Abstract:
A semiconductor current source adapted for integrated circuit fabrication. A first transistor and a second diode-connected transistor have their base-emitter circuits coupled in parallel. A current-determining resistor is connected between the emitters of the transistors. The effective base-emitter junction area of the diode-connected transistor is greater than that of the first transistor. The collectors of the first and second transistors are coupled to feedback circuitry which tends to maintain their collector currents substantially equal despite the difference in device areas. A difference in base-emitter voltage of the two transistors appears across the emitter resistor and determines the operating current level.
Abstract:
A sample and hold circuit using a first and second operational transconductance amplifier with a voltage storing device connected in circuit between the first and second amplifiers. A sample of the amplitude level of an input signal is stored in the storage device at predetermined times when the first amplifier is rendered operative. The sampled level is provided at the circuit output terminal at other predetermined times when the second amplifier is rendered operative.
Abstract:
A differential amplifier comprising a pair of transistors of one conductivity type has an active load circuit comprising a second pair of transistors of the opposite conductivity type, one connected in series with each transistor of the first pair. A third pair of transistors of the opposite conductivity type have their emitter electrodes connected in common to the base electrodes of the second pair, and their base electrodes individually connected to the collector electrodes of the second pair. The active load varies its conductivity as a function of common mode currents while developing a substantially constant voltage drop. Differential signal currents develop significant voltage drops which are simultaneously coupled by the third pair of transistors to an output load circuit.
Abstract:
A unidirectional conductive device is coupled from a base terminal to a collector terminal of a horizontal deflection output transistor in a television receiver and poled in a direction to prevent the transistor from saturating when it is driven into its conductive state during a portion of each deflection cycle. Biasing means is coupled to the diode to preselect the desired operating voltage of the transistor during its conduction period.
Abstract:
A SEMICONDUCTOR WAFER HAS A UNIFORMLY THICK COLLECTOR LAYER THEREIN WITH A UNIFORMLY THICK BASE LAYER ADJACENT THE COLLECTOR LAYER. A PLURALITY OF EMITTER REGIONS ARE DIFFUSED INTO THE BASE LAYER FROM THE SURFACE. DURING EMITTER DIFFUSION, AN ANNULAR REGION OF THE SAME CONDUCTIVITY AS THE EMITTER REGIONS IS ALSO DIFFUSED INTO THE BASE LAYER TO SURROUND A PORTION OF THE BASE LAYER AT THE SURFACE. THE SHEET RESISTIVITY OF THE BASE LAYER BETWEEN THE ANNULAR REGION AND THE COLLECTOR LAYER IS DETERMINED, AND IF BELOW A DESIRED MINMUM, THE EMITTER AND ANNULAR REGIONS ARE FURTHER DIFFUSED.
Abstract:
A means for baising a complementary Class B transistor amplifier which has the capability of maintaining the amplifier at a minimum distortion operating point over large ambient temperature variations.
Abstract:
An integrated circuit phase splitter is direct-current coupled to a load circuit. The phase splitter includes a pair of transistors connected respectively in common emitter and base configurations. A signal input circuit is coupled to the emitter electrode of the common base transistor and to the base electrode of the common emitter transistor. Biasing means, including a pair of forward biased diodes, are provided in the base circuit of the common base transistor for establishing the quiescent current of that transistor as a function of the diode current. Another diode which is connected in series with the common base transistor is also connected between the input electrodes of the common emitter transistor to establish the common emitter transistor current equal to that of the common base transistor.