公开(公告)号：US4929884A

公开(公告)日：1990-05-29

申请号：US203407

申请日：1988-06-06

申请人： Philip H. Bird ,  David J. Coe ,  David H. Paxman ,  Aart G. Korteling

发明人： Philip H. Bird ,  David J. Coe ,  David H. Paxman ,  Aart G. Korteling

IPC分类号： G05F1/56 ,  G05F3/24 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78 ,  H03K17/06 ,  H03K17/082 ,  H03K17/567

CPC分类号： H01L27/0922 ,  G05F3/24 ,  H03K17/06 ,  H03K17/0822

摘要： Low voltage semiconductor devices are integrated monolithically with a high voltage semiconductor device on an electrically conductive substrate. The substrate forms an electrode of the high voltage device and is connected in use to the high voltage terminal of a power supply. The low voltage devices operate from a regulated low voltage supply, which is regulated with reference to the high voltage supply voltage, and not with reference to ground. This reduces the need to isolate the low voltage devices from the conductive substrate. An intelligent power switch circuit constructed in accordance with the invention is suitable for use in automotive and lighting applications.

公开(公告)号：US5081379A

公开(公告)日：1992-01-14

申请号：US233969

申请日：1988-08-18

申请人： Aart G. Korteling

发明人： Aart G. Korteling

IPC分类号： H03K17/08 ,  G01R19/145 ,  G01R19/15 ,  G01R19/165 ,  H01L27/04 ,  H01L29/78 ,  H03K17/687

CPC分类号： G01R19/16519 ,  G01R19/15

摘要： A circuit for measuring the current through a power transistor comprising at least two groups of parallel-switched transistors. A first large group of transistors carries the power current and a second group of transistors carries a current to be measured which is proportional to the power current when the base-emitter voltage or the gate-source voltage (in the case of bipolar or field effect transistors) of all the transistors in the groups is the same. The voltage difference between the parallel-switched emitters or sources of the two groups is measured by means of a differential amplifier and the emitter or source voltage of the first group is impressed on the emitters or sources of the second group by means of a control transistor driven by the differential amplifier. Except in extreme cases (for example, a short-circuit) the current to be measured through the second group follows the power current through the first group on a proportional basis.

摘要翻译： 一种用于测量通过包括至少两组并联开关晶体管的功率晶体管的电流的电路。 第一大组晶体管承载功率电流，第二组晶体管承载当基极 - 发射极电压或栅源电压（在双极或场效应的情况下）与功率电流成正比的待测电流 晶体管中的晶体管相同。 通过差分放大器测量两组的并联交换发射器或源极之间的电压差，并且通过控制晶体管将第一组的发射极或源极电压施加到第二组的发射极或源极上 由差分放大器驱动。 除了在极端情况下（例如短路），通过第二组测量的电流按比例的方式跟随第一组的功率电流。

公开(公告)号：US5563760A

公开(公告)日：1996-10-08

申请号：US760560

申请日：1991-09-16

申请人： Royce Lowis ,  Edward S. Eilley ,  Paul T. Moody ,  Aart G. Korteling ,  Brendan P. Kelley

发明人： Royce Lowis ,  Edward S. Eilley ,  Paul T. Moody ,  Aart G. Korteling ,  Brendan P. Kelley

IPC分类号： G01K7/01 ,  G01K3/10 ,  G01K3/14 ,  H01L29/78 ,  H03K17/08 ,  H03K17/14 ,  H02H5/04

CPC分类号： H01L29/7802 ,  G01K3/14 ,  G01K7/01 ,  H01L29/41766 ,  H01L2924/0002 ,  Y10S323/907

摘要： A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P.sub.1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P.sub.2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.

摘要翻译： 一种用于感测有源半导体器件（例如半导体本体（10）的功率MOSFET（11））的温度的温度检测电路（100）。 该电路具有在与有源半导体器件（11）的周边（12）相邻的第一位置（P1）处设置在半导体本体上的第一温度感测器件（R1R2），设置在有源半导体器件 所述半导体本体在比所述第一位置更远离所述有源半导体器件的周边的第二位置（P2）处。 当第一和第二感测装置感测到的温度差达到预定值时，例如响应于第一和第二温度感测装置的比较器的装置提供控制信号以切断有源半导体器件（11）。