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公开(公告)号：US09958442B2
公开(公告)日：2018-05-01
申请号：US13201181
申请日：2010-02-11
IPC分类号： G01N33/53 , G01N33/543
CPC分类号： G01N33/5438 , Y10T29/41
摘要： A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.
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2.发明申请公开(公告)号：US20120122736A1
公开(公告)日：2012-05-17
申请号：US13201181
申请日：2010-02-11
CPC分类号： G01N33/5438 , Y10T29/41
摘要： A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.
摘要翻译： 一种传感器，包括电耦合到III-V族半导体材料的电子电路，例如砷化铟（InAs）和与III-V族半导体材料接触的抗体。 传感器在抗体 - 抗原结合事件时产生半导体电性能的可测量的N变化。 电子设备可测量的电气特性可包括电阻率，电容，阻抗和电感。 使用本发明的传感器检测抗原的方法。 使用本发明的传感器检测分析物与刺激物的反应的方法。 传感器阵列包括本发明的多个传感器。
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公开(公告)号：US09970897B2
公开(公告)日：2018-05-15
申请号：US12999262
申请日：2009-06-16
IPC分类号： G01N27/414
CPC分类号： G01N27/4148 , G01N27/4145
摘要： A van der Pauw (VDP) sensor comprising an electronic circuit electrically coupled to a surface, the surface comprising a type III-V material, and the electronic circuit measuring a sheet resistivity of the surface using a VDP technique. The VDP sensor may further comprise a macromolecule, such as a porphyrin, an oligonucleotide, a protein, a polymer or a combination thereof in contact with the surface. The VDP sensors may be arranged in an array of similar or different sensors. An electronic circuit electrically coupled to a type III-V material having a two-dimensional electron gas, such as InAs or InN, the electronic circuit measuring an electrical property of the type III-V material having a two-dimensional electron gas.
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公开(公告)号：US20110199102A1
公开(公告)日：2011-08-18
申请号：US12999262
申请日：2009-06-16
CPC分类号： G01N27/4148 , G01N27/4145
摘要： A van der Pauw (VDP) sensor comprising an electronic circuit electrically coupled to a surface, the surface comprising a type III-V material, and the electronic circuit measuring a sheet resistivity of the surface using a VDP technique. The VDP sensor may further comprise a macromolecule, such as a porphyrin, an oligonucleotide, a protein, a polymer or a combination thereof in contact with the surface. The VDP sensors may be arranged in an array of similar or different sensors. An electronic circuit electrically coupled to a type III-V material having a two-dimensional electron gas, such as InAs or InN, the electronic circuit measuring an electrical property of the type III-V material having a two-dimensional electron gas.
摘要翻译： 一种范德堡（VDP）传感器，包括电耦合到表面的电子电路，该表面包括III-V族材料，电子电路使用VDP技术测量表面的电阻率。 VDP传感器还可以包含与表面接触的大分子，例如卟啉，寡核苷酸，蛋白质，聚合物或其组合。 VDP传感器可以布置在类似或不同传感器的阵列中。 电子电路电耦合到具有二维电子气体的诸如InAs或InN的III-V族材料，电子电路测量具有二维电子气的III-V族材料的电性能。
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公开(公告)号：USH2193H1
公开(公告)日：2007-07-03
申请号：US10047323
申请日：2002-01-14
IPC分类号： C30B23/00
摘要： A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C60, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.
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公开(公告)号：US6117697A
公开(公告)日：2000-09-12
申请号：US122611
申请日：1998-07-27
CPC分类号： H01L43/08
摘要： A method for making a magnetoresistive sensing device including depositing an ultrathin active film responsive to changes in magnetic field energy onto a compliant layer of periodic table group III-V semiconductor material on a semiconductor substrate wafer, the compliant layer being capable of retaining strain energy resulting from the layering semiconductor materials with different lattice constants. This method produces a battery operable ultrathin device highly sensitive to changes in magnetic field flux.
摘要翻译： 一种用于制造磁阻感测装置的方法，包括：响应于在半导体衬底晶片上的周期表III-V族半导体材料的柔性层上的磁场能量的变化而沉积超薄有源膜，所述柔性层能够保持应变能量， 来自具有不同晶格常数的分层半导体材料。 该方法产生对磁场通量变化高度敏感的电池可操作的超薄器件。
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