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1.发明授权Highly integrated wafer bonded MEMS devices with release-free membrane manufacture for high density print heads 有权高度集成的晶片粘合MEMS器件，具有无释放膜制造用于高密度打印头公开(公告)号：US08455271B2
公开(公告)日：2013-06-04
申请号：US11693209
申请日：2007-03-29
CPC分类号： B41J2/14314 , B41J2/16 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1639
摘要： A method of fabricating a MEMS inkjet type print head and the resulting device is disclosed. The method includes providing a driver component and separately providing an actuatable membrane component, the actuatable membrane component being formed in the absence of an acid etch removing a sacrificial layer. The separately provided actuatable membrane component is bonded to the driver component and a nozzle plate is attached to the actuatable membrane component subsequent to the bonding. Separately fabricating the components removes the need for hydrofluoric acid etch removal of a sacrificial layer previously required for forming the actuatable membrane with respect to the driver component.
摘要翻译： 公开了制造MEMS喷墨型打印头的方法和所得到的装置。 该方法包括提供驱动器部件并且单独地提供可致动的膜部件，可致动的膜部件在不存在去除牺牲层的酸蚀刻的情况下形成。 单独提供的致动膜部件被结合到驱动器部件，并且在接合之后将喷嘴板附接到可致动膜部件。 单独制造组件不需要先前为相对于驱动器部件形成可致动膜所需的牺牲层的氢氟酸蚀刻去除。
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2.发明申请HIGHLY INTEGRATED WAFER BONDED MEMS DEVICES WITH RELEASE-FREE MEMBRANE MANUFACTURE FOR HIGH DENSITY PRINT HEADS 有权具有高密度打印头的无释放膜制造的高度集成的波形粘结MEMS器件公开(公告)号：US20080238997A1
公开(公告)日：2008-10-02
申请号：US11693209
申请日：2007-03-29
CPC分类号： B41J2/14314 , B41J2/16 , B41J2/1623 , B41J2/1629 , B41J2/1632 , B41J2/1639
摘要： A method of fabricating a MEMS inkjet type print head and the resulting device is disclosed. The method includes providing a driver component and separately providing an actuatable membrane component, the actuatable membrane component being formed in the absence of an acid etch removing a sacrificial layer. The separately provided actuatable membrane component is bonded to the driver component and a nozzle plate is attached to the actuatable membrane component subsequent to the bonding. Separately fabricating the components removes the need for hydrofluoric acid etch removal of a sacrificial layer previously required for forming the actuatable membrane with respect to the driver component.
摘要翻译： 公开了制造MEMS喷墨型打印头的方法和所得到的装置。 该方法包括提供驱动器部件并且单独地提供可致动的膜部件，可致动的膜部件在不存在去除牺牲层的酸蚀刻的情况下形成。 单独提供的致动膜部件被结合到驱动器部件，并且在接合之后将喷嘴板附接到可致动膜部件。 单独制造组件不需要先前为相对于驱动器部件形成可致动膜所需的牺牲层的氢氟酸蚀刻去除。
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公开(公告)号：US06342403B1
公开(公告)日：2002-01-29
申请号：US09736739
申请日：2000-12-14
IPC分类号： H01L2100
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to electrical detection of V-groove width during the fabrication of photosensitive chips, which create electrical signals from an original image, as would be found, for example, in a digital scanner or facsimile machine.
摘要翻译： 本发明一般涉及在制造感光芯片期间的V形槽宽度的电检测，其从原始图像产生电信号，例如在数字扫描仪或传真机中可以找到。
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4.发明授权System for combining data from multiple CPU write requests via buffers and using read-modify-write operation to write the combined data to the memory 失效用于通过缓冲区组合来自多个CPU写请求的数据并使用读 - 修改 - 写操作将组合数据写入存储器的系统
公开(公告)号：US5459842A
公开(公告)日：1995-10-17
申请号：US905259
申请日：1992-06-26
CPC分类号： G06F13/1631
摘要： A write compression buffer is connected to a CPU bus and to a memory controller to provide write cycle compression in which plural partial write requests to the same memory address are compressed into a single memory write cycle. The buffer has a plurality of buffering level.
摘要翻译： 写压缩缓冲器连接到CPU总线和存储器控制器以提供写周期压缩，其中对相同存储器地址的多个部分写请求被压缩为单个存储器写周期。 缓冲器具有多个缓冲级别。
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公开(公告)号：US06558974B2
公开(公告)日：2003-05-06
申请号：US10039741
申请日：2001-10-29
IPC分类号： H01L2100
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to electrical detection of V-groove width during the fabrication of photosensitive chips, which create electrical signals from an original image, as would be found, for example, in a digital scanner or facsimile machine.
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公开(公告)号：US06396297B1
公开(公告)日：2002-05-28
申请号：US09736803
申请日：2000-12-14
IPC分类号： G01R3126
CPC分类号： H01L22/34 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： An apparatus detects the width of a V-groove formed on a semiconductor wafer. A resistor overlaps a chip area and an area upon which the V-groove is to be etched on the wafer. A pad etched on the silicon wafer is coupled to the resistor. A tester supplies voltage to the pad after the V-groove has been etched into the silicon wafer; and a circuit coupled to the pad determines the width of the etched V-groove.
摘要翻译： 一种装置检测形成在半导体晶片上的V形槽的宽度。 一个电阻器重叠在晶片上的芯片区域和要蚀刻V形槽的区域。 在硅晶片上蚀刻的焊盘耦合到电阻器。 在V沟被蚀刻到硅晶片之后，测试仪向焊盘提供电压; 并且耦合到焊盘的电路确定蚀刻的V形槽的宽度。
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