公开(公告)号：US20200098858A1

公开(公告)日：2020-03-26

申请号：US16138170

申请日：2018-09-21

Applicant: QUALCOMM Incorporated

Inventor： Haining Yang ,  Jie Deng

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L27/118 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3065

Abstract: Aspects disclosed herein include circuits employing a double diffusion break (DDB) and a single diffusion break (SDB) in different type diffusion regions, and related fabrication methods are disclosed. In exemplary aspects disclosed herein, either a DDB or a SDB is formed in the N-type diffusion region(s) and the opposing type diffusion, either a SDB or DDB, is formed in the P-type diffusion region(s). Forming different diffusion breaks between a DDB and a SDB in different diffusion regions of the circuit can be employed to induce channel strain that will increase carrier mobility of either P-type or N-type semiconductor devices formed in respective P-type or N-type diffusion region(s), while avoiding or reducing such induced channel strain in either P-type or N-type semiconductor devices formed in respective P- or N-type diffusion region(s) that may degrade carrier mobility.

公开(公告)号：US20200066630A1

公开(公告)日：2020-02-27

申请号：US16106679

申请日：2018-08-21

Applicant: QUALCOMM Incorporated

Inventor： Junjing Bao ,  Jie Deng ,  John Zhu ,  Giridhar Nallapati

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  H01L21/8234

Abstract: A semiconductor device includes a contact via and a metal interconnect on the contact via. The metal interconnect has a portion extending in a lengthwise direction that is wrapped around and in contact with a sidewall of the contact via. Along a widthwise direction, the metal interconnect does not contact the sidewall of the contact via.

公开(公告)号：US20190195700A1

公开(公告)日：2019-06-27

申请号：US16268669

申请日：2019-02-06

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L23/522 ,  H01L23/34 ,  G01K7/18 ,  H01L49/02 ,  G01K7/24 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L21/66

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US20180058943A1

公开(公告)日：2018-03-01

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Chidi Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  H01L21/66 ,  H01L49/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/768 ,  G01K7/24

CPC classification number: G01K7/01 ,  G01K7/186 ,  G01K7/24 ,  H01L21/32139 ,  H01L21/76895 ,  H01L22/34 ,  H01L23/34 ,  H01L23/5228 ,  H01L23/528 ,  H01L27/0629 ,  H01L28/24

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

公开(公告)号：US10892322B2

公开(公告)日：2021-01-12

申请号：US16138170

申请日：2018-09-21

Applicant: QUALCOMM Incorporated

Inventor： Haining Yang ,  Jie Deng

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/8234 ,  H01L27/118 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: Aspects disclosed herein include circuits employing a double diffusion break (DDB) and a single diffusion break (SDB) in different type diffusion regions, and related fabrication methods are disclosed. In exemplary aspects disclosed herein, either a DDB or a SDB is formed in the N-type diffusion region(s) and the opposing type diffusion, either a SDB or DDB, is formed in the P-type diffusion region(s). Forming different diffusion breaks between a DDB and a SDB in different diffusion regions of the circuit can be employed to induce channel strain that will increase carrier mobility of either P-type or N-type semiconductor devices formed in respective P-type or N-type diffusion region(s), while avoiding or reducing such induced channel strain in either P-type or N-type semiconductor devices formed in respective P- or N-type diffusion region(s) that may degrade carrier mobility.

公开(公告)号：US10247617B2

公开(公告)日：2019-04-02

申请号：US15246006

申请日：2016-08-24

Applicant: QUALCOMM Incorporated

Inventor： Lixin Ge ,  Periannan Chidambaram ,  Bin Yang ,  Jiefeng Jeff Lin ,  Giridhar Nallapati ,  Bo Yu ,  Jie Deng ,  Jun Yuan ,  Stanley Seungchul Song

IPC: G01K7/01 ,  G01K7/24 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/66 ,  H01L23/528 ,  H01L49/02 ,  G01K7/18 ,  H01L23/34 ,  H01L23/522 ,  H01L27/06

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.