公开(公告)号：US07859807B2

公开(公告)日：2010-12-28

申请号：US12104019

申请日：2008-04-16

申请人： Po-Chih Wang ,  Ka-Un Chan

发明人： Po-Chih Wang ,  Ka-Un Chan

IPC分类号： H02H9/00

CPC分类号： H01L27/0255

摘要： An electrostatic discharge (ESD) protection circuit and method thereof is provided. The ESD protection circuit includes two clamping circuits, an inductor, a diode and a diode string. In addition to a voltage swing of an output voltage able to get rid of the influence of the ESD protection circuit, the invention reduces an ESD conduction path length and dissipates an ESD current swiftly by installing at least two clamping circuits, which significantly increases the effectiveness of the protection for large-signal circuits.

摘要翻译： 提供一种静电放电（ESD）保护电路及其方法。 ESD保护电路包括两个钳位电路，一个电感器，二极管和二极管串。 除了能够消除ESD保护电路的影响的输出电压的电压摆幅之外，本发明通过安装至少两个钳位电路来降低ESD导电路径长度并迅速消散ESD电流，这显着增加了有效性 的大信号电路的保护。

公开(公告)号：US20080232010A1

公开(公告)日：2008-09-25

申请号：US12104019

申请日：2008-04-16

申请人： Po-Chih Wang ,  Ka-Un Chan

发明人： Po-Chih Wang ,  Ka-Un Chan

IPC分类号： H02H9/04

CPC分类号： H01L27/0255

摘要： An electrostatic discharge (ESD) protection circuit and method thereof is provided. The ESD protection circuit includes two clamping circuits, an inductor, a diode and a diode string. In addition to a voltage swing of an output voltage able to get rid of the influence of the ESD protection circuit, the invention reduces an ESD conduction path length and dissipates an ESD current swiftly by installing at least two clamping circuits, which significantly increases the effectiveness of the protection for large-signal circuits.

摘要翻译： 提供一种静电放电（ESD）保护电路及其方法。 ESD保护电路包括两个钳位电路，一个电感器，二极管和二极管串。 除了能够消除ESD保护电路的影响的输出电压的电压摆幅之外，本发明通过安装至少两个钳位电路来降低ESD导电路径长度并迅速消散ESD电流，这显着增加了有效性 的大信号电路的保护。

公开(公告)号：US08519797B2

公开(公告)日：2013-08-27

申请号：US13226467

申请日：2011-09-06

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F3/04

CPC分类号： H03F1/223 ,  H03F1/0266 ,  H03F2200/102 ,  H03F2200/18

摘要： A power amplifier includes a first transistor, a second transistor and a bias voltage generator. The first transistor includes a gate electrode, a first electrode and a second electrode, where the gate electrode is coupled to a signal input terminal of the power amplifier. The second transistor includes a gate electrode, first electrode and a second electrode, where the second electrode of the second transistor is connected to the first electrode of the first transistor, and the first electrode of the second transistor is coupled to a signal output terminal of the power amplifier. The bias voltage generator is coupled to the second transistor, and is utilized for generating a bias voltage to bias the electrode of the second transistor, where the bias voltage is less than a supply voltage of the power amplifier.

摘要翻译： 功率放大器包括第一晶体管，第二晶体管和偏置电压发生器。 第一晶体管包括栅电极，第一电极和第二电极，其中栅电极耦合到功率放大器的信号输入端。 第二晶体管包括栅电极，第一电极和第二电极，其中第二晶体管的第二电极连接到第一晶体管的第一电极，第二晶体管的第一电极耦合到第一晶体管的信号输出端 功率放大器。 偏置电压发生器耦合到第二晶体管，并且用于产生偏置电压以偏置第二晶体管的电极，其中偏置电压小于功率放大器的电源电压。

公开(公告)号：US07940125B2

公开(公告)日：2011-05-10

申请号：US12387177

申请日：2009-04-29

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F1/22

CPC分类号： H03F1/0266 ,  H03F1/0272 ,  H03F1/223 ,  H03F3/19 ,  H03F2200/102 ,  H03F2200/18 ,  H03F2200/451

摘要： The present invention discloses a power amplifier, comprising: a first transistor having a gate receiving an input signal; a second transistor coupled to the first transistor in a cascode configuration, in which a source of the second transistor is coupled to a drain of the first transistor, and a drain of the second transistor outputs an amplified signal; and a dynamic biasing circuit having two input terminals, one of which receiving the input signal, and the other one coupled to the drain of the first transistor, and an output terminal being coupled to a gate of the second transistor, thereby modulating the voltage at the drain of the first transistor.

