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公开(公告)号：US20120025139A1
公开(公告)日：2012-02-02
申请号：US13187644
申请日：2011-07-21
CPC分类号： C09K11/623 , C09K11/625 , C09K11/642 , H01L31/032
摘要： The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art.The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译： 本申请提供了新型的Zn-（II）-III-N型化合物半导体族的物质组成，其中III表示周期表第III族中的一种或多种元素，（II） 表示周期表第II族中的一个或多个任选的另外的元素。 该族的成员包括例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN，ZnAlInN或ZnAlGaInN。 这种类型的化合物半导体材料在现有技术中不是先前已知的。 可以控制新的Zn-（II）-III-N化合物半导体材料的组成以便调整其带隙和发光性能。 证明了紫外 - 可见红外波长范围内的高效发光。 本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。
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公开(公告)号：US20090179191A1
公开(公告)日：2009-07-16
申请号：US12354317
申请日：2009-01-15
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译： 在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。 在有源区的基板侧设置AlGaN层（6）。 这增加了发光装置的光输出。 这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。
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公开(公告)号：US20130015362A1
公开(公告)日：2013-01-17
申请号：US13180971
申请日：2011-07-12
CPC分类号： C02F1/32 , C02F1/30 , C02F2201/3222 , C02F2201/3226 , C02F2201/326 , G01N15/1434 , G01N15/147 , G01N2015/1438
摘要： A system and method are disclosed for the simultaneous optical disinfection and detection of biological particles in a flowing fluid, such as air or water, medium. A light source for irradiating the flowing medium is a dual wavelength laser element simultaneously emitting a visible laser beam and an ultraviolet laser beam. In particular, a laser diode may generate a first visible laser light beam, and a second ultraviolet laser light beam may be generated by passing the first laser light beam through a frequency doubling crystal. Optical detectors measure scattering, fluorescence and/or transmission of the laser light beams from the air or water medium to determine the presence of biological particles in real-time.
摘要翻译： 公开了用于同时光学消毒和检测流动流体（例如空气或水，介质）中的生物颗粒的系统和方法。 用于照射流动介质的光源是同时发射可见激光束和紫外激光束的双波长激光元件。 特别地，激光二极管可以产生第一可见激光束，并且可以通过使第一激光束通过倍频晶体来产生第二紫外激光束。 光学检测器测量来自空气或水介质的激光束的散射，荧光和/或透射，以实时确定生物颗粒的存在。
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公开(公告)号：US20120068196A1
公开(公告)日：2012-03-22
申请号：US13228648
申请日：2011-09-09
CPC分类号： H01L33/20 , H01L33/0095 , H01S5/0425 , H01S5/2086 , H01S5/32341
摘要： A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity.
摘要翻译： 半导体发光器件包括设置在衬底上的半导体层结构。 层结构包括设置在第一层和第二层之间的有源区。 层结构中存在一个或多个空腔，每个空腔与穿透位错重合，并且从层结构的上表面至少穿过第二层和活性区延伸。 去除穿透位错的材料提供了有效地抑制穿透位错作为非辐射中心的趋势，从而提高了装置的光输出效率。 可以通过在一个或多个穿透错位的位置处选择性地蚀刻层结构以在该位置处或每个位置处形成引导腔的第一步骤来制造该装置。 应用第二蚀刻步骤来增加每个引导腔的深度。
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