Method of manufacturing a magnetic head
    1.
    发明授权
    Method of manufacturing a magnetic head 失效
    制造磁头的方法

    公开(公告)号:US06238731B1

    公开(公告)日:2001-05-29

    申请号:US09390854

    申请日:1999-09-07

    IPC分类号: B05D512

    CPC分类号: G11B5/3919 G11B5/3922

    摘要: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

    摘要翻译: 具有头表面(103)并且包括横向于头部表面定向的磁阻元件(109)的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件(107)。 与磁头表面平行延伸的磁阻元件的周边区域(109a)与磁通元件相对地形成,用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面(111),而导磁元件的导磁材料是电绝缘的。

    Thin-film magnetic head and method of manufacturing the magnetic head
    2.
    发明授权
    Thin-film magnetic head and method of manufacturing the magnetic head 失效
    薄膜磁头及制造磁头的方法

    公开(公告)号:US06205007B1

    公开(公告)日:2001-03-20

    申请号:US08156146

    申请日:1993-11-22

    IPC分类号: G11B5127

    CPC分类号: G11B5/3919 G11B5/3922

    摘要: Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.

    摘要翻译: 具有头表面(103)并且包括横向于头部表面定向的磁阻元件(109)的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件(107)。 与磁头表面平行延伸的磁阻元件的周边区域(109a)与磁通元件相对地形成,用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面(111),而导磁元件的导磁材料是电绝缘的。

    Planar magnetic device without center core leg
    5.
    发明授权
    Planar magnetic device without center core leg 失效
    无中心芯腿的平面磁性装置

    公开(公告)号:US06417753B1

    公开(公告)日:2002-07-09

    申请号:US09506544

    申请日:2000-02-17

    IPC分类号: H01F1706

    CPC分类号: H01F27/346

    摘要: A planar magnetic device with vertically oriented coil windings having a cross-section of a core with a torroidally-shaped winding structure taken transverse to the plane of the winding structure having two adjacent “winding windows” where the coils are present. One or more gaps in the core materials surrounding the windings store most of the energy generated by the inductor. The gap of height of at least one half the height of the winding structure is confined to the area between the winding cross-sections. Furthermore, in another aspect of the invention the gap is filled with a multi-layer structure of an alternating mono-layer of equally sized ferrite particles and a layer of synthetic resin.

    摘要翻译: 具有垂直取向的线圈绕组的平面磁性装置,其具有横截于所述绕组结构的平面的具有环形缠绕结构的芯的横截面,所述绕组结构的平面具有两个相邻的线圈的“绕组窗”。 围绕绕组的芯材料中的一个或多个间隙存储由电感器产生的大部分能量。 绕组结构的高度的至少一半的高度间隙限制在绕组横截面之间的面积。 此外,在本发明的另一方面,间隙填充有均匀尺寸的铁氧体颗粒和合成树脂层的交替单层的多层结构。

    MRAM in-pixel memory for display devices
    6.
    发明授权
    MRAM in-pixel memory for display devices 失效
    用于显示设备的MRAM像素内存

    公开(公告)号:US07098493B2

    公开(公告)日:2006-08-29

    申请号:US10517460

    申请日:2003-06-04

    IPC分类号: H01L29/76

    摘要: Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises memory elements, for storing a drive setting, and a read-out circuit, for example a flip-flop circuit (64), for reading-out the stored drive setting. The memory elements comprise two MRAMs (60, 62), each coupled to a respective input of the flip-flop circuit (64). A drive circuit (26) is coupled to the read-out circuit and a pixel display electrode (27) for driving the pixel display electrode (27) dependent upon the read-out drive setting with drive current that does not pass through the MRAMs (60, 62). A display device (1) is provided comprising a plurality of pixels (20) each associated with one such memory circuit (25) and drive circuit (26).

    摘要翻译: 磁阻随机存取存储器(MRAM)用于为显示设备提供像素内存电路。 存储器电路(25)包括用于存储驱动设置的存储器元件和用于读出所存储的驱动设置的例如触发器电路(64)的读出电路。 存储器元件包括两个MRAM(60,62),每个MRAM耦合到触发器电路(64)的相应输入端。 驱动电路(26)耦合到读出电路和用于驱动像素显示电极(27)的像素显示电极(27),该像素显示电极(27)取决于不通过MRAM的驱动电流的读出驱动设置( 60,62)。 提供一种显示装置(1),其包括多个像素(20),每个像素(20)与一个这样的存储电路(25)和驱动电路(26)相关联。

