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    METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS
    2.
    发明申请
    METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS 有权
    制备半导体纳米晶体的方法

    公开(公告)号：US20140140918A1

    公开(公告)日：2014-05-22

    申请号：US14081755

    申请日：2013-11-15

    Applicant: QD VISION, INC.

    Inventor： CRAIG BREEN ,  WENHAO LIU

    IPC: C01B19/04

    CPC classification number: C01B19/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B19/007 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60 ,  H01L21/0237 ,  H01L21/02428 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628

    Abstract: A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed.

    Abstract translation: 公开了一种制备半导体纳米晶体的方法，该方法包括在反应温度下向包含金属源和液体介质的溶液中加入次膦硫属化物，以形成包含金属和硫属元素的半导体的反应产物，并淬灭 反应混合物形成量子点。 还公开了外敷方法。 还公开了半导体纳米晶体。

    SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS
    6.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS, METHODS FOR MAKING SAME, COMPOSITIONS, AND PRODUCTS 审中-公开

    公开(公告)号：US20150021548A1

    公开(公告)日：2015-01-22

    申请号：US14451125

    申请日：2014-08-04

    Applicant: QD Vision, Inc.

    Inventor： WENHAO LIU ,  CRAIG BREEN ,  SETH COE-SULLIVAN

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/28

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  C09D11/52 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/0029 ,  H01L33/28 ,  H01L33/502 ,  Y10S977/774

    Abstract: A semiconductor nanocrystal characterized by having a solid state photoluminescence external quantum efficiency at a temperature of 90° C. or above that is at least 95% of the solid state photoluminescence external quantum efficiency of the semiconductor nanocrystal at 25° C. is disclosed. A semiconductor nanocrystal having a multiple LO phonon assisted charge thermal escape activation energy of at least 0.5 eV is also disclosed. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 590 nm to 650 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 5.5. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 545 nm to 590 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 7. A semiconductor nanocrystal capable of emitting light with a maximum peak emission at a wavelength in a range from 495 nm to 545 nm characterized by an absorption spectrum, wherein the absorption ratio of OD at 325 nm to OD at 450 nm is greater than 10. A composition comprising a plurality of semiconductor nanocrystals wherein the solid state photoluminescence efficiency of the composition at a temperature of 90° C. or above is at least 95% of the solid state photoluminescence efficiency of the composition 25° C. is further disclosed. A method for preparing semiconductor nanocrystals comprises introducing one or more first shell chalcogenide precursors and one or more first shell metal precursors to a reaction mixture including semiconductor nanocrystal cores, wherein the first shell chalcogenide precursors are added in an amount greater than the first shell metal precursors by a factor of at least about 2 molar equivalents and reacting the first shell precursors at a first reaction temperature of at least 300° C. to form a first shell on the semiconductor nanocrystal cores. Populations, compositions, components and other products including semiconductor nanocrystals of the invention are disclosed. Populations, compositions, components and other products including semiconductor nanocrystals made in accordance with any method of the invention is also disclosed.

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