公开(公告)号：US3846165A

公开(公告)日：1974-11-05

申请号：US28227372

申请日：1972-08-21

Applicant: RCA CORP

Inventor： ETTENBERG M ,  GILBERT S

IPC: C23C14/54 ,  G02B1/11 ,  H01L33/44 ,  H01S5/028 ,  H01L7/00

CPC classification number: H01L33/44 ,  C23C14/547 ,  G02B1/113 ,  H01S5/028

Abstract: 1.IN A METHOD OF APPLYING AN ANTI-REFLECTIVE COATING WHEREIN THE IMPROVEMENT COMPRISES THE STEPS OF COATING AN END SURFACE OF A SEMICONDUCTOR LASER WITH AN ANTI-REFLECTIVE MATERIAL IN A MANNER SO AS TO PROGRESSIVELY INCREASE THE THICKNESS OF THE LAYER OF THE MATERIAL,

MEASURING THE RADIANT ENERGY OUTPUT OF THE LASER DURING THE COATING AS THE THICKNESS OF THE COATING UNCREASE, AND STOPPING THE COATING WHEN A DESIRED OUTPUT IS ACHIEVED.

公开(公告)号：US3767481A

公开(公告)日：1973-10-23

申请号：US3767481D

申请日：1972-04-07

Applicant: RCA CORP

Inventor： ETTENBERG M ,  CANNULI V

IPC: C30B19/06 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063

Abstract: A furnace boat having a plurality of spaced deposition solution containing wells in its upper surface with each well having a recess in its bottom surface. A slide extends through the boat so as to extend across each of the wells and over the recesses in the wells. The slide has a recess in its upper surface and an opening therethrough adjacent to but spaced from the recess. A plurality of epitaxial layers can be deposited on a substrate in succession by placing a separate source body of a semiconductor material in each well recess and a substrate in the slide recess. The deposition solutions are brought into contact with the respective source bodies through the opening in the slide to exactly saturate the deposition solutions with the semiconductor material and the substrate is then brought into contact with the exactly saturated solutions in succession to deposit the epitaxial layers.

Abstract translation: 一种炉船，其具有多个间隔开的沉积溶液，其在其上表面中包含孔，每个井在其底表面中具有凹部。 滑块延伸穿过船，以便延伸穿过井中的每个井和井中的凹槽。 滑动件在其上表面具有凹部，并且与凹部相邻但与凹部间隔开的开口。 多个外延层可以通过将每个阱凹槽中的半导体材料的独立源体和滑动凹槽中的衬底放置在衬底上来连续沉积。 沉积溶液通过滑块中的开口与相应的源体接触，以使半导体材料精确地饱和沉积溶液，然后使衬底与准确饱和的溶液接触以沉积外延层。

公开(公告)号：US3821039A

公开(公告)日：1974-06-28

申请号：US34391173

申请日：1973-03-22

Applicant: RCA CORP

Inventor： ETTENBERG M

IPC: H01L33/00 ,  C30B19/12 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/12 ,  Y10S117/913 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/138 ,  Y10S438/964

Abstract: In epitaxially depositing a layer of a single crystalline semiconductor material on a substrate by liquid phase epitaxy where there is a relatively large lattice mismatch between the semiconductor material and the material of the substrate, the semiconductor layer is deposited on a roughened surface of the substrate.

公开(公告)号：US3741825A

公开(公告)日：1973-06-26

申请号：US3741825D

申请日：1971-07-08

Applicant: RCA CORP

Inventor： LOCKWOOD H ,  ETTENBERG M

IPC: C30B19/06 ,  H01L21/00 ,  H01L7/38

CPC classification number: C30B19/063 ,  H01L21/00

Abstract: ONE OR MORE EPITAXIAL LAYERS OF A SEMICONDUCTOR MATERIAL ARE DISPOSED ON A SUBSTRATE BY PROVIDING FOR EACH EPITAXIAL LAYER TO BE DEPOSITED A SEPARATE SOLUTION OF A SEMICONDUCTOR MATERIAL DISSOLVED IN A MOLTEN METAL SOLVENT WITH EACH SOLUTION BEING UNSATURATED WITH THE SEMICONDUCTOR MATERIAL, A BODY OF THE SEMICONDUCTOR MATERIAL IS BROUGHT INTO CONTACT WITH THE SOLUTION AND SOME OF THE BODY IS DISSOLVED IN THE SOLUTION SO AS TO EXACTLY SATURATE THE SOLUTION. THE BODY IS THEN REMOVED FROM THE EXA BROUGHT INTO CONTACT WITH THE SOLUTION AND THE SUBSTRATE COOLED TO DEPOSIT THE EPITAXIAL LAYER ON THE SUBSTRATE, TO DEPOSIT A PLURALITY OF EPITAXIAL LAYERS ON THE SUBSTRATE, THE SUBSTRATE IS SUCCESSIVELY BROUGHT INTO CONTACT WITH EACH SOLUTION WITH THE BODY OF SEMICONDUCTOR MATERIAL PRECEDING THE SUBSTRATE INTO EACH SOLUTION SO THAT EACH SOLUTION IS EXACTLY SATURATED WITH THE SEMICONDUCTOR MATERIAL WHEN THE SUBSTRATE IS BROUGHT INTO THE SOLUTION.