Deflection ring of sintered MgZn-ferrite material, cathode ray tube
comprising such a ring and moulding made from this material
    1.
    发明授权
    Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material 失效
    烧结MgZn-铁氧体材料的偏转环,包含这种环的阴极射线管和由该材料制成的模制品

    公开(公告)号:US5841225A

    公开(公告)日:1998-11-24

    申请号:US553229

    申请日:1995-11-07

    摘要: Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material. The invention relates to a deflection ring of sintered MgZn-ferrite material. In accordance with the invention, this deflection ring is characterized in that the majority of the grains of the sintered material have a monodomain structure. By virtue thereof, a relatively small heat dissipation occurs in the ring when it is used in a cathode ray tube. The average grain size of the sintered MgZn-ferrite material is preferably 2.8 micrometers or less. MgZn-ferrite materials whose composition corresponds to the formula Mg.sub.1-z Zn.sub.z Fe.sub.2-y O.sub.4, wherein 0.1

    摘要翻译: 烧结MgZn-铁氧体材料的偏转环,包含这种环的阴极射线管和由该材料制成的模制品。 本发明涉及烧结MgZn-铁氧体材料的偏转环。 根据本发明,该偏转环的特征在于,烧结材料的大部分晶粒具有单畴结构。 因此,当在阴极射线管中使用时,在环中发生相对较小的散热。 烧结的MgZn铁氧体材料的平均粒径优选为2.8微米以下。 其组成对应于式Mg1-zZnzFe2-yO4的MgZn-铁氧体材料,其中0.1

    Sintered transformer or inductor core of nizn ferrite material
    3.
    发明授权
    Sintered transformer or inductor core of nizn ferrite material 失效
    铁素体烧结变压器或电感芯

    公开(公告)号:US5871662A

    公开(公告)日:1999-02-16

    申请号:US978963

    申请日:1997-11-26

    IPC分类号: H01F1/34 H01F27/255 C04B35/30

    CPC分类号: H01F27/255 H01F1/344

    摘要: The invention describes a transformer core of NiZn ferrite material. Said transformer core exhibits low overall losses when it is used in a transformer. Said low losses are attained if the majority of the grains of the sintered ferrite material have a monodomain structure. This is the case if the average grain size is smaller than 2.8 microns. The average grain size of the sintered material preferably ranges of from 1.3 to 2.6 microns. The .delta.-value is preferably less than 4 nm.

    摘要翻译: 本发明描述了NiZn铁氧体材料的变压器芯。 所述变压器铁芯在变压器中使用时总体损耗较小。 如果烧结铁氧体材料的大部分晶粒具有单畴结构,则可获得所述低损耗。 如果平均晶粒尺寸小于2.8微米,则是这种情况。 烧结材料的平均晶粒尺寸优选为1.3至2.6微米。 Δ值优选小于4nm。

    Illumination unit, electrodeless low-pressure discharge lamp, and coil
suitable for use therein
    4.
    发明授权
    Illumination unit, electrodeless low-pressure discharge lamp, and coil suitable for use therein 失效
    照明单元,无电极低压放电灯和适用于其中的线圈

    公开(公告)号:US6057649A

    公开(公告)日:2000-05-02

    申请号:US239010

    申请日:1994-05-05

    摘要: An illumination unit including an electrodeless low-pressure discharge lamp (20) and a supply device (50). The lamp has a discharge vessel (30) which encloses in a gastight manner a discharge space (31) which is provided with an ionizable filling. The lamp (20) further has a coil (40) provided with a winding (42) around a sintered core (41) of polycrystalline ferrite material, which winding (42) is connected to the supply device (50). The coil (40) is capable of inducing a high-frequency magnetic field which maintains a discharge in the discharge space (31). The losses in the core (41), when measured at room temperature in a magnetic field with a frequency of 3 MHz and a magnetic flux density of 10 mT, amount to at most 150 mW/cm.sup.3. This has the advantage that the lamp (20) ignites comparatively quickly and loads the supply device (50) comparatively weakly during ignition. The supply device (50) as a result can have a comparatively long useful life.

    摘要翻译: 一种包括无电极低压放电灯(20)和供电装置(50)的照明单元。 该灯具有放气容器(30),其以气密方式包围设置有可电离填充物的放电空间(31)。 灯(20)还具有在多晶铁氧体材料的烧结芯(41)周围设置有绕组(42)的线圈(40),该绕组(42)与供电装置(50)连接。 线圈(40)能够引起在放电空间(31)中保持放电的高频磁场。 在室温下,在频率为3MHz,磁通密度为10mT的磁场中测量时,芯(41)的损耗为至多150mW / cm 3。 这具有以下优点:灯(20)在点火期间相对较快地点燃并且相对较弱地加载供应装置(50)。 因此,供给装置(50)的使用寿命比较长。

    Sintered moulding, transformer core and inductor core of Li(Ni)Zn
ferrite material, as well as applications thereof
    5.
    发明授权
    Sintered moulding, transformer core and inductor core of Li(Ni)Zn ferrite material, as well as applications thereof 失效
    Li(Ni)Zn铁氧体材料的烧结成型,变压器芯和电感芯,以及其应用

    公开(公告)号:US6002211A

    公开(公告)日:1999-12-14

    申请号:US528385

    申请日:1995-09-13

    摘要: The invention relates to a sintered moulding of Li(Ni)Zn ferrite material, a transformer core and an inductor core of this material as well as several applications of these cores. In accordance with the invention, the majority of the grains of the sintered material have a monodomain structure. This leads to a substantial reduction of the loss factor and the overall losses when these mouldings are subjected to high-frequency applications and power applications. The ferrite material preferably comprises 59-65 mol % Fe.sub.2 O.sub.3, 7-11 mol % Li.sub.2 CO.sub.3, 4-8 mol % MnO and 20-28 mol % ZnO. This also provides the material with a high saturation magnetization.

