公开(公告)号：US20190326448A1

公开(公告)日：2019-10-24

申请号：US15957484

申请日：2018-04-19

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Fabio Alessio MARINO ,  Narasimhulu KANIKE ,  Plamen Vassilev KOLEV ,  Qingqing LIANG ,  Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Aristotele HADJICHRISTOS

IPC: H01L29/93 ,  H01L29/45 ,  H01L29/06

Abstract: Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a semiconductor region, an insulative layer, a first terminal, and a first non-insulative region coupled to the first terminal, the insulative layer being disposed between the first non-insulative region and the semiconductor region. In certain aspects, the insulative layer is disposed adjacent to a first side of the semiconductor region. In certain aspects, the semiconductor device also includes a second terminal, and a first silicide layer coupled to the second terminal and disposed adjacent to a second side of the semiconductor region, the first side and the second side being opposite sides of the semiconductor region.

公开(公告)号：US20190305143A1

公开(公告)日：2019-10-03

申请号：US15937021

申请日：2018-03-27

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Francesco CAROBOLANTE ,  Paolo MENEGOLI

IPC: H01L29/94 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66

Abstract: In certain aspects, a variable capacitor comprises a well having a first side and a second side, an N+ diffusion abutted the well at the first side, a P+ diffusion abutted the well at the second side, and an insulator on the well. The variable capacitor further comprises a gate plate on the insulator having a first gate segment and a second gate segment, wherein the first gate segment and the second gate segment are configured to have different work functions.

公开(公告)号：US20190221677A1

公开(公告)日：2019-07-18

申请号：US15871638

申请日：2018-01-15

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Narasimhulu KANIKE ,  Francesco CAROBOLANTE ,  Paolo MENEGOLI ,  Qingqing LIANG

IPC: H01L29/94 ,  H01L29/93 ,  H01G7/06 ,  H01L29/66

CPC classification number: H01L29/94 ,  H01G7/06 ,  H01L29/165 ,  H01L29/36 ,  H01L29/66189 ,  H01L29/93

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, an insulative layer, and a first non-insulative region, the insulative layer being disposed between the semiconductor region and the first non-insulative region. In certain aspects, the semiconductor variable capacitor may also include a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, the second non-insulative region and the third non-insulative region having different doping types. In certain aspects, the semiconductor variable capacitor may also include an implant region disposed between the semiconductor region and the insulative layer. The implant region may be used to adjust the flat-band voltage of the semiconductor variable capacitor.

公开(公告)号：US20190006530A1

公开(公告)日：2019-01-03

申请号：US15637924

申请日：2017-06-29

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Paolo MENEGOLI ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Francesco CAROBOLANTE

IPC: H01L29/93 ,  H01L29/94 ,  H01L27/08 ,  H01L29/66

Abstract: Certain aspects of the present disclosure provide a variable capacitor. The variable capacitor generally includes a semiconductor region, a dielectric layer disposed adjacent to the semiconductor region, and a first non-insulative region disposed above the dielectric layer, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, a doping concentration of the semiconductor region changes as a function of a distance across the semiconductor region from the dielectric layer or the second non-insulative region.

公开(公告)号：US20180374963A1

公开(公告)日：2018-12-27

申请号：US15706352

申请日：2017-09-15

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Francesco CAROBOLANTE ,  Paolo MENEGOLI

IPC: H01L29/93 ,  H01L27/08 ,  H01L29/94 ,  H01L27/12 ,  H01L27/06 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a semiconductor region disposed adjacent to a first side of the insulative layer. The semiconductor capacitor also includes a first non-insulative region disposed adjacent to a second side of the insulative layer. In certain aspects, the semiconductor region may include a second non-insulative region, wherein the semiconductor region includes at least two regions having at least one of different doping concentrations or different doping types, and wherein one or more junctions between the at least two regions are disposed above or below the first non-insulative region.

