MEMORY WITH DYNAMIC VOLTAGE SCALING

    公开(公告)号:US20210065772A1

    公开(公告)日:2021-03-04

    申请号:US16945303

    申请日:2020-07-31

    Abstract: Methods and apparatuses for to memories using dynamic voltage scaling are presented. The apparatus includes memory configured to communicate with a host. The memory includes a peripheral portion and a memory array. The memory is further configured to receive, from at least one power management circuit, a first supply voltage and a second supply voltage. The memory further includes a switch circuit. The switch circuit is configured to selectively provide the first supply voltage and the second supply voltage to the peripheral portion. The first supply voltage is static and has a first voltage range. The second supply voltage has a low second voltage range and a high second voltage range.

    MEMORY WITH SYSTEM ECC
    2.
    发明申请

    公开(公告)号:US20210064463A1

    公开(公告)日:2021-03-04

    申请号:US16944110

    申请日:2020-07-30

    Abstract: Methods and apparatuses for a system error-correcting code function are presented. The apparatus includes a memory configured to communicate with a host. The memory includes a memory array configured to store data. The memory is configured to provide the data stored in the memory array to the host in performing computing functions and configured to provide an error-correction code (ECC) associated with the data to the host. The ECC is not stored in the memory array in a first configuration of the memory and is stored in the memory array in a second configuration of the memory.

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