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公开(公告)号：US10044349B2
公开(公告)日：2018-08-07
申请号：US15585345
申请日：2017-05-03
申请人： Qorvo US, Inc.
发明人： Baker Scott , George Maxim , Hideya Oshima , Dirk Robert Walter Leipold , Eric K. Bolton , Daniel Charles Kerr
IPC分类号： H03K17/04 , H03K17/041 , H03K17/16
摘要： A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass an RF signal between a signal input and a signal output when the RF switching device is on. A second FET having a second control terminal coupled to an acceleration output is configured to shunt the RF switching device when the second FET is on. A third FET is coupled between the first control terminal and the signal input for controlling charge on a gate of the first FET. A third control terminal of the third FET is coupled to an acceleration input for controlling an on/off state of the third FET.
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公开(公告)号：US20170272066A1
公开(公告)日：2017-09-21
申请号：US15585345
申请日：2017-05-03
申请人： Qorvo US, Inc.
发明人： Baker Scott , George Maxim , Hideya Oshima , Dirk Robert Walter Leipold , Eric K. Bolton , Daniel Charles Kerr
IPC分类号： H03K17/041 , H03K17/16
CPC分类号： H03K17/04106 , H03K17/04123 , H03K17/161 , H03K17/693
摘要： A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass an RF signal between a signal input and a signal output when the RF switching device is on. A second FET having a second control terminal coupled to an acceleration output is configured to shunt the RF switching device when the second FET is on. A third FET is coupled between the first control terminal and the signal input for controlling charge on a gate of the first FET. A third control terminal of the third FET is coupled to an acceleration input for controlling an on/off state of the third FET.
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公开(公告)号：US20200382114A1
公开(公告)日：2020-12-03
申请号：US16893827
申请日：2020-06-05
申请人： Qorvo US, Inc.
摘要： A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N−1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−1 for switch cell 2 through switch cell N.
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公开(公告)号：US10715133B1
公开(公告)日：2020-07-14
申请号：US16426241
申请日：2019-05-30
申请人： Qorvo US, Inc.
摘要： A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N−1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−1 for switch cell 2 through switch cell N.
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公开(公告)号：US10608623B2
公开(公告)日：2020-03-31
申请号：US16402512
申请日：2019-05-03
申请人： Qorvo US, Inc.
发明人： Daniel Charles Kerr , Jinsung Choi , Baker Scott , George Maxim , Hideya Oshima
IPC分类号： H03K17/041 , H03K17/16 , H03K17/10 , H03K17/693 , H04B1/44
摘要： A transistor-based radio frequency (RF) switch that provides symmetric RF impedance is disclosed. The transistor-based RF switch includes an N number of main field-effect transistors (FETs) stacked in series between a first end node and a second end node. A first end-network is coupled between the first end node and a proximal gate node. The first end-network provides a first variable impedance that equalizes a drain-to-source voltage of the first main FET to within a predetermined percentage of a drain-to-source voltage of a second main FET of the N number of main FETs. A second end-network is coupled between the second end node and the distal gate node, wherein the second end-network provides a second variable impedance to equalize the drain-to-source voltage of an Nth main FET to within the predetermined percentage of the drain-to-source voltage of an N−1 main FET of the N number of main FETs.
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公开(公告)号：US20200007097A1
公开(公告)日：2020-01-02
申请号：US16022816
申请日：2018-06-29
申请人： Qorvo US, Inc.
摘要： A power amplifier system is disclosed. The power amplifier system includes a power amplifier having a first signal input and a first signal output and a main bias circuitry configured to provide a first portion of a first bias signal to the power amplifier through a first bias output coupled to the first signal input. Further included is peak bias circuitry that is configured to provide a second portion of the first bias signal to the power amplifier through a second bias output coupled to the first signal input, wherein the first portion of the first bias signal is greater than the second portion of the first bias signal over a first input power range and the second portion of the first bias signal is greater than the first portion of the first bias signal over a second input power range that is greater than the first input power range.
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公开(公告)号：US10447344B2
公开(公告)日：2019-10-15
申请号：US15401936
申请日：2017-01-09
申请人： Qorvo US, Inc.
发明人： Baker Scott , George Maxim , Dirk Robert Walter Leipold , Eric K. Bolton , Daniel Charles Kerr , Hideya Oshima
IPC分类号： H04B3/54 , H03K17/0412 , H03K17/693
摘要： Improved Radio Frequency (RF) switches are provided herein. According to one aspect, an RF switch comprises one or more stages. In one embodiment, each stage comprises a signal input terminal, a signal output terminal, a control input terminal, and a switching device having a first terminal connected to the signal input terminal, a second terminal connected to the signal output terminal, and a third terminal for controlling the on/off state of the switching device. Each stage includes a first resistor connected in series between the control input terminal and the third terminal, a first bypass switch for electrically bypassing the first resistor, and a second resistor connected in series between the signal input terminal and the signal output terminal. The first resistors form a first bias network, the second resistors form a second bias network, and the switching devices are connected in series.
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公开(公告)号：US10320379B2
公开(公告)日：2019-06-11
申请号：US15849074
申请日：2017-12-20
申请人： Qorvo US, Inc.
发明人： Daniel Charles Kerr , Jinsung Choi , Baker Scott , George Maxim , Hideya Oshima
IPC分类号： H03K17/16 , H04B1/44 , H03K17/693 , H03K17/10
摘要： Disclosed is a transistor-based switch having an N number of main field-effect transistors (FETs) stacked in series such that a first terminal of a first main FET of the N number of main FETs is coupled to a first end node and a second terminal of an Nth main FET of the N number of main FETs is coupled to a second end node, wherein N is a finite number greater than five. The transistor-based switch further includes a gate bias network having a plurality of gate resistors, wherein individual ones of the plurality of gate resistors are coupled to gate terminals of the N number of main FETs. A common gate resistor is coupled between a gate control input and a gate control node of the plurality of gate resistors, and a capacitor is coupled between the gate control node and a switch path node of the main FETs.
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公开(公告)号：US10998900B2
公开(公告)日：2021-05-04
申请号：US16893827
申请日：2020-06-05
申请人： Qorvo US, Inc.
摘要： A radio frequency switch having an N number of switch cells coupled in series is disclosed. Each of the switch cells includes a field-effect transistor (FET), wherein a source of switch cell 1 is coupled to a first port, a drain of switch cell N is coupled to a second port, and a drain of switch cell X is coupled to a source of switch cell X+1 for switch cell 1 through switch cell N. A first diode stack has a first anode coupled to the body of switch cell X and a first cathode coupled to a drain of switch cell X+1 for switch cell 1 through switch cell N−1, and a second diode stack has a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−1 for switch cell 2 through switch cell N.
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公开(公告)号：US10680565B2
公开(公告)日：2020-06-09
申请号：US16022816
申请日：2018-06-29
申请人： Qorvo US, Inc.
摘要： A power amplifier system is disclosed. The power amplifier system includes a power amplifier having a first signal input and a first signal output and a main bias circuitry configured to provide a first portion of a first bias signal to the power amplifier through a first bias output coupled to the first signal input. Further included is peak bias circuitry that is configured to provide a second portion of the first bias signal to the power amplifier through a second bias output coupled to the first signal input, wherein the first portion of the first bias signal is greater than the second portion of the first bias signal over a first input power range and the second portion of the first bias signal is greater than the first portion of the first bias signal over a second input power range that is greater than the first input power range.
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