公开(公告)号：US20180233603A1

公开(公告)日：2018-08-16

申请号：US15431109

申请日：2017-02-13

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Paolo MENEGOLI ,  Narasimhulu KANIKE ,  Francesco CAROBOLANTE

IPC: H01L29/93 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/93 ,  H01G7/00 ,  H01L27/0808 ,  H01L29/0692 ,  H01L29/66174 ,  H01L29/66189 ,  H01L29/94

Abstract: Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region. In certain aspects, the first non-insulative region is disposed above a first portion of the semiconductor region and a second portion of the semiconductor region, and the first portion and the second portion of the semiconductor region are disposed adjacent to a first side and a second side, respectively, of the control region or the second non-insulative region.

公开(公告)号：US20190312152A1

公开(公告)日：2019-10-10

申请号：US15946628

申请日：2018-04-05

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Sinan GOKTEPELI ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Aristotele HADJICHRISTOS

IPC: H01L29/93 ,  H01L27/12 ,  H01L29/36

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

公开(公告)号：US20180337547A1

公开(公告)日：2018-11-22

申请号：US15599520

申请日：2017-05-19

Applicant: QUALCOMM Incorporated

Inventor： Paolo MENEGOLI ,  Mark WHITE, III

IPC: H02J7/02 ,  H02J7/00 ,  H02J50/12 ,  H02J50/70

CPC classification number: H02J7/025 ,  H02J7/0027 ,  H02J7/0044 ,  H02J50/12 ,  H02J50/40 ,  H02J50/70 ,  H02J50/80 ,  H02J2007/0095

Abstract: Techniques for reducing reflected reactance in a wireless power transfer system are provided. An example apparatus includes a resonant network including a variable reactance element, such that the resonant network is configured to resonant when the variable reactance element is at a resonant reactance value, a control circuit operably coupled to the variable reactance element and configured to determine a first reactance value and a second reactance value, such that an output of the PRU is the desired output when the variable reactance element is either the first reactance value or the second reactance value, and the first reactance value is below the resonant reactance value and the second reactance value is above the resonant reactance value, determine an indication of a source reactance associated with a wireless power source, and adjust the variable reactance element to either the first reactance value or the second reactance value based on the indication of the source reactance.

公开(公告)号：US20180083473A1

公开(公告)日：2018-03-22

申请号：US15268042

申请日：2016-09-16

Applicant: QUALCOMM Incorporated

Inventor： Paolo MENEGOLI ,  Linda IRISH ,  Fabio Alessio MARINO

IPC: H02J7/02 ,  H02J7/00 ,  H02J5/00

CPC classification number: H02J7/025 ,  H02J3/01 ,  H02J5/005 ,  H02J7/0052 ,  H02J50/12 ,  H02M1/44 ,  Y02E40/40

Abstract: Techniques for tuning a resonant network are discussed. An example apparatus for controlling an output parameter with a resonant network comprising a differential-series circuit with a first variable reactive element on a first branch of the differential-series circuit and a second variable reactive element on a second branch of the differential-series circuit, such that the resonant network is coupled to an output circuit. The apparatus includes a common control element operably coupled to the first variable reactive element and the second variable reactive element, and a control circuit operably coupled to the output circuit and the common control element and configured to vary an impedance of the resonant network based on a value of the output parameter in the output circuit.

公开(公告)号：US20180083472A1

公开(公告)日：2018-03-22

申请号：US15267597

申请日：2016-09-16

Applicant: QUALCOMM Incorporated

Inventor： Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Fabio Alessio MARINO

IPC: H02J7/02 ,  H02J7/04 ,  H02J50/12

CPC classification number: H02J7/025 ,  H01G7/06 ,  H02J7/045 ,  H02J7/345 ,  H02J50/12 ,  H02J50/80 ,  H02J50/90 ,  Y02T10/7022

Abstract: Techniques for controlling a resonant network are disclosed. An example of an apparatus for varying capacitance in a resonant network includes a variable capacitor circuit configured to vary a capacitance in response to a control signal, at least one biasing component operably coupled to the variable capacitor circuit, and a control circuit configured to generate the control signal, such that the control signal includes a first tuning value corresponding to a first capacitance value, and output the control signal at the first tuning value to reduce an impedance of the at least one biasing component and vary the capacitance of the variable capacitor circuit, such that the impedance of the at least one biasing component subsequently increases when the first capacitance value is realized.