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1.发明授权CMOS APS shared amplifier pixel with symmetrical field effect transistor placement 有权具有对称场效应晶体管放置的CMOS APS共享放大器像素公开(公告)号：US07342213B2
公开(公告)日：2008-03-11
申请号：US11432573
申请日：2006-05-11
Applicant: R. Michael Guidash , Timothy J. Kenney
Inventor： R. Michael Guidash , Timothy J. Kenney
IPC: H01L27/00
CPC classification number: H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641
Abstract: An image sensor includes a plurality of photodetectors arranged in an array; and a plurality of transistors that are functionally shared by the photodetectors, wherein a distance of each photodetector to an adjacent transistor is substantially the same.
Abstract translation: 图像传感器包括排列成阵列的多个光电检测器; 以及由光电检测器功能共享的多个晶体管，其中每个光电检测器与相邻晶体管的距离基本相同。
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公开(公告)号：US20100136733A1
公开(公告)日：2010-06-03
申请号：US12699419
申请日：2010-02-03
Applicant: James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
Inventor： James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
IPC: H01L31/18
CPC classification number: H01L27/14609 , H01L27/14643 , H01L27/14689
Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.
Abstract translation: 具有双功能转移栅极器件和制造方法的CMOS有源像素传感器（APS）单元结构。 传输栅极器件包括形成在衬底上的电介质层和形成在包括第一导电类型掺杂区和邻接第二导电类型掺杂区的电介质层上的双功函数栅导体层。 传输门装置限定了由光敏装置累积的电荷被传送到扩散区的沟道区。 在双功函数栅极导体层顶部形成硅化物结构，用于电耦合第一和第二导电类型掺杂区域。 在一个实施例中，硅化物接触面积尺寸小于所述双功函数栅极导体层的面积尺寸。 硅化物带的存在防止了双极性行为允许栅极的一侧或另一侧浮动到不确定的电压。
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公开(公告)号：US07238926B2
公开(公告)日：2007-07-03
申请号：US11398514
申请日：2006-04-05
Applicant: R. Michael Guidash , Ravi Mruthyunjaya , Weize Xu
Inventor： R. Michael Guidash , Ravi Mruthyunjaya , Weize Xu
CPC classification number: H04N5/37457 , H04N5/365
Abstract: A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.
Abstract translation: 一种制作图像传感器的方法，所述方法包括以下步骤：提供多个像素，每个像素具有光电检测器; 提供在所述多个光电检测器之间共享的放大器; 提供与每个光电检测器相关联的传送门; 提供在所述多个光电检测器之间共享的电荷 - 电压转换区域; 确定每个转移栅极和电荷 - 电压转换区域之间的电容; 并且通过改变一个或多个像素内的物理结构来将电容修改为基本相同。
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公开(公告)号：US07675097B2
公开(公告)日：2010-03-09
申请号：US11565801
申请日：2006-12-01
Applicant: James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
Inventor： James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14643 , H01L27/14689
Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.
Abstract translation: 具有双功能转移栅极器件和制造方法的CMOS有源像素传感器（APS）单元结构。 传输栅极器件包括形成在衬底上的电介质层和形成在包括第一导电类型掺杂区和邻接第二导电类型掺杂区的电介质层上的双功函数栅导体层。 传输门装置限定了由光敏装置累积的电荷被传送到扩散区的沟道区。 在双功函数栅极导体层顶部形成硅化物结构，用于电耦合第一和第二导电类型掺杂区域。 在一个实施例中，硅化物接触面积尺寸小于所述双功函数栅极导体层的面积尺寸。 硅化物带的存在防止了双极性行为允许栅极的一侧或另一侧浮动到不确定的电压。
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公开(公告)号：US20080128767A1
公开(公告)日：2008-06-05
申请号：US11565801
申请日：2006-12-01
Applicant: James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
Inventor： James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
IPC: H01L27/146 , H01L31/18
CPC classification number: H01L27/14609 , H01L27/14643 , H01L27/14689
Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.
Abstract translation: 具有双功能转移栅极器件和制造方法的CMOS有源像素传感器（APS）单元结构。 传输栅极器件包括形成在衬底上的电介质层和形成在包括第一导电类型掺杂区和邻接第二导电类型掺杂区的电介质层上的双功函数栅导体层。 传输门装置限定了由光敏装置累积的电荷被传送到扩散区的沟道区。 在双功函数栅极导体层顶部形成硅化物结构，用于电耦合第一和第二导电类型掺杂区域。 在一个实施例中，硅化物接触面积尺寸小于所述双功函数栅极导体层的面积尺寸。 硅化物带的存在防止了双极性行为允许栅极的一侧或另一侧浮动到不确定的电压。
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Patent Agency Ranking
公开(公告)号：US08158453B2
公开(公告)日：2012-04-17
申请号：US12699419
申请日：2010-02-03
Applicant: James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
Inventor： James W. Adkisson , John J. Ellis-Monaghan , R. Michael Guidash , Mark D. Jaffe , Edward T. Nelson , Richard J. Rassel , Charles V. Stancampiano
IPC: H01L21/336
CPC classification number: H01L27/14609 , H01L27/14643 , H01L27/14689
Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.
