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    Electron beam device, cold field emitter, and method for regeneration of a cold field emitter
    2.
    发明授权
    Electron beam device, cold field emitter, and method for regeneration of a cold field emitter 有权

    公开(公告)号：US09847208B1

    公开(公告)日：2017-12-19

    申请号：US15233092

    申请日：2016-08-10

    Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

    Inventor： Pavel Adamec

    IPC: H01J1/144 ,  H01J1/15 ,  H01J37/073 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

    CPC classification number: H01J37/073 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2203/0204

    Abstract: The present disclosure provides an electron beam device (500) for inspecting a sample (10) with an electron beam, comprising an electron beam source comprising a cold field emitter (100) for emitting an electron beam, electron beam optics for directing and focusing the electron beam onto the sample (10), and a detector device (540) for detecting secondary charged particles generated by impingement of the electron beam on the sample (10). The cold field emitter (100) includes an emitter tip (110), a base arrangement (120) configured for supporting the emitter tip (110) and comprising a first base element (122) and a second base element (124), and a filament (130) having at least a first filament portion (132) and a second filament portion (134) attaching the emitter tip (110) to the base arrangement (120), wherein the first filament portion (132) extends between the emitter tip (110) and the first base element (122) and the second filament portion (134) extends between the emitter tip (110) and the second base element (124), wherein a length (L) of each of the first filament portion (132) and the second filament portion (134) is 4 mm or less, and wherein a diameter of a cross-section of each of the first filament portion (132) and the second filament portion (134) is 0.13 mm or less.

    Field emission device having secondary electron enhancing electrode
    3.
    发明授权
    Field emission device having secondary electron enhancing electrode 有权
    具有二次电子增强电极的场致发射器件

    公开(公告)号：US08237347B2

    公开(公告)日：2012-08-07

    申请号：US12959592

    申请日：2010-12-03

    Applicant: Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    Inventor： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC: H01J1/304 ,  H01J1/62

    CPC classification number: H01J3/021 ,  H01J9/148 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2203/0204 ,  H01J2329/0455 ,  H01J2329/46

    Abstract: A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    Abstract translation: 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    Virtual matrix control scheme for multiple spot X-ray source
    4.
    发明授权
    Virtual matrix control scheme for multiple spot X-ray source 有权
    多点X射线源的虚拟矩阵控制方案

    公开(公告)号：US07826594B2

    公开(公告)日：2010-11-02

    申请号：US12113726

    申请日：2008-05-01

    Applicant: Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

    Inventor： Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

    IPC: H05G1/08 ,  H01J35/06

    CPC classification number: H01J3/021 ,  H01J1/30 ,  H01J1/3048 ,  H01J3/027 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/319 ,  H01J2203/0204 ,  H01J2235/062 ,  H01J2235/068

    Abstract: A system and method for addressing individual electron emitters in an emitter array is disclosed. The system includes an emitter array comprising a plurality of emitter elements arranged in a non-rectangular layout and configured to generate at least one electron beam and a plurality of extraction grids positioned adjacent to the emitter array, each extraction grid being associated with at least one emitter element to extract the at least one electron beam therefrom. The field emitter array system also includes a plurality of voltage control channels connected to the plurality of emitter elements and the plurality of extraction grids such that each of the emitter elements and each of the extraction grids is individually addressable. In the field emitter array system, the number of voltage control channels is equal to the sum of a pair of integers closest in value whose product equals the number of emitter elements.

    Abstract translation: 公开了一种用于寻址发射极阵列中的各个电子发射体的系统和方法。 该系统包括发射器阵列，其包括以非矩形布局布置的多个发射体元件，并且被配置为产生至少一个电子束和邻近发射器阵列定位的多个提取栅格，每个提取栅格与至少一个 发射极元件从其中提取至少一个电子束。 场发射器阵列系统还包括连接到多个发射体元件和多个提取栅格的多个电压控制通道，使得每个发射极元件和每个提取栅格可单独寻址。 在场发射极阵列系统中，电压控制通道的数量等于产品等于发射极元件数量的最接近值的一对整数之和。

    Electron emission device and electron emission display using the same
    5.
    发明授权
    Electron emission device and electron emission display using the same 失效
    电子发射器件和使用其的电子发射显示器

    公开(公告)号：US07652419B2

    公开(公告)日：2010-01-26

    申请号：US11702539

    申请日：2007-02-06

    Applicant: Sang-Hyuck Ahn ,  Sang-Jo Lee ,  Byung-Gil Jea ,  Sang-Ho Jeon ,  Su-Bong Hong ,  Jin-Hui Cho

    Inventor： Sang-Hyuck Ahn ,  Sang-Jo Lee ,  Byung-Gil Jea ,  Sang-Ho Jeon ,  Su-Bong Hong ,  Jin-Hui Cho

    IPC: H01J1/62

    CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J29/467 ,  H01J29/481 ,  H01J2203/0204 ,  H01J2203/022 ,  H01J2203/0248 ,  H01J2329/041 ,  H01J2329/4617 ,  H01J2329/4647

    Abstract: An electron emission device includes a substrate, first electrodes formed on the substrate, electron emission regions electrically connected to the first electrodes, and second electrodes placed over the first electrodes such that the second electrodes are insulated from the first electrodes. The second electrodes have openings to expose the electron emission regions. A third electrode is placed over the second electrodes such that the third electrode is insulated from the second electrodes. The third electrode has openings communicating with the openings of the second electrodes. Each of the electron emission regions and the second electrodes simultaneously satisfy the following conditions: D2/D1≦0.579  (1), and D2≧1 μ  (2) where D1 indicates the width of each of the openings of the second electrode, and D2 indicates the width of each of the electron emission regions.

