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    SOI-based photonic bandgap devices
    5.
    发明授权
    SOI-based photonic bandgap devices 有权
    基于SOI的光子带隙器件

    公开(公告)号：US07298949B2

    公开(公告)日：2007-11-20

    申请号：US11042774

    申请日：2005-01-24

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  David Piede ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  David Piede ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/10 ,  G02B6/12

    CPC分类号： G02F1/025 ,  G02F2202/32

    摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.

    摘要翻译： 基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。 在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。 通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。 由于使用PBG用于横向模式限制，整个装置尺寸，电容和电阻也减小。

    Active manipulation of light in a silicon-on-insulator (SOI) structure
    7.
    发明授权
    Active manipulation of light in a silicon-on-insulator (SOI) structure 有权
    主动操纵绝缘体上硅（SOI）结构中的光

    公开(公告)号：US07187837B2

    公开(公告)日：2007-03-06

    申请号：US11069852

    申请日：2005-02-28

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    IPC分类号： G02B6/26 ,  G02B6/10 ,  H01L29/22 ,  H01L33/00 ,  H01L27/14 ,  H01L31/00

    CPC分类号： G02B6/12004 ,  G02F1/025 ,  G02F1/292 ,  G02F2001/294

    摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired “shaped” (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.

    摘要翻译： 用于主动地控制SOI基光学结构内的光的操纵的布置利用形成在SOI层内的掺杂区域和硅绝缘体 - 硅电容（SISCAP）结构的多晶硅层。 这些区域相反地掺杂以形成有源器件，其中在相对掺杂区域之间施加电压电位用于改变受影响区域中的折射率并改变传播通过该区域的光信号的特性。 可以有利地形成掺杂区域以呈现任何期望的“成形”（例如，透镜，棱镜，布拉格光栅等），以便根据这些器件的已知特性来操纵传播光束。 本发明的一个或多个有源器件可以包括在形成SISCAP的SOI基光学元件（例如，诸如Mach-Zehnder干涉仪，环形谐振器，光学开关等）中，以形成活跃的 ，可调元素。

    Permanent light coupling arrangement and method for use with thin silicon optical waveguides
    8.
    发明授权
    Permanent light coupling arrangement and method for use with thin silicon optical waveguides 有权
    永久光耦合布置及其与薄硅光波导的使用方法

    公开(公告)号：US07020364B2

    公开(公告)日：2006-03-28

    申请号：US10668947

    申请日：2003-09-23

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/34

    CPC分类号： G02B6/4206

    摘要： A trapezoidal shaped single-crystal silicon prism is formed and permanently attached to an SOI wafer, or any structure including a silicon optical waveguide. In order to provide efficient optical coupling, the dopant species and concentration within the silicon waveguide is chosen such that the refractive index of the silicon waveguide is slightly less than that of the prism coupler (refractive index of silicon≈3.5). An intermediate evanescent coupling layer, disposed between the waveguide and the prism coupler, comprises a refractive index less than both the prism and the waveguide. In one embodiment, the evanescent coupling layer comprises a constant thickness. In an alternative embodiment, the evanescent coupling layer may be tapered to improve coupling efficiency between the prism and the waveguide. Methods of making the coupling arrangement are also disclosed.

    摘要翻译： 形成梯形形状的单晶硅棱镜，并且永久地附着到SOI晶片或包括硅光波导的任何结构。 为了提供有效的光耦合，选择硅波导内的掺杂物种类和浓度使得硅波导的折射率略小于棱镜耦合器的折射率（硅折射率为0.35）。 设置在波导和棱镜耦合器之间的中间消逝耦合层包括小于棱镜和波导两者的折射率。 在一个实施例中，ev逝耦合层包括恒定的厚度。 在替代实施例中，渐逝耦合层可以是锥形的，以提高棱镜和波导之间的耦合效率。 还公开了制造耦合装置的方法。

    Silicon nanotaper couplers and mode-matching devices
    9.
    发明授权
    Silicon nanotaper couplers and mode-matching devices 有权
    硅纳米器耦合器和模式匹配器件

    公开(公告)号：US07013067B2

    公开(公告)日：2006-03-14

    申请号：US11054205

    申请日：2005-02-09

    申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

    IPC分类号： G02B6/26

    CPC分类号： G02B6/1228 ,  G02B6/4204

    摘要： An arrangement for coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer (SOI layer) of a silicon-an-insulator (SOI) structure includes a silicon nanotaper structure formed in the (SOI layer) and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer is disposed so as to overly a portion of a dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement is disposed over the dielectric waveguide coupling layer and used to couple between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.

    摘要翻译： 在自由空间传播的光信号和形成于硅 - 绝缘体（SOI））结构的上硅层（SOI层）中的超薄硅波导之间的耦合的布置包括在（SOI层）中形成的硅纳米锥结构， 并耦合到超薄硅波导。 电介质波导耦合层设置成在去除了SOI层的相关部分的区域中的绝缘层的一部分上。 电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间信号和超薄硅波导之间形成模式转换区域。 自由空间光耦合装置设置在电介质波导耦合层上，用于将自由空间与电介质波导耦合层之间耦合，此后进入超薄硅波导。

    Method of using a Manhattan layout to realize non-Manhattan shaped optical structures
    10.
    发明授权
    Method of using a Manhattan layout to realize non-Manhattan shaped optical structures 有权
    使用曼哈顿布局实现非曼哈顿形光学结构的方法

    公开(公告)号：US07000207B2

    公开(公告)日：2006-02-14

    申请号：US10820356

    申请日：2004-04-08

    申请人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    发明人： Prakash Gothoskar ,  Margaret Ghiron ,  Vipulkumar Patel ,  Robert Keith Montgomery ,  Kalpendu Shastri ,  Soham Pathak ,  Katherine A. Yanushefski

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5077

    摘要： A system and method for providing the layout of non-Manhattan shaped integrated circuit elements using a Manhattan layout system utilizes a plurality of minimal sized polygons (e.g., rectangles) to fit within the boundaries of the non-Manhattan element. The rectangles are fit such that at least one vertex of each rectangle coincides with a grid point on the Manhattan layout system. Preferably, the rectangles are defined by using the spacing being adjacent grid points as the height of each rectangle. As the distance between adjacent grid points decreases, the layout better matches the actual shape of the non-Manhattan element. The system and method then allows for electrical and optical circuit elements to be laid out simultaneously, using the same layout software and equipment.

    摘要翻译： 使用曼哈顿布局系统提供非曼哈顿形集成电路元件的布局的系统和方法利用多个最小尺寸的多边形（例如，矩形）来装配在非曼哈顿元件的边界内。 矩形被配合成使得每个矩形的至少一个顶点与曼哈顿布局系统上的网格点重合。 优选地，通过使用相邻网格点的间隔作为每个矩形的高度来定义矩形。 随着相邻网格点之间的距离减小，布局更好地匹配非曼哈顿元素的实际形状。 然后，系统和方法可以使用相同的布局软件和设备同时布置电气和光学电路元件。