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公开(公告)号:US20140264629A1
公开(公告)日:2014-09-18
申请号:US13829864
申请日:2013-03-14
Applicant: QUALCOMM INCORPORATED
Inventor: John J. Zhu , Giridhar Nallapati , Chidi Chidambaram
IPC: H01L23/528 , H01L21/768
CPC classification number: H01L23/528 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823481 , H01L27/0207 , H01L27/088 , H01L2924/0002 , H01L2924/00
Abstract: A local interconnect structure is provided that includes a gate-directed local interconnect coupled to an adjacent gate layer through a diffusion-directed local interconnect.
Abstract translation: 提供局部互连结构,其包括通过扩散导向的局部互连耦合到相邻栅极层的栅极定向局部互连。
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公开(公告)号:US20180058943A1
公开(公告)日:2018-03-01
申请号:US15246006
申请日:2016-08-24
Applicant: QUALCOMM Incorporated
Inventor: Lixin Ge , Chidi Chidambaram , Bin Yang , Jiefeng Jeff Lin , Giridhar Nallapati , Bo Yu , Jie Deng , Jun Yuan , Stanley Seungchul Song
IPC: G01K7/01 , H01L21/66 , H01L49/02 , H01L23/528 , H01L21/3213 , H01L21/768 , G01K7/24
CPC classification number: G01K7/01 , G01K7/186 , G01K7/24 , H01L21/32139 , H01L21/76895 , H01L22/34 , H01L23/34 , H01L23/5228 , H01L23/528 , H01L27/0629 , H01L28/24
Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.
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