公开(公告)号：US20130273247A1

公开(公告)日：2013-10-17

申请号：US13913108

申请日：2013-06-07

Applicant: QD Vision, Inc.

Inventor： Justin W. KAMPLAIN ,  Zhengguo ZHU

IPC: H01L49/00

CPC classification number: H01L49/006 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/7492 ,  C09K11/883 ,  C30B29/40 ,  H01L21/02439 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/0665 ,  Y10S977/774 ,  Y10S977/896

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed. In certain embodiments, a semiconductor nanocrystal includes one or more Group IIIA and one or more Group VA elements.

Abstract translation: 公开了制备半导体纳米晶体的方法。 该方法包括将包含一种或多种阳离子前体，一种或多种阴离子前体和一种或多种胺的前体混合物加入到包含一种或多种酸，一种或多种酚化合物和溶剂的配体混合物中以形成反应混合物， 其中（一种或多种酚化合物加上一种或多种酸加一种或多种胺化合物）与初始包含在反应混合物中的一种或多种阳离子的摩尔比大于或等于约6，并加热 反应混合物在足以产生具有预定组成的半导体纳米晶体的温度和一段时间内。 还公开了在其上形成缓冲层和/或外涂层的方法。 还公开了包括本发明的半导体纳米晶体的半导体纳米晶体和组合物。 在某些实施方案中，半导体纳米晶体包括一种或多种IIIA族和一种或多种VA族元素。