    Pixellated devices such as active matrix liquid crystal displays
    7.
    发明授权
    Pixellated devices such as active matrix liquid crystal displays 失效
    像素化器件如有源矩阵液晶显示器

    公开(公告)号:US06822702B2

    公开(公告)日:2004-11-23

    申请号:US09998032

    申请日:2001-11-29

    IPC分类号: G02F1136

    摘要: A method of forming an active plate for a liquid crystal display is disclosed in which the source and drain conductors (28, 30), pixel electrodes (38) and column conductors (32) are formed by depositing and patterning a transparent conductor layer. There is selective plating of areas (52; 60) of the transparent conductor layer to form a metallic layer for reducing the resistivity of the transparent conductor layer. The plated areas include the column conductors (32) but exclude the source and drain conductors and the pixel electrodes. This enables the column conductors to be treated to reduce the resistivity, but without altering the channel length of the transistor because the source and drain parts of the layer are shielded from the plating process.

    摘要翻译: 公开了一种形成液晶显示器的有源板的方法,其中通过沉积和图案化透明导体层来形成源极和漏极导体(28,30),像素电极(38)和列导体(32)。 对透明导体层的区域(52; 60)进行选择性电镀以形成用于降低透明导体层电阻率的金属层。 电镀区域包括列导体(32),但不包括源极和漏极导体以及像素电极。 这使得列导体能够被处理以降低电阻率,但是不改变晶体管的沟道长度,因为该层的源极和漏极部分被屏蔽而不受电镀过程的影响。

    Sintered transformer or inductor core of nizn ferrite material
    8.
    发明授权
    Sintered transformer or inductor core of nizn ferrite material 失效
    铁素体烧结变压器或电感芯

    公开(公告)号:US5871662A

    公开(公告)日:1999-02-16

    申请号:US978963

    申请日:1997-11-26

    IPC分类号: H01F1/34 H01F27/255 C04B35/30

    CPC分类号: H01F27/255 H01F1/344

    摘要: The invention describes a transformer core of NiZn ferrite material. Said transformer core exhibits low overall losses when it is used in a transformer. Said low losses are attained if the majority of the grains of the sintered ferrite material have a monodomain structure. This is the case if the average grain size is smaller than 2.8 microns. The average grain size of the sintered material preferably ranges of from 1.3 to 2.6 microns. The .delta.-value is preferably less than 4 nm.

    摘要翻译: 本发明描述了NiZn铁氧体材料的变压器芯。 所述变压器铁芯在变压器中使用时总体损耗较小。 如果烧结铁氧体材料的大部分晶粒具有单畴结构,则可获得所述低损耗。 如果平均晶粒尺寸小于2.8微米,则是这种情况。 烧结材料的平均晶粒尺寸优选为1.3至2.6微米。 Δ值优选小于4nm。

    Deflection ring of sintered MgZn-ferrite material, cathode ray tube
comprising such a ring and moulding made from this material
    10.
    发明授权
    Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material 失效
    烧结MgZn-铁氧体材料的偏转环,包含这种环的阴极射线管和由该材料制成的模制品

    公开(公告)号:US5841225A

    公开(公告)日:1998-11-24

    申请号:US553229

    申请日:1995-11-07

    摘要: Deflection ring of sintered MgZn-ferrite material, cathode ray tube comprising such a ring and moulding made from this material. The invention relates to a deflection ring of sintered MgZn-ferrite material. In accordance with the invention, this deflection ring is characterized in that the majority of the grains of the sintered material have a monodomain structure. By virtue thereof, a relatively small heat dissipation occurs in the ring when it is used in a cathode ray tube. The average grain size of the sintered MgZn-ferrite material is preferably 2.8 micrometers or less. MgZn-ferrite materials whose composition corresponds to the formula Mg.sub.1-z Zn.sub.z Fe.sub.2-y O.sub.4, wherein 0.1

    摘要翻译: 烧结MgZn-铁氧体材料的偏转环,包含这种环的阴极射线管和由该材料制成的模制品。 本发明涉及烧结MgZn-铁氧体材料的偏转环。 根据本发明,该偏转环的特征在于,烧结材料的大部分晶粒具有单畴结构。 因此,当在阴极射线管中使用时,在环中发生相对较小的散热。 烧结的MgZn铁氧体材料的平均粒径优选为2.8微米以下。 其组成对应于式Mg1-zZnzFe2-yO4的MgZn-铁氧体材料,其中0.1