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    Ion source having secondary electron enhancing electrode
    1.
    发明授权
    Ion source having secondary electron enhancing electrode 有权
    具有二次电子增强电极的离子源

    公开(公告)号：US08253314B2

    公开(公告)日：2012-08-28

    申请号：US12959601

    申请日：2010-12-03

    申请人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    发明人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC分类号： H01J27/00 ,  H01J27/02

    CPC分类号： H01J31/127 ,  H01J1/3044 ,  H01J29/04 ,  H01J2201/30411 ,  H01J2329/0415

    摘要： An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    摘要翻译： 提供了使用场发射装置的离子源。 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    Field emission device having secondary electron enhancing electrode
    2.
    发明授权
    Field emission device having secondary electron enhancing electrode 有权
    具有二次电子增强电极的场致发射器件

    公开(公告)号：US08237347B2

    公开(公告)日：2012-08-07

    申请号：US12959592

    申请日：2010-12-03

    申请人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    发明人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC分类号： H01J1/304 ,  H01J1/62

    CPC分类号： H01J3/021 ,  H01J9/148 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2203/0204 ,  H01J2329/0455 ,  H01J2329/46

    摘要： A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    摘要翻译： 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    Method for making field emission device
    3.
    发明授权
    Method for making field emission device 有权
    场致发射装置的制作方法

    公开(公告)号：US08246413B2

    公开(公告)日：2012-08-21

    申请号：US12959605

    申请日：2010-12-03

    申请人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    发明人： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC分类号： H01J1/00

    CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/32 ,  H01J3/021 ,  H01J9/125

    摘要： A method for making a field emission device includes the following steps. An insulative substrate is provided. An electron pulling electrode is formed on the insulative substrate. A secondary electron emission layer is formed on the electron pulling electrode. A first dielectric layer is fabricated. The first dielectric layer has a second opening to expose the secondary electron emission layer. A cathode plate having an electron output portion is provided. An electron emission layer is formed on part surface of the cathode plate. The cathode plate is placed on the first dielectric layer. The electron output portion and the second opening have at least one part overlapped, and at least one part of the electron emission layer is oriented to the secondary electron emission layer via the second opening.

    摘要翻译： 制造场发射装置的方法包括以下步骤。 提供绝缘基板。 在绝缘基板上形成电子牵引电极。 在电子牵引电极上形成二次电子发射层。 制造第一介电层。 第一介电层具有第二开口以暴露二次电子发射层。 提供具有电子输出部分的阴极板。 在阴极板的部分表面上形成电子发射层。 阴极板放置在第一电介质层上。 电子输出部分和第二开口具有至少一个部分重叠，并且电子发射层的至少一部分经由第二开口被定向到二次电子发射层。

    Reference leak
    4.
    发明授权
    Reference leak 有权
    参考泄漏

    公开(公告)号：US07353687B2

    公开(公告)日：2008-04-08

    申请号：US11228821

    申请日：2005-09-16

    申请人： Jie Tang ,  Liang Liu ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

    发明人： Jie Tang ,  Liang Liu ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

    IPC分类号： G01F25/00

    CPC分类号： G01M3/007

    摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.

    摘要翻译： 参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜，镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。

    Reference leak
    5.
    发明申请
    Reference leak 有权
    参考泄漏

    公开(公告)号：US20060144120A1

    公开(公告)日：2006-07-06

    申请号：US11228821

    申请日：2005-09-16

    申请人： Jie Tang ,  Liang Liu ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

    发明人： Jie Tang ,  Liang Liu ,  Peng Liu ,  Zhao-Fu Hu ,  Bing-Chu Du ,  Cai-Lin Guo ,  Pi-Jin Chen ,  Shou-Shan Fan

    IPC分类号： G01F25/00

    CPC分类号： G01M3/007

    摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.

