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公开(公告)号：US07408748B2
公开(公告)日：2008-08-05
申请号：US11716869
申请日：2007-03-12
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability and can cause amplitude loss and side reading. This problem has been overcome by placing an additional layer of soft magnetic material on the conductive layer. The added layer prevents flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to nearby magnetic layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，并可能导致振幅损失和侧面读数。 通过在导电层上放置附加的软磁性材料层已经克服了这个问题。 添加的层防止漏电流到间隙区域。 必须包括非磁性层以防止交换耦合到附近的磁性层。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。
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2.发明授权公开(公告)号：US06760966B2
公开(公告)日：2004-07-13
申请号：US10135097
申请日：2002-04-30
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome in a process of manufacturing a device by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.
摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 在通过在硬偏压层上方添加附加的软磁性材料层来制造器件的过程已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。
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公开(公告)号：US07599158B2
公开(公告)日：2009-10-06
申请号：US11716945
申请日：2007-03-12
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。
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公开(公告)号：US07203039B2
公开(公告)日：2007-04-10
申请号：US10856181
申请日：2004-05-28
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.
摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。
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公开(公告)号：US20070171571A1
公开(公告)日：2007-07-26
申请号：US11716869
申请日：2007-03-12
申请人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
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公开(公告)号：US20070171572A1
公开(公告)日：2007-07-26
申请号：US11716945
申请日：2007-03-12
申请人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Wang , Moris Dovek , Jibin Geng , Tai Min
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this. A process for manufacturing the device is also described.
摘要翻译： 随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。 较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。 通过在硬偏压层上方添加一层附加的软磁材料已经克服了这个问题。 添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。 必须包括非磁性层以防止与硬偏置层的交换耦合。 在至少一个实施例中，导电引线用于实现这一点。 还描述了用于制造该装置的方法。
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公开(公告)号：US20050007706A1
公开(公告)日：2005-01-13
申请号：US10915272
申请日：2004-08-10
申请人： Moris Dovek , Tai Min
发明人： Moris Dovek , Tai Min
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3903 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49055
摘要： In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by inserting an additional antiferromagnetic layer between the hard bias plugs and the overlaid leads. This additional antiferromagnetic layer and the lead layer are etched in the same operation to define the read gap, eliminating the possibility of misalignment between them. The extra antiferromagnetic layer is also longitudinally biased so there is no falloff in bias strength before the edge of the gap is reached. A process for manufacturing the device is also described.
摘要翻译： 在引线覆盖型的底部自旋阀中，稳定器件的纵向偏置场在达到间隙之前倾向于很好地脱落。 通过在硬偏置插头和重叠引线之间插入附加的反铁磁层已经克服了这个问题。 在相同的操作中蚀刻该额外的反铁磁层和引线层以限定读取间隙，从而消除它们之间的未对准的可能性。 额外的反铁磁层也是纵向偏置的，所以在达到间隙的边缘之前，偏压强度没有衰减。 还描述了用于制造该装置的方法。
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公开(公告)号：US08422287B2
公开(公告)日：2013-04-16
申请号：US12807611
申请日：2010-09-09
申请人： Tai Min , Qiang Chen , Po Kang Wang
发明人： Tai Min , Qiang Chen , Po Kang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
摘要翻译： MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。 因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。 在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。
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9.发明授权公开(公告)号：US07994596B2
公开(公告)日：2011-08-09
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译： 提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由 与在自由层上形成的薄的反铁磁层的磁耦合。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。
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公开(公告)号：US20080253178A1
公开(公告)日：2008-10-16
申请号：US11787330
申请日：2007-04-16
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
CPC分类号： G11C11/16
摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
摘要翻译： 描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。 该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。
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