公开(公告)号：US20170243740A1

公开(公告)日：2017-08-24

申请号：US15511911

申请日：2015-09-25

申请人： Philipps-Universität Marburg

发明人： Carsten VON HAENISCH ,  Kerstin VOLZ ,  Wolfgang STOLZ ,  Eduard STERZER ,  Andreas BEYER ,  Dominik KEIPER ,  Benjamin RINGLER

IPC分类号： H01L21/02 ,  C07F9/50 ,  C07F9/90 ,  C23C16/22 ,  C07F9/72

CPC分类号： H01L21/02538 ,  C07F9/46 ,  C07F9/504 ,  C07F9/72 ,  C07F9/90 ,  C23C16/22 ,  C23C16/301 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262

摘要： The invention provides the use of at least one binary group 15 element compound of the general formula R1R2E-E′R3R4 (I) or R5E(E′R6R7)2 (II) as the educt in a vapor deposition process. In this case, R1, R2, R3 and R4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.