Comb / fishbone metal stack
    1.
    发明授权

    公开(公告)号:US12009295B2

    公开(公告)日:2024-06-11

    申请号:US17454203

    申请日:2021-11-09

    CPC classification number: H01L23/528 H01L27/092

    Abstract: An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/drain terminal A. Each interconnect stack of the first plurality of interconnect stacks extends in a second direction over at least a portion of the first set of MOS transistors and includes consecutive metal layer interconnects. Further, the IC includes a first comb interconnect structure extending in a first direction orthogonal to the second direction, with comb fingers extending in the second direction over at least a portion of the first set of MOS transistors and the first plurality of interconnect stacks. The first comb interconnect structure is coupled to the first plurality of interconnect stacks.

    COMB / FISHBONE METAL STACK
    3.
    发明公开

    公开(公告)号:US20230141245A1

    公开(公告)日:2023-05-11

    申请号:US17454203

    申请日:2021-11-09

    CPC classification number: H01L23/528 H01L27/092

    Abstract: An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/drain terminal A. Each interconnect stack of the first plurality of interconnect stacks extends in a second direction over at least a portion of the first set of MOS transistors and includes consecutive metal layer interconnects. Further, the IC includes a first comb interconnect structure extending in a first direction orthogonal to the second direction, with comb fingers extending in the second direction over at least a portion of the first set of MOS transistors and the first plurality of interconnect stacks. The first comb interconnect structure is coupled to the first plurality of interconnect stacks.

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