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    SOFTWARE PIN ENTRY
    3.
    发明申请
    SOFTWARE PIN ENTRY 审中-公开
    软件PIN码输入

    公开(公告)号：US20130332360A1

    公开(公告)日：2013-12-12

    申请号：US13799724

    申请日：2013-03-13

    申请人： Oliver S. C. Quigley ,  Nathan McCauley ,  Bob Lee

    发明人： Oliver S. C. Quigley ,  Nathan McCauley ,  Bob Lee

    IPC分类号： G06Q20/32

    CPC分类号： G06Q20/4012 ,  G06F21/35 ,  G06Q20/322 ,  G06Q20/3226 ,  G06Q20/353 ,  G06Q20/3674 ,  G06Q20/3829 ,  G06Q2220/00 ,  G07F7/1041 ,  G07F7/1091 ,  G07F19/211 ,  H04L9/3226 ,  H04L9/3271 ,  H04L63/06 ,  H04L63/083 ,  H04L2209/805 ,  H04W12/06

    摘要： A card reader configured to read a smart card can be detachably connected to a mobile computing device. When the card reader is attached to the mobile device, an application installed on the mobile computing device permits the mobile device to communicate with the card reader in order to process transactions.Security measures can be used on the mobile device to prevent theft of a PIN during software PIN entry of a payment transaction. The mobile device can prevent the keypad or other input interface from displaying feedback. The mobile device can also prevent passcodes from being stolen by displaying media encoded with digital rights management (DRM) and by managing the media and user inputs at a secure server.A mobile device can securely communicate with a card reader for a payment transaction using asymmetric or symmetric encryption.

    摘要翻译： 被配置为读取智能卡的读卡器可以可拆卸地连接到移动计算设备。 当读卡器连接到移动设备时，安装在移动计算设备上的应用允许移动设备与读卡器通信以便处理交易。 可以在移动设备上使用安全措施，以防止在支付交易的软件PIN输入过程中盗用PIN码。 移动设备可以防止键盘或其他输入接口显示反馈。 移动设备还可以通过显示利用数字版权管理（DRM）编码的媒体并且通过在安全服务器处管理媒体和用户输入来防止密码被盗。 移动设备可以使用不对称或对称加密来安全地与读卡器通信用于支付交易。

    Definition of anti-fuse cell for programmable gate array application
    4.
    发明授权
    Definition of anti-fuse cell for programmable gate array application 失效
    用于可编程门阵列应用的反熔丝单元的定义

    公开(公告)号：US5923075A

    公开(公告)日：1999-07-13

    申请号：US630706

    申请日：1996-04-08

    申请人： Che-Chia Wei ,  Lap Chan ,  Bob Lee ,  Pom Suan Tan

    发明人： Che-Chia Wei ,  Lap Chan ,  Bob Lee ,  Pom Suan Tan

    IPC分类号： H01L27/118 ,  H01L29/00

    CPC分类号： H01L27/11803 ,  Y10S438/922

    摘要： A method for fabricating an anti-fuse cell using an undoped polysilicon film as a mask in defining the anti-fuse window is described. A layer of silicon oxide is provided over the surface of a semiconductor substrate. A first undoped polysilicon layer is deposited overlying the silicon oxide layer. The first undoped polysilicon layer is covered with a photoresist layer patterned to form a mask. The first undoped polysilicon layer and a portion of the silicon oxide layer are etched away where they are not covered by the mask to form a cell opening. The mask and the remaining silicon oxide within the cell opening are removed. An insulating layer is deposited over the surface of the first undoped polysilicon layer and within the cell opening. A second polysilicon layer is deposited overlying the insulating layer and doped. The second polysilicon layer is patterned to form an anti-fuse cell. Gate electrodes and source and drain regions are formed completing the fabrication of the integrated circuit device.

