Memory repair system and method
    3.
    发明授权

    公开(公告)号:US12300337B2

    公开(公告)日:2025-05-13

    申请号:US17944691

    申请日:2022-09-14

    Abstract: A system for repairing a random access memory may include serial test interface logic, fuse-sense logic, a repair data register chain, and multiplexing logic. The repair data register chain may include serially interconnected data registers configured to shift data through the repair data register chain. Each data register of the repair data register chain may have a data output configured to be coupled to a repair information input of the random access memory. The multiplexing logic may be configured to provide a soft-repair mode and a hard-repair mode. When the soft-repair mode is selected, the multiplexing logic may be configured to receive soft-repair data provided by the serial test interface logic into the data registers. When the hard-repair mode is selected, the multiplexing logic may be configured to receive the data provided by the fuse-sense logic into the data registers.

    Efficient test architecture for multi-die chips

    公开(公告)号:US10429441B2

    公开(公告)日:2019-10-01

    申请号:US15603779

    申请日:2017-05-24

    Abstract: Test architectures for multi-die chips are provided herein according to embodiments of the present disclosure. In certain aspects, an exemplary test architecture enables an external tester to perform various tests on a multi-die chip that includes multiple dies. In a first test mode, the test architecture enables the external tester to currently perform die-level tests on the multiple dies. In a second test mode, the test architecture enables the external tester to perform a chip-level test on the multi-die chip. The chip-level test may include die-to-die tests for testing interconnections between the multiple dies on the multi-die chip. The chip-level test may also include a boundary input/output (I/O) test for testing external connections between the multi-die chip and one or more devices external to the multi-die chip.

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