Process for growing acicula of rare earth pentaphosphates
    2.
    发明授权
    Process for growing acicula of rare earth pentaphosphates 失效
    生长五氯化磷稀土的方法

    公开(公告)号:US4002725A

    公开(公告)日:1977-01-11

    申请号:US594193

    申请日:1975-07-09

    摘要: Acicula of rare earth pentaphosphates, of a diameter and length ideal for waveguiding laser-type applications, are grown by controlling the rate of metaphosphoric acid conversion by introducing water vapor into an inert gas atmosphere continuously flowed through the reaction zone. The required amount of water vapor in the reaction zone has to be within the range between approximately 14 grams per cubic meter and 290 grams per cubic meter of the flowing atmosphere. This control is implemented by bubbling the inert gas atmosphere through a water bath at temperatures between 15.degree. and 80.degree. C. It is believed that the control of the water vapor eliminates problems of supersaturation in the forming of pentaphosphoric crystals in the growth solution and thereby promotes their natural tendency to form purely chainlike polymer structures.

    摘要翻译: 通过将水蒸气引入连续流过反应区的惰性气体气氛中,通过控制偏磷酸转化率来生长直径和长度为理想的波导激光型应用的直径和长度的稀土五磷酸钙。 反应区域中所需的水蒸气量必须在约14克/立方米和290克/立方米流动气氛之间的范围内。 该控制通过使惰性气体气氛通过在15℃和80℃之间的水浴鼓泡来实现。据信,水蒸汽的控制消除了在生长溶液中形成五磷酸晶体过饱和的问题,从而 促进其形成纯链状聚合物结构的自然趋势。

    Method for testing and screening electronic and photonic packages for
hydrogen damage susceptibility
    3.
    发明授权
    Method for testing and screening electronic and photonic packages for hydrogen damage susceptibility 失效
    用于测试和筛选电子和光子包装用于氢损伤易感性的方法

    公开(公告)号:US5744733A

    公开(公告)日:1998-04-28

    申请号:US831583

    申请日:1997-04-09

    IPC分类号: G01N17/00

    CPC分类号: G01N17/00

    摘要: The specification describes a test procedure for evaluating the susceptibility of electronic and photonic device packages to degradation effects caused by ambient hydrogen in the device package during the service life of the packaged device. The test procedure uses a hydrogen soak in which the subassembly parts are immersed in high concentrations of hydrogen gas at moderately elevated temperatures. The hydrogen gas is preferably diluted with an inert gas such as nitrogen or argon for safety in handling and processing. The test procedure can be used to screen components once their susceptibility to hydrogen attack has been established.

    摘要翻译: 本说明书描述了一种用于评估电子和光子器件封装对于在封装器件的使用寿命期间由器件封装中的环境氢引起的降解效应的测试程序。 测试程序使用氢气浸泡,其中将组件部件浸入中等升高的高浓度氢气中。 氢气优选用惰性气体例如氮气或氩气稀释,以便于处理和处理的安全性。 一旦它们对氢气攻击的敏感性已经建立,测试程序可用于筛选组件。