摘要:
A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.
摘要:
Acicula of rare earth pentaphosphates, of a diameter and length ideal for waveguiding laser-type applications, are grown by controlling the rate of metaphosphoric acid conversion by introducing water vapor into an inert gas atmosphere continuously flowed through the reaction zone. The required amount of water vapor in the reaction zone has to be within the range between approximately 14 grams per cubic meter and 290 grams per cubic meter of the flowing atmosphere. This control is implemented by bubbling the inert gas atmosphere through a water bath at temperatures between 15.degree. and 80.degree. C. It is believed that the control of the water vapor eliminates problems of supersaturation in the forming of pentaphosphoric crystals in the growth solution and thereby promotes their natural tendency to form purely chainlike polymer structures.
摘要:
The specification describes a test procedure for evaluating the susceptibility of electronic and photonic device packages to degradation effects caused by ambient hydrogen in the device package during the service life of the packaged device. The test procedure uses a hydrogen soak in which the subassembly parts are immersed in high concentrations of hydrogen gas at moderately elevated temperatures. The hydrogen gas is preferably diluted with an inert gas such as nitrogen or argon for safety in handling and processing. The test procedure can be used to screen components once their susceptibility to hydrogen attack has been established.