公开(公告)号：US07491985B2

公开(公告)日：2009-02-17

申请号：US11288843

申请日：2005-11-29

申请人： Peter J. Geiss ,  Peter B. Gray ,  Alvin J. Joseph ,  Qizhi Liu

发明人： Peter J. Geiss ,  Peter B. Gray ,  Alvin J. Joseph ,  Qizhi Liu

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/0821 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/66242 ,  H01L29/66318

摘要： A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath the shallow trench isolation region on the subcollector of the device. Specifically, the HBT of the present invention includes a substrate including at least a subcollector; a buried refractory metal silicide layer located on the subcollector; and a shallow trench isolation region located on a surface of the buried refractory metal silicide layer. The present invention also provides a method of fabricating such a HBT. The method includes forming a buried refractory metal silicide underneath the shallow trench isolation region on the subcollector of the device.

摘要翻译： 提供了用于高速BiCMOS应用的异步双极晶体管（HBT），其中通过在器件的子集电极上的浅沟槽隔离区域的下面提供掩埋难熔金属硅化物层来降低集电极电阻Rc。 具体地，本发明的HBT包括至少包括子集电极的基板; 位于子集电极上的埋置难熔金属硅化物层; 以及位于掩埋难熔金属硅化物层的表面上的浅沟槽隔离区域。 本发明还提供一种制造这种HBT的方法。 该方法包括在器件的子集电极上的浅沟槽隔离区域的下面形成埋置难熔金属硅化物。

公开(公告)号：US07002190B1

公开(公告)日：2006-02-21

申请号：US10711479

申请日：2004-09-21

申请人： Peter J. Geiss ,  Peter B. Gray ,  Alvin J. Joseph ,  Qizhi Liu

发明人： Peter J. Geiss ,  Peter B. Gray ,  Alvin J. Joseph ,  Qizhi Liu

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/0821 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/66242 ,  H01L29/66318

摘要： A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath the shallow trench isolation region on the subcollector of the device. Specifically, the HBT of the present invention includes a substrate including at least a subcollector; a buried refractory metal silicide layer located on the subcollector; and a shallow trench isolation region located on a surface of the buried refractory metal silicide layer. The present invention also provides a method of fabricating such a HBT. The method includes forming a buried refractory metal silicide underneath the shallow trench isolation region on the subcollector of the device.

公开(公告)号：US07625792B2

公开(公告)日：2009-12-01

申请号：US10599938

申请日：2005-04-06

申请人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

发明人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

IPC分类号： H01L21/8238

CPC分类号： H01L29/0804 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66287

摘要： Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinsic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

摘要翻译： 公开了一种双极互补金属氧化物半导体（BiCMOS）或NPN / PNP器件，其具有集电极，集电极之上的本征基极，与集电极相邻的浅沟槽隔离区，在本征基极之上的凸起的外部基极，T形发射极 在外部基极之上，邻近发射极的间隔物和通过间隔物与发射极分离的硅化物层。

公开(公告)号：US06911681B1

公开(公告)日：2005-06-28

申请号：US10709113

申请日：2004-04-14

申请人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

发明人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/10 ,  H01L29/739

CPC分类号： H01L29/0804 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66287

摘要： Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

摘要翻译： 公开了一种双极互补金属氧化物半导体（BiCMOS）或NPN / PNP器件，其具有集电极，集电极之上的本征基极，与集电极相邻的浅沟槽隔离区，在本征基极之上的凸起的外部基极，T形发射极 在离子基底之上，邻近发射极的间隔物，以及通过间隔物与发射极分离的硅化物层。

公开(公告)号：US20090020851A1

公开(公告)日：2009-01-22

申请号：US11614757

申请日：2006-12-21

申请人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

发明人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

IPC分类号： H01L21/331 ,  H01L29/73

CPC分类号： H01L29/41708 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7371

摘要： A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.

