公开(公告)号：US20140322901A1

公开(公告)日：2014-10-30

申请号：US14193839

申请日：2014-02-28

Applicant: QD VISION, INC.

Inventor： DIYUN HUANG ,  CHUNMING WANG ,  ZHIMING WANG ,  JONATHAN S. STECKEL

IPC: H01L21/02

CPC classification number: H01L21/02628 ,  C01G15/006 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02601

Abstract: A method for preparing semiconductor nanocrystals includes adding a non-protonated surface modification agent to semiconductor nanocrystal cores in a liquid medium to form a mixture; adding one or more precursors for forming a shell including a semiconductor material to the mixture under conditions for forming the shell over at least a portion of an outer surface of the cores, and adding an acid ligand to the mixture after addition of at least a portion of the one or more precursors. Semiconductor nanocrystals, other methods of making semiconductor nanocrystals, compositions and products including semiconductor nanocrystals are also disclosed.

Abstract translation: 制备半导体纳米晶体的方法包括在液体介质中向半导体纳米晶核添加非质子化表面改性剂以形成混合物; 在形成所述壳体的至少一部分所述核心的至少一部分的条件下，向所述混合物中加入一种或多种用于形成包含半导体材料的壳体的前体，以及在加入至少一部分之后向所述混合物中加入酸配体 的一种或多种前体。 还公开了半导体纳米晶体，制备半导体纳米晶体的其它方法，组合物和包括半导体纳米晶体的产品。

公开(公告)号：US20140284549A1

公开(公告)日：2014-09-25

申请号：US14215215

申请日：2014-03-17

Applicant: QD VISION, INC.

Inventor： WENHAO LIU ,  PETER M. ALLEN ,  ANNIE CHO WON ,  ZHIMING WANG ,  CRAIG A. BREEN

IPC: H01L33/24 ,  H01L33/26 ,  H01L33/06 ,  H01L33/00

CPC classification number: C09K11/883 ,  C09D11/52 ,  C09K11/025 ,  C09K11/565 ,  H01L33/06 ,  H01L33/24 ,  H01L33/26

Abstract: A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100° C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.

Abstract translation: 提供了在100℃下发射半峰全宽为约30nm或更小的峰值发射的绿光的半导体纳米晶体，以及制备涂覆的半导体纳米晶体的方法。 还公开了包括本文所述的半导体纳米晶体的材料和其它产品以及通过本文所述的方法制备的包括半导体纳米晶体的材料和其它产品。