    摘要翻译： 参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜，镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。

    Field emission cathode and planar light source using the same
    8.
    发明申请
    Field emission cathode and planar light source using the same 有权
    场发射阴极和平面光源使用相同

    公开(公告)号：US20070063630A1

    公开(公告)日：2007-03-22

    申请号：US11438010

    申请日：2006-05-19

    申请人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    发明人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    IPC分类号： H01J1/00 ,  H01J19/06 ,  H01J63/04 ,  H01J1/62

    CPC分类号： H01J61/305 ,  B82Y10/00 ,  H01J1/304 ,  H01J31/127 ,  H01J61/26 ,  H01J63/06 ,  H01J2201/30469

    摘要： An exemplary field emission cathode includes an electrically conductive layer and an electron-emitting member formed thereon. The electron-emitting member includes an electron-emitting material configured for emitting electrons and a getter material configured for collecting outgassed materials. An exemplary planar light source includes an anode and a cathode spaced apart from the anode. The anode includes a first electrically conductive layer and a fluorescent layer formed on an inner surface of the first electrically conductive layer. The cathode includes a second electrically conductive layer and an electron-emitting member formed on an inner surface of the second electrically conductive layer which faces toward the fluorescent layer. The electron-emitting member includes an electron-emitting material and a getter material.

    摘要翻译： 示例性场致发射阴极包括形成在其上的导电层和电子发射构件。 电子发射部件包括被配置为发射电子的电子发射材料和构造成用于收集排气的吸气材料。 示例性的平面光源包括与阳极间隔开的阳极和阴极。 阳极包括形成在第一导电层的内表面上的第一导电层和荧光层。 阴极包括形成在第二导电层的面向荧光层的内表面上的第二导电层和电子发射元件。 电子发射部件包括电子发射材料和吸气材料。

    Field emission device having getter material
    9.
    发明申请
    Field emission device having getter material 有权
    具有吸气材料的场致发射装置

    公开(公告)号：US20070069631A1

    公开(公告)日：2007-03-29

    申请号：US11453453

    申请日：2006-06-14

    申请人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    发明人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    IPC分类号： H01J1/62

    CPC分类号： H01J29/467 ,  H01J29/94

    摘要： A field emission device (100) generally includes a front substrate (101) and a rear substrate (111) opposite thereto. The front substrate is formed with an anode (102). The rear substrate is formed with cathodes (112) facing the anode. A plurality of insulating portions (121) are formed on the rear substrate, each of which is arranged between every two neighboring cathodes. A plurality of gate electrodes are formed on top surfaces of the insulating portions 121. Each of the gate electrodes has a getter layer (123) thereon.

    摘要翻译： 场发射装置（100）通常包括与其相对的前基板（101）和后基板（111）。 前基板形成有阳极（102）。 后基板由面向阳极的阴极（112）形成。 在后基板上形成有多个绝缘部分（121），每个绝缘部分布置在每两个相邻的阴极之间。 在绝缘部分121的顶表面上形成多个栅电极。 每个栅极电极上具有吸气剂层（123）。

    Field emission cathode and planar light source using the same
    10.
    发明授权
    Field emission cathode and planar light source using the same 有权
    场发射阴极和平面光源使用相同

    公开(公告)号：US07812513B2

    公开(公告)日：2010-10-12

    申请号：US11438010

    申请日：2006-05-19

    申请人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    发明人： Cai-Lin Guo ,  Li Qian ,  Jie Tang ,  Liang Liu ,  Bing-Chu Du ,  Zhao-Fu Hu ,  Pi-Jin Chen ,  Shou-Shan Fan

    IPC分类号： H01J1/62

    CPC分类号： H01J61/305 ,  B82Y10/00 ,  H01J1/304 ,  H01J31/127 ,  H01J61/26 ,  H01J63/06 ,  H01J2201/30469

    摘要： An exemplary field emission cathode includes an electrically conductive layer and an electron-emitting member formed thereon. The electron-emitting member includes an electron-emitting material configured for emitting electrons and a getter material configured for collecting outgassed materials. An exemplary planar light source includes an anode and a cathode spaced apart from the anode. The anode includes a first electrically conductive layer and a fluorescent layer formed on an inner surface of the first electrically conductive layer. The cathode includes a second electrically conductive layer and an electron-emitting member formed on an inner surface of the second electrically conductive layer which faces toward the fluorescent layer. The electron-emitting member includes an electron-emitting material and a getter material.

    摘要翻译： 示例性场致发射阴极包括形成在其上的导电层和电子发射构件。 电子发射部件包括被配置为发射电子的电子发射材料和构造成用于收集排气的吸气材料。 示例性的平面光源包括与阳极间隔开的阳极和阴极。 阳极包括第一导电层和形成在第一导电层的内表面上的荧光层。 阴极包括形成在第二导电层的面向荧光层的内表面上的第二导电层和电子发射元件。 电子发射部件包括电子发射材料和吸气材料。