Apparatus and methods for determining memory device faults
    1.
    发明申请
    Apparatus and methods for determining memory device faults 有权
    用于确定存储器件故障的装置和方法

    公开(公告)号:US20070242538A1

    公开(公告)日:2007-10-18

    申请号:US11404667

    申请日:2006-04-14

    IPC分类号: G11C7/00

    摘要: A test circuit used for determining a fault in a memory device. The test circuit includes a read circuit configured to read memory cell contents in a memory device at a first time instant and second time instant. The test circuit includes a comparator that compares the contents at the first and second time instants. If the contents are different from one another, the comparator indicates that a fault has occurred. Test methods are also used to determine if a fault has occurred in a memory cell.

    摘要翻译: 用于确定存储器件中的故障的测试电路。 测试电路包括:读取电路,被配置为在第一时刻和第二时刻读取存储器件中的存储单元内容。 测试电路包括比较第一和第二时刻的内容的比较器。 如果内容不同,则比较器指示发生故障。 测试方法也用于确定存储器单元中是否发生故障。

    Apparatus and methods for determining memory device faults
    3.
    发明授权
    Apparatus and methods for determining memory device faults 有权
    用于确定存储器件故障的装置和方法

    公开(公告)号:US07548473B2

    公开(公告)日:2009-06-16

    申请号:US11404667

    申请日:2006-04-14

    IPC分类号: G11C7/00

    摘要: A test circuit used for determining a fault in a memory device. The test circuit includes a read circuit configured to read memory cell contents in a memory device at a first time instant and second time instant. The test circuit includes a comparator that compares the contents at the first and second time instants. If the contents are different from one another, the comparator indicates that a fault has occurred. Test methods are also used to determine if a fault has occurred in a memory cell.

    摘要翻译: 用于确定存储器件中的故障的测试电路。 测试电路包括:读取电路,被配置为在第一时刻和第二时刻读取存储器件中的存储单元内容。 测试电路包括比较第一和第二时刻的内容的比较器。 如果内容不同,则比较器指示发生故障。 测试方法也用于确定存储器单元中是否发生故障。