Abstract:
An avalanche diode which will oscillate to generate microwave powers in the frequency range of 2 to 16 gigahertz with efficiencies of up to at least 30 percent. The diode will also function as a microwave amplifier in the same frequency range. The diode includes a body of semiconductor material having two spaced apart regions and a third region between and contiguous to both of the other regions. The outer two regions are of low resistivity and of opposite conductivity type. The third intermediate region is of a conductivity type the same as one of the outer regions and forms an abrupt or hyperabrupt PN junction with the other of the outer regions. The third region is of a thickness of between 0.5 and 3 microns and a resistivity of between 0.5 and 10 ohm-cm.
Abstract:
A high power semiconductor device comprising a housing having an enclosed chamber therein and a plurality of semiconductor elements mounted in the chamber and electrically connected in series. The semiconductor elements are individually mounted in spaced relation on a plate of an electrically insulating material which is a good conductor of heat and are electrically connected between a metal body secured to one side of the plate and a metal cover secured to the other side of the plate.
Abstract:
A high efficiency mode avalanche diode oscillator is disclosed. The avalanche diode and a tuning capacitor are connected in parallel at a high microwave voltage point at one end of a resonant transmission line section electrically one-eighth wavelength long at the operating frequency of the oscillator, so as to match the complex impedance of the diode to a load impedance, and to provide the high efficiency mode of operation.