摘要翻译： 本发明公开了一种功率放大器，包括：第一晶体管，其具有接收输入信号的栅极; 第二晶体管以共源共栅结构耦合到第一晶体管，其中第二晶体管的源极耦合到第一晶体管的漏极，第二晶体管的漏极输出放大的信号; 以及具有两个输入端的动态偏置电路，其中一个输入端接收输入信号，而另一个输入端耦合到第一晶体管的漏极，输出端耦合到第二晶体管的栅极， 第一晶体管的漏极。

公开(公告)号：US08536942B2

公开(公告)日：2013-09-17

申请号：US13176343

申请日：2011-07-05

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F3/38

CPC分类号： H03F3/45179 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/3211 ,  H03F3/193 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/18 ,  H03F2200/411 ,  H03F2200/534 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2200/99 ,  H03F2203/45112 ,  H03F2203/45481 ,  H03F2203/45544 ,  H03F2203/45554 ,  H03F2203/45604

摘要： A power amplifier is provided. The power amplifier includes a loading circuit, a first stage amplifying circuit, an analog pre-distorter, a loading circuit and a second stage amplifying circuit. The first stage amplifying circuit is coupled to the loading circuit to receive a first signal and output a second signal accordingly. The analog pre-distorter is coupled to the first stage amplifying circuit to detect the envelope of the second signal and generates a third signal according to the envelope. The second stage amplifying circuit is coupled to the first stage amplifying circuit to receive the second signal. The loading circuit is biased on the third signal. The gain of the first stage amplifying circuit is related to the third signal.

摘要翻译： 提供功率放大器。 功率放大器包括负载电路，第一级放大电路，模拟预失真器，负载电路和第二级放大电路。 第一级放大电路耦合到负载电路以接收第一信号并相应地输出第二信号。 模拟预失真器耦合到第一级放大电路以检测第二信号的包络，并根据包络产生第三信号。 第二级放大电路耦合到第一级放大电路以接收第二信号。 加载电路偏置在第三个信号上。 第一级放大电路的增益与第三信号有关。

公开(公告)号：US20090273399A1

公开(公告)日：2009-11-05

申请号：US12387177

申请日：2009-04-29

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F3/45

CPC分类号： H03F1/0266 ,  H03F1/0272 ,  H03F1/223 ,  H03F3/19 ,  H03F2200/102 ,  H03F2200/18 ,  H03F2200/451

摘要： The present invention discloses a power amplifier, comprising: a first transistor having a gate receiving an input signal; a second transistor coupled to the first transistor in a cascode configuration, in which a source of the second transistor is coupled to a drain of the first transistor, and a drain of the second transistor outputs an amplified signal; and a dynamic biasing circuit having two input terminals, one of which receiving the input signal, and the other one coupled to the drain of the first transistor, and an output terminal being coupled to a gate of the second transistor, thereby modulating the voltage at the drain of the first transistor.

摘要翻译： 本发明公开了一种功率放大器，包括：第一晶体管，其具有接收输入信号的栅极; 第二晶体管以共源共栅结构耦合到第一晶体管，其中第二晶体管的源极耦合到第一晶体管的漏极，第二晶体管的漏极输出放大的信号; 以及具有两个输入端的动态偏置电路，其中一个输入端接收输入信号，而另一个输入端耦合到第一晶体管的漏极，输出端耦合到第二晶体管的栅极， 第一晶体管的漏极。

公开(公告)号：US20080074194A1

公开(公告)日：2008-03-27

申请号：US11858137

申请日：2007-09-20

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F3/191

CPC分类号： H03F3/191

摘要： An apparatus for amplifying an input signal is disclosed. The apparatus includes a first amplifying circuit and a first resonating circuit. The first amplifying circuit includes a first transistor having a first gate for receiving the input signal. The first amplifying circuit amplifies the input signal to generate a first output signal. The first resonating circuit is coupled to the first amplifying circuit, wherein a first resonating frequency of the first resonating circuit is not equal to the operating frequency.

