SUBSTRATE TEMPERATURE UNIFORMITY DURING RAPID SUBSTRATE HEATING
    4.
    发明申请
    SUBSTRATE TEMPERATURE UNIFORMITY DURING RAPID SUBSTRATE HEATING 有权
    在快速基板加热期间的基板温度均匀性

    公开(公告)号:US20120234230A1

    公开(公告)日:2012-09-20

    申请号:US13049763

    申请日:2011-03-16

    IPC分类号: C30B25/16 C30B25/02

    摘要: A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake.

    摘要翻译: 提供了一种系统和方法用于低温,快速烘烤以在原位沉积之前从半导体表面去除杂质。 该系统配置有垂直于气体流动路径的上部热元件组,使得当衬底被加热时,通过分区加热可以使衬底上的温度保持相对均匀。 有利地,短的低温工艺适用于具有浅结的先进的高密度电路。 此外,通过低温烘烤大大提高了产量。