专利检索 ap:("RCA CORP") AND inv:"CHIANG Y" 第 1 页

1.

发明授权
Method of making semiconductor devices having thin active regions of the semiconductor material 失效
标题翻译：制造具有半导体材料的活性区域的半导体器件的方法

公开(公告)号：US3846198A

公开(公告)日：1974-11-05

申请号：US35632273

申请日：1973-05-02

申请人： RCA CORP

发明人： WEN C , CHIANG Y

IPC分类号： H01L21/00 , H01L21/60 , H01L23/36 , H01L27/00 , H01L7/50

CPC分类号： H01L24/26 , H01L21/00 , H01L23/36 , H01L24/83 , H01L27/00 , H01L2224/8319 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01084 , H01L2924/014 , H01L2924/12036 , H01L2924/14 , Y10S148/051 , Y10S148/085 , Y10S148/135 , H01L2924/00

摘要： 1. A METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF: (A) FORMING ON A SURFACE OF A SUBRATE OF SINGLE CRYSTALLINE SILICON A THIN BARRIER LAYER OF SINGLE CRYSTALLINE P TYPE CONDUCTIVITY SILICON WITH THE FREE CARRIER CONCENTRATION BEING GREATER THAN 5 X 10**19 CM.-3, (B) FORMING ON SAID BARRIER LAYER A REGION OF SINGLE CRYSTALLINE SILICON, SAID REGION BEING OF A CONDUCTIVITY TYPE OR TYPES REQUIRED BY THE SEMICONDUCTOR DEVICE BEING FORMED, AND (C) REMOVING SAID SUBSTRATE BY ETCHING WITH A SOLUTION OF POTASSIUM HYDROXIDE AND 1-PROPANOL.

2.

发明授权
Method of making a metal silicide-silicon schottky barrier 失效
标题翻译：制备金属硅化硅肖特基棒的方法

公开(公告)号：US3841904A

公开(公告)日：1974-10-15

申请号：US31400272

申请日：1972-12-11

申请人： RCA CORP

发明人： CHIANG Y

IPC分类号： C01B33/06 , H01L21/00 , H01L21/306 , H01L29/00 , H01L29/47 , H01L29/872 , H01C7/00 , B44D1/20

CPC分类号： H01L21/00 , H01L21/30604 , H01L29/00 , Y10S438/974

摘要： An iridium, platinum, or osmium silicide-silicon Schottky barrier is made by a novel method carried out at room temperature. First, an HF solution is applied to a cleaned surface of n-type silicon to remove any oxides thereon, and then a solution of HCl and a metal salt of iridium, platinum, or osmium is added to the HF solution to react with the silicon to form the metal silicide. An iridium silicide-silicon Schottky barrier has a barrier height of 0.93 + OR - 0.03 electron volt, one of the highest barrier heights reported to date.

摘要翻译： 通过在室温下进行的新方法制备铱，铂或硅化矽硅肖特基势垒。首先，将HF溶液施加到n型硅的清洁表面以除去其中的任何氧化物，然后将HCl和铱，铂或锇的金属盐溶液加入到HF溶液中以与硅反应以形成金属硅化物。铱硅化物硅肖特基势垒具有0.93 +/- 0.03电子伏特的势垒高度，迄今为止报道的最高阻挡高度之一。