摘要翻译： 公开了一种用于放大输入信号的装置。 该装置包括第一放大电路和第一谐振电路。 第一放大电路包括具有用于接收输入信号的第一栅极的第一晶体管。 第一放大电路放大输入信号以产生第一输出信号。 第一谐振电路耦合到第一放大电路，其中第一谐振电路的第一谐振频率不等于工作频率。

公开(公告)号：US20070229140A1

公开(公告)日：2007-10-04

申请号：US11730908

申请日：2007-04-04

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： G06F7/44

CPC分类号： H03D7/1441 ,  H03D7/1458 ,  H03D2200/0043 ,  H03D2200/0084

摘要： A mixer includes first to fourth NMOS transistors, first and second switches, first to fourth current sources, a first impedance and a second impedance. The first NMOS transistor has a drain coupled to the first impedance and a drain of the third NMOS transistor, and a gate for receiving a positive input signal. The second NMOS transistor has a drain coupled to the second impedance and a drain of the fourth NMOS transistor, and a gate for receiving a negative input signal. Gates of the third and fourth NMOS transistors respectively receive the negative and positive input signals. The first switch is coupled between sources of the first and second NMOS transistors. The second switch is coupled between sources of the third and fourth NMOS transistors. The first to fourth current sources maintain constant currents flowing through the sources of the first to fourth NMOS transistors, respectively.

摘要翻译： 混频器包括第一至第四NMOS晶体管，第一和第二开关，第一至第四电流源，第一阻抗和第二阻抗。 第一NMOS晶体管具有耦合到第一阻抗的漏极和第三NMOS晶体管的漏极，以及用于接收正输入信号的栅极。 第二NMOS晶体管具有耦合到第二阻抗的漏极和第四NMOS晶体管的漏极，以及用于接收负输入信号的栅极。 第三和第四NMOS晶体管的栅极分别接收负输入信号和正输入信号。 第一开关耦合在第一和第二NMOS晶体管的源极之间。 第二开关耦合在第三和第四NMOS晶体管的源极之间。 第一至第四电流源分别保持流过第一至第四NMOS晶体管的源极的恒定电流。

公开(公告)号：US06529287B1

公开(公告)日：2003-03-04

申请号：US08859278

申请日：1997-05-19

申请人： Po-Chih Wang ,  Chung-Yi Yao ,  Thomas Sheng ,  Yen-Cheng Chen

发明人： Po-Chih Wang ,  Chung-Yi Yao ,  Thomas Sheng ,  Yen-Cheng Chen

IPC分类号： G06F1500

CPC分类号： H04N1/40

摘要： An image processing system integrates the scanning function with image processing function. The scanned image can be directly transmitted to a printer for high quality reproduction to serve a “scan to print” function. The system can also transmit the scanned image with or without being processed to a computer for further processing. The output from the computer can be transformed into image for rapid printout.

公开(公告)号：US20120056678A1

公开(公告)日：2012-03-08

申请号：US13226467

申请日：2011-09-06

申请人： Po-Chih Wang

发明人： Po-Chih Wang

IPC分类号： H03F3/04

CPC分类号： H03F1/223 ,  H03F1/0266 ,  H03F2200/102 ,  H03F2200/18

摘要： A power amplifier includes a first transistor, a second transistor and a bias voltage generator. The first transistor includes a gate electrode, a first electrode and a second electrode, where the gate electrode is coupled to a signal input terminal of the power amplifier. The second transistor includes a gate electrode, first electrode and a second electrode, where the second electrode of the second transistor is connected to the first electrode of the first transistor, and the first electrode of the second transistor is coupled to a signal output terminal of the power amplifier. The bias voltage generator is coupled to the second transistor, and is utilized for generating a bias voltage to bias the electrode of the second transistor, where the bias voltage is less than a supply voltage of the power amplifier.

摘要翻译： 功率放大器包括第一晶体管，第二晶体管和偏置电压发生器。 第一晶体管包括栅电极，第一电极和第二电极，其中栅电极耦合到功率放大器的信号输入端。 第二晶体管包括栅电极，第一电极和第二电极，其中第二晶体管的第二电极连接到第一晶体管的第一电极，第二晶体管的第一电极耦合到第一晶体管的信号输出端 功率放大器。 偏置电压发生器耦合到第二晶体管，并且用于产生偏置电压以偏置第二晶体管的电极，其中偏置电压小于功率放大器的电源电压。