摘要:
A method of decoding data of a non-volatile memory device is provided. The method includes a first decoding operation of reading first hard decision data from the non-volatile memory device using a first hard decision read level and performing decoding using the first hard decision data; a second decoding operation of reading first soft decision data from the non-volatile memory device when the decoding fails in the first decoding operation, and performing decoding using the first soft decision; and a third decoding operation of changing from the first hard decision read level to a second hard decision read level when the decoding fails in the second decoding operation, reading second hard decision data using the second hard decision read level, and performing decoding either using the second hard decision data or using both the second hard decision data and the first soft decision data.
摘要:
A method of operating a data compression device includes analyzing data using an analyzer and generating a result of the analysis, while the data is buffered by an input buffer, and selectively compressing the buffered data according to the result of the analysis. A data compression device includes a data pattern analyzer configured to analyze data transmitted to an input buffer, and generate an analysis code based on the analysis of the data; and a data compression manager configured to selectively compress the data in the input buffer based on the analysis code.
摘要:
A method of storing data in a storage medium of a data storage device comprises storing input data in the storage medium, and reading the input data from the storage medium and compressing the read data during a background operation of the data storage device.
摘要:
A method of programming a nonvolatile memory device comprises programming memory cells connected to a first wordline, programming memory cells connected to a second wordline, programming memory cells connected to a third line between the first wordline and the second wordline, and adjusting a threshold voltage of the memory cells connected to the first wordline to compensate for interference generated by the programming of the memory cells connected to the third wordline.
摘要:
Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates.
摘要:
A memory device including a randomizer and a memory system including the memory device are provided. The memory device includes: a randomizer including a sequence generator which generates a first sequence from a seed and a converter which converts the first sequence into a second sequence in response to a conversion factor, the randomizer randomizing data to be programmed using the second sequence and outputting the randomized data; and a storage area which receives the randomized data from the randomizer and storing the randomized data.
摘要:
A method of modifying data sequences in a memory system comprises receiving program data having a first data sequence, and determining whether the received first data sequence matches one of “m” predefined sequences stored in the memory system. The method further comprises replacing the received first data sequence with a replacement sequence upon determining that the received first data sequence matches one of the “m” predefined sequences, and outputting the replacement sequence from the memory system. The replacement sequence typically comprises pattern bits indicating a pattern of the first data sequence and location bits indicating a start location of the first data sequence.
摘要:
A data storage device receives write data and includes a controller configured to determine a characteristic of the write data and provide a first control signal in response to the determined characteristic, a randomizer configured to selectively randomize or not randomize the write data in response to the first control signal to thereby generate randomized write data, and a data storage unit configured to store the randomized write data.
摘要:
A memory system includes: a memory controller including an error correction decoder. The error correction decoder includes: a demultiplexer adapted to receive data and demultiplex the data into a first set of data and a second set of data; first and second buffer memories for storing the first and second sets of data, respectively; an error detector; an error corrector; and a multiplexer adapted to multiplex the first set of data and the second set of data and to provide the multiplexed data to the error corrector. While the error corrector corrects errors in the first set of data, the error detector detects errors in the second set of data stored in the second buffer memory.
摘要:
A semiconductor memory system and a programming method performed by the same. The semiconductor memory system includes: a semiconductor memory device having a storage area; a memory controller for controlling programming and reading of the storage area of the semiconductor memory device; at least one first randomizer for changing program data to be programmed into the storage area to first random data by using a first sequence in a first period; and at least one second randomizer for changing the first random data to second random data by using a second sequence in a second period that is different from the first period.