    摘要翻译: 本发明涉及这种材料的Li(Ni)Zn铁氧体材料,变压器芯和电感器芯的烧结成型,以及这些芯的几种应用。 根据本发明,烧结材料的大部分晶粒具有单畴结构。 当这些模制品经受高频应用和电力应用时,这导致损耗因子和总体损耗的显着降低。 铁氧体材料优选包含59-65mol%Fe 2 O 3,7-11mol%Li 2 CO 3,4-8mol%MnO和20-28mol%ZnO。 这也为材料提供了高饱和磁化强度。

    MRAM in-pixel memory for display devices
    6.
    发明授权
    MRAM in-pixel memory for display devices 失效
    用于显示设备的MRAM像素内存

    公开(公告)号:US07098493B2

    公开(公告)日:2006-08-29

    申请号:US10517460

    申请日:2003-06-04

    IPC分类号: H01L29/76

    摘要: Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).

    摘要翻译: 磁阻随机存取存储器(MRAM)用于为显示设备提供像素内存电路。 存储器电路(25)包括用于存储驱动设置的存储器元件和用于读出所存储的驱动设置的例如触发器电路(64)的读出电路。 存储器元件包括两个MRAM(60,62),每个MRAM耦合到触发器电路(64)的相应输入端。 驱动电路(26)耦合到读出电路和用于驱动像素显示电极(27)的像素显示电极(27),该像素显示电极(27)取决于不通过MRAM的驱动电流的读出驱动设置( 60,62)。 提供一种显示装置(1),其包括多个像素(20),每个像素(20)与一个这样的存储电路(25)和驱动电路(26)相关联。

    Thin-film magnetic head and method of manufacturing the magnetic head
    7.
    发明授权
    Thin-film magnetic head and method of manufacturing the magnetic head 失效
    薄膜磁头及制造磁头的方法

    公开(公告)号:US06205007B1

    公开(公告)日:2001-03-20

    申请号:US08156146

    申请日:1993-11-22

    IPC分类号: G11B5127

    CPC分类号: G11B5/3919 G11B5/3922

    摘要: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

    摘要翻译: 具有头表面(103)并且包括横向于头部表面定向的磁阻元件(109)的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件(107)。 与磁头表面平行延伸的磁阻元件的周边区域(109a)与磁通元件相对地形成,用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面(111),而导磁元件的导磁材料是电绝缘的。

    Pixellated devices such as active matrix liquid crystal displays
    8.
    发明授权
    Pixellated devices such as active matrix liquid crystal displays 失效
    像素化器件如有源矩阵液晶显示器

    公开(公告)号:US06822702B2

    公开(公告)日:2004-11-23

    申请号:US09998032

    申请日:2001-11-29

    IPC分类号: G02F1136

    摘要: A method of forming an active plate for a liquid crystal display is disclosed in which the source and drain conductors (28, 30), pixel electrodes (38) and column conductors (32) are formed by depositing and patterning a transparent conductor layer. There is selective plating of areas (52; 60) of the transparent conductor layer to form a metallic layer for reducing the resistivity of the transparent conductor layer. The plated areas include the column conductors (32) but exclude the source and drain conductors and the pixel electrodes. This enables the column conductors to be treated to reduce the resistivity, but without altering the channel length of the transistor because the source and drain parts of the layer are shielded from the plating process.

    摘要翻译: 公开了一种形成液晶显示器的有源板的方法,其中通过沉积和图案化透明导体层来形成源极和漏极导体(28,30),像素电极(38)和列导体(32)。 对透明导体层的区域(52; 60)进行选择性电镀以形成用于降低透明导体层电阻率的金属层。 电镀区域包括列导体(32),但不包括源极和漏极导体以及像素电极。 这使得列导体能够被处理以降低电阻率,但是不改变晶体管的沟道长度,因为该层的源极和漏极部分被屏蔽而不受电镀过程的影响。

    Method of manufacturing a magnetic head
    9.
    发明授权
    Method of manufacturing a magnetic head 失效
    制造磁头的方法

    公开(公告)号:US06238731B1

    公开(公告)日:2001-05-29

    申请号:US09390854

    申请日:1999-09-07

    IPC分类号: B05D512

    CPC分类号: G11B5/3919 G11B5/3922

    摘要: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

    摘要翻译: 具有头表面(103)并且包括横向于头部表面定向的磁阻元件(109)的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件(107)。 与磁头表面平行延伸的磁阻元件的周边区域(109a)与磁通元件相对地形成,用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面(111),而导磁元件的导磁材料是电绝缘的。