    摘要翻译： 描述了在限定反熔丝窗口中使用未掺杂的多晶硅膜作为掩模来制造抗熔丝电池的方法。 在半导体衬底的表面上设置一层氧化硅。 第一未掺杂的多晶硅层沉积在氧化硅层上。 第一未掺杂的多晶硅层被图案化以形成掩模的光致抗蚀剂层覆盖。 将第一未掺杂的多晶硅层和一部分氧化硅层蚀刻掉，其中它们不被掩模覆盖以形成电池开口。 除去孔中的掩模和剩余的氧化硅。 绝缘层沉积在第一未掺杂多晶硅层的表面上并且在电池开口内。 第二多晶硅层沉积在绝缘层上并掺杂。 将第二多晶硅层图案化以形成抗熔丝电池。 形成栅电极和源极和漏极区，完成集成电路器件的制造。

    Secure XML feeds
    5.
    发明授权
    Secure XML feeds 有权
    安全的XML订阅源

    公开(公告)号：US08612746B1

    公开(公告)日：2013-12-17

    申请号：US13073658

    申请日：2011-03-28

    申请人： Bob Lee

    发明人： Bob Lee

    IPC分类号： H04L29/06

    CPC分类号： G06F21/6218

    摘要： A system receives an Extensible Markup Language (XML) feed, where the XML feed includes a reference to secure content. The system downloads secure content from a remote location based on the reference included in the XML feed.

    摘要翻译： 系统接收可扩展标记语言（XML）Feed，其中XML Feed包含对安全内容的引用。 系统根据XML提要中的引用从远程位置下载安全内容。

    Secure XML feeds
    8.
    发明授权
    Secure XML feeds 有权
    安全的XML订阅源

    公开(公告)号：US07937582B1

    公开(公告)日：2011-05-03

    申请号：US11425599

    申请日：2006-06-21

    申请人： Bob Lee

    发明人： Bob Lee

    IPC分类号： G06F21/00 ,  G06F21/20 ,  G06F21/24

    CPC分类号： G06F21/6218

    摘要： A system receives an Extensible Markup Language (XML) feed, where the XML feed includes a reference to secure content. The system downloads secure content from a remote location based on the reference included in the XML feed.

    摘要翻译： 系统接收可扩展标记语言（XML）Feed，其中XML Feed包含对安全内容的引用。 系统根据XML提要中的引用从远程位置下载安全内容。

    Definition of anti-fuse cell for programmable gate array application
    10.
    发明授权
    Definition of anti-fuse cell for programmable gate array application 有权
    用于可编程门阵列应用的反熔丝单元的定义

    公开(公告)号：US06307248B1

    公开(公告)日：2001-10-23

    申请号：US09289890

    申请日：1999-04-12

    申请人： Che-Chia Wei ,  Lap Chan ,  Bob Lee ,  Poh Suan Tan

    发明人： Che-Chia Wei ,  Lap Chan ,  Bob Lee ,  Poh Suan Tan

    IPC分类号： H01L2900

    CPC分类号： H01L27/11803 ,  Y10S438/922

    摘要： A method for fabricating an anti-fuse cell using an undoped polysilicon film as a mask in defining the anti-fuse window is described. A layer of silicon oxide is provided over the surface of a semiconductor substrate. A first undoped polysilicon layer is deposited overlying the silicon oxide layer. The first undoped polysilicon layer is covered with a photoresist layer patterned to form a mask. The first undoped polysilicon layer and a portion of the silicon oxide layer are etched away where they are not covered by the mask to form a cell opening. The mask and the remaining silicon oxide within the cell opening are removed. An insulating layer is deposited over the surface of the first undoped polysilicon layer and within the cell opening. A second polysilicon layer is deposited overlying the insulating layer and doped. The second polysilicon layer is patterned to form an anti-fuse cell. Gate electrodes and source and drain regions are formed completing the fabrication of the integrated circuit device.

    摘要翻译： 描述了在限定反熔丝窗口中使用未掺杂的多晶硅膜作为掩模来制造抗熔丝电池的方法。 在半导体衬底的表面上设置一层氧化硅。 第一未掺杂的多晶硅层沉积在氧化硅层上。 第一未掺杂的多晶硅层被图案化以形成掩模的光致抗蚀剂层覆盖。 将第一未掺杂的多晶硅层和一部分氧化硅层蚀刻掉，其中它们不被掩模覆盖以形成电池开口。 除去孔中的掩模和剩余的氧化硅。 绝缘层沉积在第一未掺杂多晶硅层的表面上并且在电池开口内。 第二多晶硅层沉积在绝缘层上并掺杂。 将第二多晶硅层图案化以形成抗熔丝电池。 形成栅电极和源极和漏极区，完成集成电路器件的制造。