    Abstract translation: 电子发射装置包括基板，形成在基板上的第一电极，与第一电极电连接的电子发射区域，以及设置在第一电极上的第二电极，使得第二电极与第一电极绝缘。 第二电极具有露出电子发射区的开口。 第三电极放置在第二电极上，使得第三电极与第二电极绝缘。 第三电极具有与第二电极的开口连通的开口。 每个电子发射区和第二电极同时满足以下条件：D2 / D1和D2> =1μ（2）其中D1表示第二电极的每个开口的宽度，D2表示每个的宽度 的电子发射区域。

    FIELD EMISSION DEVICE
    7.
    发明申请
    FIELD EMISSION DEVICE 有权
    场发射装置

    公开(公告)号：US20110285271A1

    公开(公告)日：2011-11-24

    申请号：US12959592

    申请日：2010-12-03

    Applicant: PENG LIU ,  DUAN-LIANG ZHOU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  CAI-LIN GUO ,  BING-CHU DU ,  SHOU-SHAN FAN

    Inventor： PENG LIU ,  DUAN-LIANG ZHOU ,  PI-JIN CHEN ,  ZHAO-FU HU ,  CAI-LIN GUO ,  BING-CHU DU ,  SHOU-SHAN FAN

    IPC: H01J9/02

    CPC classification number: H01J3/021 ,  H01J9/148 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2203/0204 ,  H01J2329/0455 ,  H01J2329/46

    Abstract: A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    Abstract translation: 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    VIRTUAL MATRIX CONTROL SCHEME FOR MULTIPLE SPOT X-RAY SOURCE
    9.
    发明申请
    VIRTUAL MATRIX CONTROL SCHEME FOR MULTIPLE SPOT X-RAY SOURCE 有权
    用于多点X射线源的虚拟矩阵控制方案

    公开(公告)号：US20090185661A1

    公开(公告)日：2009-07-23

    申请号：US12113726

    申请日：2008-05-01

    Applicant: Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

    Inventor： Yun Zou ,  Mark E. Vermilyea ,  Louis Paul Inzinna ,  Antonio Caiafa

    IPC: H01J35/06 ,  H05B37/02

    CPC classification number: H01J3/021 ,  H01J1/30 ,  H01J1/3048 ,  H01J3/027 ,  H01J35/065 ,  H01J35/14 ,  H01J2201/319 ,  H01J2203/0204 ,  H01J2235/062 ,  H01J2235/068

    Abstract: A system and method for addressing individual electron emitters in an emitter array is disclosed. The system includes an emitter array comprising a plurality of emitter elements arranged in a non-rectangular layout and configured to generate at least one electron beam and a plurality of extraction grids positioned adjacent to the emitter array, each extraction grid being associated with at least one emitter element to extract the at least one electron beam therefrom. The field emitter array system also includes a plurality of voltage control channels connected to the plurality of emitter elements and the plurality of extraction grids such that each of the emitter elements and each of the extraction grids is individually addressable. In the field emitter array system, the number of voltage control channels is equal to the sum of a pair of integers closest in value whose product equals the number of emitter elements.

    Abstract translation: 公开了一种用于寻址发射极阵列中的各个电子发射体的系统和方法。 该系统包括发射器阵列，其包括以非矩形布局布置的多个发射体元件，并且被配置为产生至少一个电子束和邻近发射器阵列定位的多个提取栅格，每个提取栅格与至少一个 发射极元件从其中提取至少一个电子束。 场发射器阵列系统还包括连接到多个发射体元件和多个提取栅格的多个电压控制通道，使得每个发射极元件和每个提取栅格可单独寻址。 在场发射极阵列系统中，电压控制通道的数量等于产品等于发射极元件数量的最接近值的一对整数之和。

    FIELD EMISSION DEVICE AND ELECTRODE STRUCTURE THEREOF
    10.
    发明申请
    FIELD EMISSION DEVICE AND ELECTRODE STRUCTURE THEREOF 审中-公开
    场发射装置及其电极结构

    公开(公告)号：US20090015133A1

    公开(公告)日：2009-01-15

    申请号：US12061818

    申请日：2008-04-03

    Applicant: Woo-Hu TSAI ,  Tzung-Han Yang ,  Hsin-Ju Wu

    Inventor： Woo-Hu TSAI ,  Tzung-Han Yang ,  Hsin-Ju Wu

    IPC: H01J1/62

    CPC classification number: H01J1/304 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2203/0204 ,  H01J2203/0216

    Abstract: The present invention relates to a field emission device and an electrode structure thereof, comprising a starting base and a curved extending part formed on a surface of various shaped or dimensional structure. Therefore, the applied device and range is increased. The curved extending part is also for reducing the number of the contact point, as to simplify the procedure to design the peripheral circuit. Besides, a resisting section can be formed on the starting base. The resisting value of the resisting section is designed to provide various lighting effects.

    Abstract translation: 本发明涉及一种场发射器件及其电极结构，其包括起始基座和形成在各种形状或尺寸结构的表面上的弯曲的延伸部分。 因此，应用的设备和范围增加。 弯曲的延伸部分也用于减少接触点的数量，以简化设计外围电路的过程。 此外，可以在起始基座上形成抵抗部分。 电阻部分的电阻值被设计成提供各种照明效果。

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