摘要:
Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material. The invention relates to a deflection ring of sintered MgZn-ferrite material. In accordance with the invention, this deflection ring is characterized in that the majority of the grains of the sintered material have a monodomain structure. By virtue thereof, a relatively small heat dissipation occurs in the ring when it is used in a cathode ray tube. The average grain size of the sintered MgZn-ferrite material is preferably 2.8 micrometers or less. MgZn-ferrite materials whose composition corresponds to the formula Mg.sub.1-z Zn.sub.z Fe.sub.2-y O.sub.4, wherein 0.1
摘要:
The invention relates to a deflection ring of sintered MgZn-ferrite material. In accordance with the invention, this deflection ring is characterized in that the majority of the grains of the sintered material have a monodomain structure. By virtue thereof, a relatively small heat dissipation occurs in the ring when it is used in a cathode ray tube. The average grain size of the sintered MgZn-ferrite material is preferably 2.8 micrometers or less. MgZn-ferrite materials whose composition corresponds to the formula Mg.sub.1-z Zn.sub.z Fe.sub.2-y O.sub.4, wherein 0.1
摘要:
The invention describes a transformer core of NiZn ferrite material. Said transformer core exhibits low overall losses when it is used in a transformer. Said low losses are attained if the majority of the grains of the sintered ferrite material have a monodomain structure. This is the case if the average grain size is smaller than 2.8 microns. The average grain size of the sintered material preferably ranges of from 1.3 to 2.6 microns. The .delta.-value is preferably less than 4 nm.
摘要:
An illumination unit including an electrodeless low-pressure discharge lamp (20) and a supply device (50). The lamp has a discharge vessel (30) which encloses in a gastight manner a discharge space (31) which is provided with an ionizable filling. The lamp (20) further has a coil (40) provided with a winding (42) around a sintered core (41) of polycrystalline ferrite material, which winding (42) is connected to the supply device (50). The coil (40) is capable of inducing a high-frequency magnetic field which maintains a discharge in the discharge space (31). The losses in the core (41), when measured at room temperature in a magnetic field with a frequency of 3 MHz and a magnetic flux density of 10 mT, amount to at most 150 mW/cm.sup.3. This has the advantage that the lamp (20) ignites comparatively quickly and loads the supply device (50) comparatively weakly during ignition. The supply device (50) as a result can have a comparatively long useful life.
摘要翻译:一种包括无电极低压放电灯(20)和供电装置(50)的照明单元。 该灯具有放气容器(30),其以气密方式包围设置有可电离填充物的放电空间(31)。 灯(20)还具有在多晶铁氧体材料的烧结芯(41)周围设置有绕组(42)的线圈(40),该绕组(42)与供电装置(50)连接。 线圈(40)能够引起在放电空间(31)中保持放电的高频磁场。 在室温下,在频率为3MHz,磁通密度为10mT的磁场中测量时,芯(41)的损耗为至多150mW / cm 3。 这具有以下优点:灯(20)在点火期间相对较快地点燃并且相对较弱地加载供应装置(50)。 因此,供给装置(50)的使用寿命比较长。
摘要:
The invention relates to a sintered moulding of Li(Ni)Zn ferrite material, a transformer core and an inductor core of this material as well as several applications of these cores. In accordance with the invention, the majority of the grains of the sintered material have a monodomain structure. This leads to a substantial reduction of the loss factor and the overall losses when these mouldings are subjected to high-frequency applications and power applications. The ferrite material preferably comprises 59-65 mol % Fe.sub.2 O.sub.3, 7-11 mol % Li.sub.2 CO.sub.3, 4-8 mol % MnO and 20-28 mol % ZnO. This also provides the material with a high saturation magnetization.
摘要翻译:本发明涉及这种材料的Li(Ni)Zn铁氧体材料,变压器芯和电感器芯的烧结成型,以及这些芯的几种应用。 根据本发明,烧结材料的大部分晶粒具有单畴结构。 当这些模制品经受高频应用和电力应用时,这导致损耗因子和总体损耗的显着降低。 铁氧体材料优选包含59-65mol%Fe 2 O 3,7-11mol%Li 2 CO 3,4-8mol%MnO和20-28mol%ZnO。 这也为材料提供了高饱和磁化强度。
摘要:
Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).
摘要:
Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.
摘要:
A method of forming an active plate for a liquid crystal display is disclosed in which the source and drain conductors (28, 30), pixel electrodes (38) and column conductors (32) are formed by depositing and patterning a transparent conductor layer. There is selective plating of areas (52; 60) of the transparent conductor layer to form a metallic layer for reducing the resistivity of the transparent conductor layer. The plated areas include the column conductors (32) but exclude the source and drain conductors and the pixel electrodes. This enables the column conductors to be treated to reduce the resistivity, but without altering the channel length of the transistor because the source and drain parts of the layer are shielded from the plating process.
摘要:
Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.
摘要:
A magnetic field sensor comprises a transducer element, which: transducer element is a Spin Tunnel Junction, comprising a first and second magnetic layer which are sandwiched about an interposed electrical insulator layer; the sensor comprises a yoke having two arms; and the first magnetic layer is in direct contact with a first portion of a first arm of the yoke.