公开(公告)号：US4970395A

公开(公告)日：1990-11-13

申请号：US289276

申请日：1988-12-23

申请人： Paul W. Kruse, Jr.

发明人： Paul W. Kruse, Jr.

IPC分类号： H01L39/10

CPC分类号： H01L39/225 ,  Y10S505/701 ,  Y10S505/848 ,  Y10S505/849

摘要： A photon detector based upon photon-assisted tunneling in superconductor-insulator-superconductor or super-Schottky structures, in which the superconductor is a high transition temperature superconductor. An electrical bias is provided on either side of such structures so that photo-assisted tunneling, in the presence of incident photons on the structure, can occur to thereby permit a tunneling current therebetween.

摘要翻译： 基于超导体 - 绝缘体 - 超导体或超肖特基结构中的光子辅助隧道的光子检测器，其中超导体是高转变温度超导体。 在这种结构的任一侧上提供电偏压，使得在存在结构上的入射光子的情况下可以发生光辅助隧道，从而允许其间的隧道电流。

公开(公告)号：US4654622A

公开(公告)日：1987-03-31

申请号：US781557

申请日：1985-09-30

申请人： Norman A. Foss ,  Paul W. Kruse, Jr. ,  R. Andrew Wood

发明人： Norman A. Foss ,  Paul W. Kruse, Jr. ,  R. Andrew Wood

IPC分类号： G01J5/20 ,  H01L27/146 ,  H01Q1/38 ,  H01Q5/00 ,  H01Q5/42 ,  H01Q9/06 ,  H01Q9/16 ,  H01Q15/02 ,  H01Q19/06 ,  H01C7/00

CPC分类号： H01Q19/062 ,  G01J5/0837 ,  G01J5/20 ,  H01L27/14603 ,  H01Q1/38 ,  H01Q15/02 ,  H01Q5/42 ,  H01Q9/065 ,  H01Q9/16

摘要： A monolithic integrated focal plane sensor array having elements sensitive to IR radiation and elements sensitive to mm-wave radiation. The sensor elements of the array sensitive to mm-wave have microantennas coupled to the sensors.

摘要翻译： 单片集成焦平面传感器阵列，其具有对IR辐射敏感的元件和对mm波辐射敏感的元件。 对mm波段敏感的阵列的传感器元件具有耦合到传感器的微型天线。

公开(公告)号：US5293041A

公开(公告)日：1994-03-08

申请号：US63182

申请日：1993-05-12

申请人： Paul W. Kruse, Jr.

发明人： Paul W. Kruse, Jr.

IPC分类号： G01J1/02 ,  G01J5/02 ,  G01J5/34 ,  H01L37/02 ,  G01J5/06

CPC分类号： G01J5/34 ,  H01L37/02 ,  G01J2005/345

摘要： A thin film pyroelectric imaging array fabricated as a Si wafer. A thin film of PbTiO.sub.3 is deposited on a thermally isolated bridge. The bridge suspends the PbTio.sub.3 sensor over a preferentially etched cavity in the Si wafer. Improved thermal isolation increases the responsivity of the sensor to incident radiation. The pyroelectric sensor formed can operate effectively at room temperature.

摘要翻译： 作为Si晶片制造的薄膜热电成像阵列。 PbTiO3薄膜沉积在隔热桥上。 该桥将PbTio3传感器悬挂在硅晶片中优先蚀刻的腔体上。 改进的热隔离增加了传感器对入射辐射的响应性。 形成的热电传感器可以在室温下有效地工作。

公开(公告)号：US4316147A

公开(公告)日：1982-02-16

申请号：US126633

申请日：1980-03-03

申请人： Muhammad A. Khan ,  Paul W. Kruse, Jr. ,  John F. Ready

发明人： Muhammad A. Khan ,  Paul W. Kruse, Jr. ,  John F. Ready

IPC分类号： G01N21/39 ,  G01R31/265 ,  G01N27/00

CPC分类号： G01R31/2656 ,  G01N21/39

摘要： Apparatus for determining the composition of mercury-cadmium-telluride or other alloy semiconductors by using a four-photon mixing phenomenon. Means are provided for a pair of colinear laser beams of different optical frequencies such that the colinear beams passed through a sample of Hg.sub.1-x Cd.sub.x Te or other alloy semiconductors to produce emissions beams of the original incident optical frequencies and two or more additional optical frequencies formed by an electron spin-flip interaction. A magnetic field means is employed for varying a magnetic field across the sample during passage of the colinear beam from the points substantially below to substantially above the resonant field of the sample to produce a spin-flip signal which has a peak amplitude. Detector means are adapted to receive the emission beams to identify the spin-flip signal peak from which the spin-level splitting factor can be measured. Upon measurement of the spin-level splitting factor, the value for x can be calculated in Hg.sub.1-x Cd.sub.x Te or other alloy semiconductor.

摘要翻译： 通过使用四光子混合现象来确定汞镉碲化物或其他合金半导体的组成的装置。 提供了用于不同光学频率的一对共线激光束的装置，使得共线束通过Hg1-xCdxTe或其他合金半导体的样品，以产生原始入射光频率的发射光束和由 电子自旋 - 翻转相互作用。 使用磁场装置来改变穿过样品的磁场，使得共线束从基本上低于基本上高于样品的谐振场的点开始，以产生具有峰值振幅的自旋触发信号。 检测器装置适于接收发射光束以识别可以从其测量自旋电平分裂因子的自旋触发信号峰值。 在测量自旋电平分解因子时，x的值可以在Hg1-xCdxTe或其他合金半导体中计算。

公开(公告)号：US4136318A

公开(公告)日：1979-01-23

申请号：US794889

申请日：1977-05-09

申请人： Paul W. Kruse, Jr.

发明人： Paul W. Kruse, Jr.

IPC分类号： H01S3/30 ,  H01S3/18

CPC分类号： H01S3/30

摘要： Disclosed are cascaded spin-flip Raman lasers involving alloy semiconductors such as mercury cadmium telluride with different energy gaps or with an energy gap gradient to provide for a relatively large change in frequency for a small change in field and enabling operation at low magnetic field levels where the output power and conversion efficiency are high.