公开(公告)号：US20190195700A1

公开(公告)日：2019-06-27

申请号：US16268669

申请日：2019-02-06

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L23/522 ,  H01L23/34 ,  G01K7/18 ,  H01L49/02 ,  G01K7/24 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L21/66

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US20180058943A1

公开(公告)日：2018-03-01

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Chidi Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L21/66 ,  H01L49/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  G01K7/24

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US09762231B2

公开(公告)日：2017-09-12

申请号：US14812516

申请日：2015-07-29

Applicant: QUALCOMM Incorporated

Inventor： Alvin Leng Sun Loke ,  Bo Yu ,  Stephen Clifford Thilenius ,  Reza Jalilizeinali ,  Patrick Isakanian

IPC: H03B1/00 ,  H03K3/00 ,  H03K17/082 ,  H03K19/003 ,  H03K19/0185

CPC classification number: H03K17/0822 ,  H03K19/00315 ,  H03K19/018521

Abstract: An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.

公开(公告)号：US20160269017A1

公开(公告)日：2016-09-15

申请号：US14812516

申请日：2015-07-29

Applicant: QUALCOMM Incorporated

Inventor： Alvin Leng Sun Loke ,  Bo Yu ,  Stephen Clifford Thilenius ,  Reza Jalilizeinali ,  Patrick Isakanian

IPC: H03K17/082

CPC classification number: H03K17/0822 ,  H03K19/00315 ,  H03K19/018521

Abstract: An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.

Abstract translation: 提供电子电路和操作电子电路的方法。 电子电路包括用于将输出电路的输入/输出（I / O）节点提升到第一电压的上拉晶体管和用于将上拉晶体管耦合到I / O节点的第一隔离晶体管。 电子电路还包括用于将I / O节点下拉到第二电压的下拉晶体管和用于将下拉晶体管耦合到I / O节点的第二隔离晶体管。 在电子电路中，上拉和下拉晶体管是支持第一漏极 - 源极电压和第一栅极 - 源极电压的晶体管，而第一和第二隔离晶体管是支撑第一漏极 并且第二栅极至源极电压大于第一栅极至源极电压。

公开(公告)号：US10247617B2

公开(公告)日：2019-04-02

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  G01K7/24 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/66 ,  H01L23/528 ,  H01L49/02 ,  G01K7/18 ,  H01L23/34 ,  H01L23/522 ,  H01L27/06

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.