公开(公告)号：US20150102509A1

公开(公告)日：2015-04-16

申请号：US14578330

申请日：2014-12-19

Applicant: Qualcomm Incorporated

Inventor： Brian M. HENDERSON ,  Shiqun GU

IPC: H01L25/18 ,  H01L25/065

CPC classification number: H01L21/50 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/525 ,  H01L24/17 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/73253 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/13099

Abstract: A semiconductor device includes a die coupled to a substrate, a first memory device coupled to a surface of the die opposite the substrate and a coupling device coupled between the surface of the die opposite the substrate and a second memory device such that the second memory device at least partially overlaps the first memory device. Also disclosed is method of mounting first and second memory devices on a die in an at least partially overlapping manner.

Abstract translation: 半导体器件包括耦合到衬底的管芯，耦合到与衬底相对的管芯的表面的第一存储器件和耦合在与衬底相对的管芯的表面之间的耦合器件和第二存储器件 至少部分地与第一存储器件重叠。 还公开了以至少部分重叠的方式将第一和第二存储器件安装在管芯上的方法。