公开(公告)号：US3676229A

公开(公告)日：1972-07-11

申请号：US3676229D

申请日：1971-01-26

Applicant: RCA CORP

Inventor： EINTHOVEN WILLEM GERARD ,  JETTER EVELYN SPETER ,  WHEATLEY CARL FRANKLIN JR

IPC: G01R31/26 ,  H01L21/66 ,  H01L29/10 ,  H01L7/44

CPC classification number: H01L22/14 ,  G01R31/2637 ,  G01R31/2644 ,  H01L22/00 ,  H01L22/20 ,  H01L29/1004 ,  Y10S148/085 ,  Y10S148/162

Abstract: A SEMICONDUCTOR WAFER HAS A UNIFORMLY THICK COLLECTOR LAYER THEREIN WITH A UNIFORMLY THICK BASE LAYER ADJACENT THE COLLECTOR LAYER. A PLURALITY OF EMITTER REGIONS ARE DIFFUSED INTO THE BASE LAYER FROM THE SURFACE. DURING EMITTER DIFFUSION, AN ANNULAR REGION OF THE SAME CONDUCTIVITY AS THE EMITTER REGIONS IS ALSO DIFFUSED INTO THE BASE LAYER TO SURROUND A PORTION OF THE BASE LAYER AT THE SURFACE. THE SHEET RESISTIVITY OF THE BASE LAYER BETWEEN THE ANNULAR REGION AND THE COLLECTOR LAYER IS DETERMINED, AND IF BELOW A DESIRED MINMUM, THE EMITTER AND ANNULAR REGIONS ARE FURTHER DIFFUSED.

公开(公告)号：US3664894A

公开(公告)日：1972-05-23

申请号：US3664894D

申请日：1970-02-24

Applicant: RCA CORP

Inventor： EINTHOVEN WILLEM GERARD ,  DONNELL HOWARD KENNETH

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/331 ,  H01L21/78 ,  H01L29/00 ,  H01L7/44

CPC classification number: H01L21/78 ,  H01L21/2252 ,  H01L29/00 ,  Y10S148/028 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/151

Abstract: A body of semiconductor material having first and second opposed faces, and containing a region of N type conductivity and a region of P type conductivity separated by a P-N junction. The N type region contains a central portion extending inward from one face partially through the body toward the second face, and a peripheral portion extending completely through the body with its resistivity increasing toward the second face relative to the remainder of the N type region adjacent the P-N junction. The peripheral portion encloses the P type region and extends the P-N junction to the second face where it has the least chance for voltage breakdown.

Abstract translation: 具有第一和第二相对面的半导体材料体，并且包含N型导电性区域和由P-N结分离的P型电导率区域。 N型区域包含从一个面部分地穿过本体朝向第二面向内延伸的中心部分，以及完全延伸穿过本体的周边部分，其电阻率相对于邻近N型区域的其余部分朝向第二面增加。 PN结。 外围部分包围P型区域，并且将P-N结延伸到第二面，其中电极击穿的机会最小。

公开(公告)号：US3617821A

公开(公告)日：1971-11-02

申请号：US3617821D

申请日：1970-09-17

Applicant: RCA CORP

Inventor： EINTHOVEN WILLEM GERARD

IPC: H01L21/60 ,  H01L23/36 ,  H01L29/00 ,  H01L1/12

CPC classification number: H01L24/32 ,  H01L23/36 ,  H01L24/83 ,  H01L29/00 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/00

Abstract: A high-voltage transistor is formed in a semiconductor body having two opposed major surfaces. The transistor has emitter, base, and collector regions, with the emitter-base junction extending to a first one of the surfaces, and with the collector region extending to the second surface. A nickel layer is disposed on the second surface, and a layer of a thermally conductive metal of about the same thickness as the semiconductor body, or greater, is integrally joined to the nickel layer.