公开(公告)号：US06891176B2

公开(公告)日：2005-05-10

申请号：US10601090

申请日：2003-06-20

申请人： Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

发明人： Petr Viscor ,  Michael Jensen ,  Rolf Stribolt Andersen ,  Vladimir Kolarik ,  Armin Delong

IPC分类号： G11B9/10 ,  H01J1/312 ,  H01J7/24 ,  H01J37/06 ,  H01J37/317

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

摘要： Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

摘要翻译： 金属 - 绝缘体 - 金属平面电子发射体（PEES）有潜力用于未来几代半导体器件的先进光刻技术。 然而，PEE的寿命有限，限制了其商业应用。 据信，PEE的有限寿命受到来自阳极的金属离子的扩散的限制。 内扩散可以以多种不同的方式进行反驳。 一种方法是将PEE冷却到低于室温的温度。 这降低了金属离子迁移率，因此金属离子不太可能扩散到绝缘体层中。 另一种方法是偶尔从用于产生电子束的极性反转PEE两端的电位。 这抵消了驱动从PEE阳极到PEE阴极的带正电荷的金属离子的电驱动力。

公开(公告)号：US07399987B1

公开(公告)日：2008-07-15

申请号：US09700463

申请日：1999-06-11

申请人： Petr Viscor ,  Niels Ole Nielsen ,  Armin Delong ,  Vladimir Kolarik

发明人： Petr Viscor ,  Niels Ole Nielsen ,  Armin Delong ,  Vladimir Kolarik

IPC分类号： H01J19/24

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2235/062

摘要： A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (˜1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (˜100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

摘要翻译： 公开了一种基于电子的准弹道输运的存在的平面电子发射体。 在其优选实施例中，平面电子发射器结构由有限间隙纯半导体或绝缘体的主体组成，所述宏观厚度（〜1mm）的主体由两个平行表面和一组两个沉积/生长在 所述两个自由表面使得当由两个电极和夹在其间的所述半导体或绝缘体组成的该结构施加低的外部电场（〜100V / cm）时，注入到所述半导体中的大部分电子 或来自带负电荷的电极（阴极）的绝缘体本质上是准弹道的，也就是说，注入的电子的这一部分在所述半导体或绝缘体内部被加速，而不会受到任何明显的非弹性能量损失，从而实现足够的能量和适当的动量 带正电的电极（阳极）能够穿过所述阳极并从所述结构件逸出 所述半导体或绝缘体包括具有预定晶体取向的材料或材料体系。

公开(公告)号：US5627479A

公开(公告)日：1997-05-06

申请号：US446857

申请日：1995-09-01

申请人： Petr Viscor ,  Jan Vedde

发明人： Petr Viscor ,  Jan Vedde

IPC分类号： G01R31/26 ,  G01R27/26

CPC分类号： G01R31/2648 ,  Y10T29/49004

摘要： The present invention relates to a method for determining characteristic electrical properties of semi-conducting materials wherein the time/frequency dependent electrical impedance or admittance of the material is measured. The invention also relates to an apparatus for carrying out the method. A number of bulb and surface parameters characterize the electrical properties of a given piece of material. These parameters include the dielectric constant .epsilon. of the material, the difference .DELTA..mu..sub.ch in the chemical potential of the bulk of a material and the chemical potential of its surface and/or metal electrode--material surface interface, the density of the majority and minority electrical mobile charge carriers N and N.sub.min, respectively, in the bulk of the material, the electrical mobility .mu. of the majority electrical mobile charges in the bulk of the material and the electrical mobility .mu..sub.min of minority mobile charge carriers, the surface and bulk emission and capture rates E.R. and C.R., respectively, for mobile positive and negative charge carriers characterizing the effect of surface and bulk localized states within the band gap, when they are present, on the electrical transport.

摘要翻译： PCT No.PCT / DK93 / 00410 Sec。 371 1995年9月1日 102（e）1995年9月1日PCT PCT 1993年12月7日PCT公布。 WO94 / 14078 PCT出版物 日期：1994年6月23日本发明涉及一种用于确定半导体材料的特性电性能的方法，其中测量材料的时间/频率相关的电阻抗或导纳。 本发明还涉及一种用于执行该方法的装置。 一些灯泡和表面参数表征给定材料的电性能。 这些参数包括材料的介电常数εε，材料体积的化学势差的差ΔTA和其表面和/或金属电极 - 材料表面界面的化学势，多数和少数的密度 电动移动电荷载体N和Nmin分别在大部分材料中，大部分电动移动电荷的电迁移率在大部分材料和少数移动电荷载体的电迁移率μmin，表面和体积发射 并且对于移动正电荷和负电荷载体，分别捕获速率ER和CR，其表征在电气传输中存在的带隙内的表面和体积局部状态对带隙的影响。