摘要翻译： 在双极互补金属氧化物半导体（BiCMOS）工艺中制造异质结双极晶体管（HBT）结构的方法在未被临时发射极和间隔物覆盖的区域中的基极区域上选择性地增厚氧化物层，使得临时 可以去除发射极，并且可以暴露基极 - 发射极结，而不会完全去除覆盖在未被临时发射极或间隔物覆盖的基极区域的区域上的氧化物。 结果，不需要光掩模去除临时发射体并露出基极 - 发射极结。

公开(公告)号：US08536012B2

公开(公告)日：2013-09-17

申请号：US13177146

申请日：2011-07-06

申请人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

发明人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC分类号： H01L21/331 ,  H01L21/02

CPC分类号： H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

摘要： Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

摘要翻译： 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US07709338B2

公开(公告)日：2010-05-04

申请号：US11614757

申请日：2006-12-21

申请人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

发明人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

IPC分类号： H01L21/331

CPC分类号： H01L29/41708 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7371

摘要： A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.

摘要翻译： 在双极互补金属氧化物半导体（BiCMOS）工艺中制造异质结双极晶体管（HBT）结构的方法在未被临时发射极和间隔物覆盖的区域中的基极区域上选择性地增厚氧化物层，使得临时 可以去除发射极，并且可以暴露基极 - 发射极结，而不会完全去除覆盖在未被临时发射极或间隔物覆盖的基极区域的区域上的氧化物。 结果，不需要光掩模去除临时发射体并露出基极 - 发射极结。

公开(公告)号：US20130009280A1

公开(公告)日：2013-01-10

申请号：US13177146

申请日：2011-07-06

申请人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

发明人： Renata Camillo-Castillo ,  Peter B. Gray ,  David L. Harame ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu

IPC分类号： H01L21/331 ,  H01L29/73

CPC分类号： H01L29/73 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/107 ,  H01L29/66272 ,  H01L29/7322

摘要： Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.

摘要翻译： 用于制造双极结型晶体管的方法，通过该方法制造的双极结型晶体管以及双极结型晶体管的设计结构。 双极结晶体管包括在本征基极上的电介质层和通过电介质层至少部分地与本征基极分离的外部基极。 发射极开口延伸穿过外部基极和电介质层。 电介质层相对于发射器开口横向凹入以限定内部基极和外部基极之间的腔。 空腔填充有将外部基极和内在基极物理连接在一起的半导体层。

公开(公告)号：US20080268604A1

公开(公告)日：2008-10-30

申请号：US12128077

申请日：2008-05-28

申请人： Peter J. Geiss ,  Marwan H. Khater ,  Qizhi Liu ,  Randy W. Mann ,  Robert J. Purtell ,  BethAnn Rainey ,  Jae-Sung Rieh ,  Andreas D. Stricker

发明人： Peter J. Geiss ,  Marwan H. Khater ,  Qizhi Liu ,  Randy W. Mann ,  Robert J. Purtell ,  BethAnn Rainey ,  Jae-Sung Rieh ,  Andreas D. Stricker

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0804 ,  H01L29/456 ,  H01L29/7371

摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

摘要翻译： 提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。 在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。 本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。 凸起的外基极上面的硅化物以自对准的方式延伸到发射极。 发射极通过间隔物与硅化物分离。

公开(公告)号：US07696034B2

公开(公告)日：2010-04-13

申请号：US12128077

申请日：2008-05-28

申请人： Peter J. Geiss ,  Marwan H. Khater ,  Qizhi Liu ,  Randy W. Mann ,  Robert J. Purtell ,  Beth Ann Rainey ,  Jae-Sung Rieh ,  Andreas D. Stricker

发明人： Peter J. Geiss ,  Marwan H. Khater ,  Qizhi Liu ,  Randy W. Mann ,  Robert J. Purtell ,  Beth Ann Rainey ,  Jae-Sung Rieh ,  Andreas D. Stricker

IPC分类号： H01L21/8238

CPC分类号： H01L29/66242 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0804 ,  H01L29/456 ,  H01L29/7371

摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

摘要翻译： 提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。 在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。 本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。 凸起的外基极上面的硅化物以自对准的方式延伸到发射极。 发射极通过间隔物与硅化物分离。