公开(公告)号：US08435608B1

公开(公告)日：2013-05-07

申请号：US12163670

申请日：2008-06-27

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

IPC分类号： H05H1/24

CPC分类号： H01L21/0273 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

摘要： Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.

摘要翻译： 提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。 所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。 根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力（例如，2-5托）的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。 还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。 所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。