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    PROTECTION VOLTAGE GENERATING CIRCUIT WITH MONOTONIC AND STABLE POWER SUPPLY VOLTAGE BEHAVIOR
    1.
    发明公开
    PROTECTION VOLTAGE GENERATING CIRCUIT WITH MONOTONIC AND STABLE POWER SUPPLY VOLTAGE BEHAVIOR 审中-公开

    公开(公告)号：US20240192715A1

    公开(公告)日：2024-06-13

    申请号：US18077402

    申请日：2022-12-08

    申请人： CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LTD.

    发明人： Angel C. Abusleme Hoffman ,  Axel Thomsen

    IPC分类号： G05F1/571 ,  G05F1/46

    CPC分类号： G05F1/571 ,  G05F1/461 ,  G05F1/465

    摘要： A circuit and method for generating a protection voltage includes a pair of voltage-generating circuits that generate voltages from the power supply voltage. The voltages have a differing dependence on the power supply voltage so that a difference between the first voltage and the second voltage changes sign for a particular value of the power supply voltage. The voltages are supplied to a protection voltage generating circuit that includes a pair of amplifiers having inputs that receive a respective one of the voltages and each of the amplifiers provides negative feedback to the other. An output circuit generates the protection voltage according to a maximum or a minimum value among the amplifier outputs, so that the protection voltage is monotonic with respect to variation of the power supply voltage.

    Voltage reference buffer circuit
    4.
    发明授权
    Voltage reference buffer circuit 有权

    公开(公告)号：US11567522B2

    公开(公告)日：2023-01-31

    申请号：US17405380

    申请日：2021-08-18

    申请人： REALTEK SEMICONDUCTOR CORPORATION

    发明人： Che-Wei Chang ,  Kai-Yin Liu ,  Liang-Huan Lei ,  Shih-Hsiung Huang

    IPC分类号： H02H7/00 ,  H02H9/00 ,  G05F1/618 ,  G05F3/24 ,  G05F1/575 ,  G05F1/571 ,  G05F1/573 ,  G05F1/40

    摘要： Disclosed is a voltage reference buffer circuit including a first, second, third, and fourth bias generators and a first, second, third, and fourth driving components. The first, second, third, and fourth bias generators generate bias voltages to control the first, second, third, and fourth driving components respectively. The first, second, third, and fourth driving components are coupled in sequence, wherein the first and second driving components are different types of transistors and jointly output a first reference voltage, the third and fourth driving components are different types of transistors and jointly output a second reference voltage, and the group of the first and second driving components is separated from the group of the third and fourth driving components by a resistance load.

    Radiation tolerant temperature compensated delayed undervoltage lockout and overvoltage shutdown
    7.
    发明授权
    Radiation tolerant temperature compensated delayed undervoltage lockout and overvoltage shutdown 有权

    公开(公告)号：US11289897B1

    公开(公告)日：2022-03-29

    申请号：US17461814

    申请日：2021-08-30

    申请人： Crane Electronics, Inc.

    发明人： Cuon Lam ,  Ryan Ricchiuti ,  Reza Ahmadi ,  Sovann Song

    IPC分类号： G05F1/569 ,  G05F1/575 ,  G05F1/567 ,  G05F1/571 ,  H02H7/12 ,  G05F1/56 ,  H02H1/00

    摘要： A circuit includes a voltage detection path having a first transistor and a second transistor coupled to the first voltage detection path by a first terminal of the second transistor. The first voltage detection path includes: a first current source and a first voltage divider unit coupled to the first current source. The first transistor is coupled to the first voltage divider unit by a first terminal of the first transistor. A first voltage value at a second terminal of the first transistor is configured to switch between a first high voltage value and a first low voltage value at least partially based on a first detection voltage value provided at the first terminal of the first transistor by the first voltage divider unit. A second voltage at a second terminal of the second transistor is configured to switch between a second high voltage value and a second low voltage value at least partially based on the first voltage value at the second terminal of the first transistor.

    POWER SUPPLY SEMICONDUCTOR INTEGRATED CIRCUIT
    8.
    发明申请
    POWER SUPPLY SEMICONDUCTOR INTEGRATED CIRCUIT 有权

    公开(公告)号：US20220075403A1

    公开(公告)日：2022-03-10

    申请号：US17458048

    申请日：2021-08-26

    申请人： Kohei SAKURAI ,  Shinichiro MAKI

    发明人： Kohei SAKURAI ,  Shinichiro MAKI

    IPC分类号： G05F1/575 ,  G05F3/26 ,  G05F1/573 ,  G05F1/571

    摘要： A power supply semiconductor IC includes: an output transistor connected between a voltage-input terminal and a voltage-output terminal; a control circuit that controls the output transistor based on a feedback voltage of an output voltage; a current-limit circuit that limits an output current of the output transistor such that the output current is not equal to or greater than a current limit; a first transistor constituting a current-mirror circuit with the output transistor; a short-circuit-fault detection circuit that detects a short circuit of the voltage-output terminal based on a voltage across a resistor connected in series to the first transistor; and a first output terminal that outputs a detection result of the short-circuit-fault detection circuit. The current limit is within a detection range of the short-circuit-fault detection circuit. The short-circuit-fault detection circuit detects a short circuit of the voltage-output terminal even while the current limit circuit limits the output current.

    Electronic field device with transceiver protecting circuit
    9.
    发明授权
    Electronic field device with transceiver protecting circuit 有权

    公开(公告)号：US11233392B2

    公开(公告)日：2022-01-25

    申请号：US16759586

    申请日：2018-09-17

    申请人： Endress+Hauser SE+Co. KG

    发明人： Armin Wernet ,  Michael Dötsch

    IPC分类号： H02H9/00 ,  H02H11/00 ,  G05F1/565 ,  G05F1/567 ,  H02H9/04 ,  G01D11/24 ,  G05F1/571 ,  G05F3/18

    摘要： The present disclosure relates to an apparatus for determining and/or monitoring at least one process variable of a medium in a containment, comprising a sensor unit and an electronics unit, wherein the electronics unit includes a transceiver unit and a transceiver protecting unit for limiting an input voltage of the transceiver unit to a first transceiver voltage value. According to the present disclosure, the transceiver protecting unit includes a first limiting unit and a transistor unit, the transistor unit connected in series with the transceiver unit, wherein the first limiting unit is connected in parallel with transceiver unit and to a control terminal of the transistor and is configured to control an input voltage for the control terminal of the transistor to a predeterminable control value such that the input voltage of the transceiver unit is limited to the first transceiver voltage value.