侧壁。 光致抗蚀剂块的个体在横截面中具有相对的一对第一图案边缘，其横向相对于相应的一对特征的横向最内侧的侧壁向内间隔开。 光致抗蚀剂块的个体在横截面中具有相对的一对第二图案边缘，其在图案化期间自动对准第一图案边缘的横向外侧到特征的侧向最内侧。