Abstract translation: 具有双功能转移栅极器件和制造方法的CMOS有源像素传感器（APS）单元结构。 传输栅极器件包括形成在衬底上的电介质层和形成在包括第一导电类型掺杂区和邻接第二导电类型掺杂区的电介质层上的双功函数栅导体层。 传输门装置限定了由光敏装置累积的电荷被传送到扩散区的沟道区。 在双功函数栅极导体层顶部形成硅化物结构，用于电耦合第一和第二导电类型掺杂区域。 在一个实施例中，硅化物接触面积尺寸小于所述双功函数栅极导体层的面积尺寸。 硅化物带的存在防止了双极性行为允许栅极的一侧或另一侧浮动到不确定的电压。
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公开(公告)号：US07969469B2
公开(公告)日：2011-06-28
申请号：US11947980
申请日：2007-11-30
Applicant: R. Michael Guidash
Inventor： R. Michael Guidash
CPC classification number: H04N5/265 , H04N5/2258 , H04N5/272 , H04N5/335
Abstract: A primary integrated image sensor is operatively connected to one or more secondary image sensors. The primary integrated image sensor includes a pixel array integrated on a semiconductor substrate along with one or more of an image signal processing circuit, readout circuitry, a digital serial interface, storage, a timing circuit, an analog-to-digital converter, and a bi-directional digital input/output circuit. Each secondary image sensor can be implemented as a Complementary Metal Oxide Semiconductor (CMOS) or a Charge Coupled Device (CCD) image sensor and include a pixel array along with one or more of a readout circuitry, a digital serial interface, a timing circuit, an output circuit, and an optional analog-to-digital converter. Images captured by the primary integrated image sensor and each secondary image sensor are processed by the primary image sensor. Each secondary image sensor can also transmit physical and operational data to the primary integrated image sensor.
Abstract translation: 主集成图像传感器可操作地连接到一个或多个次级图像传感器。 主集成图像传感器包括集成在半导体衬底上的像素阵列以及图像信号处理电路，读出电路，数字串行接口，存储器，定时电路，模数转换器和 双向数字输入/输出电路。 每个次级图像传感器可以实现为互补金属氧化物半导体（CMOS）或电荷耦合器件（CCD）图像传感器，并且包括像素阵列以及读出电路，数字串行接口，定时电路中的一个或多个， 输出电路和可选的模数转换器。 由主要集成图像传感器和每个次级图像传感器捕获的图像由主图像传感器处理。 每个次级图像传感器还可以将物理和操作数据传送到主要集成图像传感器。
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公开(公告)号：US20090141146A1
公开(公告)日：2009-06-04
申请号：US11947980
申请日：2007-11-30
Applicant: R. Michael Guidash
Inventor： R. Michael Guidash
IPC: H04N5/76
CPC classification number: H04N5/265 , H04N5/2258 , H04N5/272 , H04N5/335
Abstract: A primary integrated image sensor is operatively connected to one or more secondary image sensors. The primary integrated image sensor includes a pixel array integrated on a semiconductor substrate along with one or more of an image signal processing circuit, readout circuitry, a digital serial interface, storage, a timing circuit, an analog-to-digital converter, and a bi-directional digital input/output circuit. Each secondary image sensor can be implemented as a Complementary Metal Oxide Semiconductor (CMOS) or a Charge Coupled Device (CCD) image sensor and include a pixel array along with one or more of a readout circuitry, a digital serial interface, a timing circuit, an output circuit, and an optional analog-to-digital converter. Images captured by the primary integrated image sensor and each secondary image sensor are processed by the primary image sensor. Each secondary image sensor can also transmit physical and operational data to the primary integrated image sensor.
Abstract translation: 主集成图像传感器可操作地连接到一个或多个次级图像传感器。 主集成图像传感器包括集成在半导体衬底上的像素阵列以及图像信号处理电路，读出电路，数字串行接口，存储器，定时电路，模数转换器和 双向数字输入/输出电路。 每个次级图像传感器可以实现为互补金属氧化物半导体（CMOS）或电荷耦合器件（CCD）图像传感器，并且包括像素阵列以及读出电路，数字串行接口，定时电路中的一个或多个， 输出电路和可选的模数转换器。 由主要集成图像传感器和每个次级图像传感器捕获的图像由主图像传感器处理。 每个次级图像传感器还可以将物理和操作数据传送到主要集成图像传感器。
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9.发明授权公开(公告)号：US07705900B2
公开(公告)日：2010-04-27
申请号：US11408640
申请日：2006-04-21
Applicant: R. Michael Guidash
Inventor： R. Michael Guidash
IPC: H04N3/14 , H01L27/00 , H01L31/062
CPC classification number: H01L27/14643 , H01L27/14641 , H04N5/347 , H04N5/3559 , H04N5/3745
Abstract: An image sensor includes a plurality of pixels, at least two pixels each having a photodetector; a charge-to-voltage conversion region; an input to an amplifier; and a switch for selectively connecting the charge-to-voltage conversion regions.
Abstract translation: 图像传感器包括多个像素，每个具有光电检测器的至少两个像素; 电荷电压转换区域; 放大器的输入; 以及用于选择性地连接充电电压转换区域的开关。
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公开(公告)号：US07674648B2
公开(公告)日：2010-03-09
申请号：US11689072
申请日：2007-03-21
Applicant: John T. Compton , R. Michael Guidash
Inventor： John T. Compton , R. Michael Guidash
IPC: H01L21/00
CPC classification number: H04N5/3559 , H04N5/35554 , H04N5/3745
Abstract: A method for reading out an image sensor, the method includes the steps of integrating charge in a photodetector with the photodetector at a first capacitance; reading the resulting signal level at a first time with the photodetector at the first capacitance; changing the photodetector capacitance to a second capacitance; and reading the signal level associated with the photodetector at the second capacitance.
Abstract translation: 一种用于读出图像传感器的方法，该方法包括以下步骤：将光电检测器中的电荷与第一电容的光电检测器进行积分; 在光电检测器处于第一电容的状态下首次读取所得到的信号电平; 将光电检测器电容改变为第二电容; 以及读取与第二电容相关的光电检测器的信号电平。
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