公开(公告)号：US09721810B2

公开(公告)日：2017-08-01

申请号：US13322403

申请日：2011-10-28

Applicant: Feng Liu ,  Gerald Stringfellow ,  Junyi Zhu

Inventor： Feng Liu ,  Gerald Stringfellow ,  Junyi Zhu

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02

CPC classification number: H01L21/0262 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  Y10S117/913

Abstract: Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

公开(公告)号：US20120021173A1

公开(公告)日：2012-01-26

申请号：US13173646

申请日：2011-06-30

Applicant: Hiroyuki SHIMADA

Inventor： Hiroyuki SHIMADA

IPC: B32B3/24 ,  C30B25/04

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/02639 ,  H01L21/0265 ,  Y10S117/913 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24612

Abstract: In a base material with a single-crystal silicon carbide film according to an embodiment of the invention, a plurality of recessed portions is formed on the surface of a silicon substrate, an insulating film including silicon oxide is formed across the surface of the silicon substrate including the inner surfaces of the recessed portions, the top surfaces of side wall portions of recessed portions of the insulating film form flat surfaces, a single-crystal silicon carbide film is joined on the flat surfaces, and the recessed portions below the single-crystal silicon carbide film form holes.

Abstract translation: 在根据本发明的实施方案的具有单晶碳化硅膜的基材中，在硅衬底的表面上形成多个凹部，在硅衬底的表面上形成包括氧化硅的绝缘膜 包括凹部的内表面，绝缘膜的凹部的侧壁部的顶面形成平坦面，在平坦面上接合单晶碳化硅膜，并且单晶的下方的凹部 碳化硅膜形成孔。

公开(公告)号：US06656271B2

公开(公告)日：2003-12-02

申请号：US09453539

申请日：1999-12-03

Applicant: Takao Yonehara ,  Kunio Watanabe ,  Tetsuya Shimada ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi

Inventor： Takao Yonehara ,  Kunio Watanabe ,  Tetsuya Shimada ,  Kazuaki Ohmi ,  Kiyofumi Sakaguchi

IPC: C30B2518

CPC classification number: H01L21/76251 ,  H01L21/76259 ,  Y10S117/913

Abstract: A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members.

Abstract translation: 一种半导体晶片的制造方法，其具有优异的批量生产和再现性的适用性。 该方法包括以下步骤：在半导体衬底上制备具有单晶半导体层的第一构件，其间分隔层以半导体晶片为原料，将单晶半导体层转移到第二构件上，该第二构件包括半导体晶片 通过分离层分离单晶半导体层，并且在转印步骤之后使半导体衬底的表面平滑，以便用作除了形成第一和第二构件之外的目的的半导体晶片。

公开(公告)号：US6096129A

公开(公告)日：2000-08-01

申请号：US60555

申请日：1998-04-15

Applicant: Hirohisa Saito ,  Takashi Tsuno ,  Takahiro Imai ,  Yoshiaki Kumazawa

Inventor： Hirohisa Saito ,  Takashi Tsuno ,  Takahiro Imai ,  Yoshiaki Kumazawa

IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205 ,  C30B23/04

CPC classification number: C30B25/02 ,  C30B25/00 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/902 ,  Y10S117/913

Abstract: An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.

Abstract translation: 由具有主要表面和由低折射率平面组成的侧表面的平板制备初始单晶金刚石基材。 然后，将单晶金刚石同轴异质气相沉积在单晶金刚石基材上，并以特定的方式对所得金刚石材料进行切割和抛光，以提供连续的基材，再次生长单晶金刚石，从而形成 具有大面积的单晶金刚石。 用于单晶金刚石基材的保持器由几乎不与碳形成化合物的材料组成或涂覆。 可以在基材的表面上稳定地形成单晶金刚石。 因此，可以使用等离子体CVD或热丝法在更短的时间内稳定地制造具有大面积的高质量的单晶金刚石。

公开(公告)号：US5741360A

公开(公告)日：1998-04-21

申请号：US514229

申请日：1995-08-11

Applicant: Shigeo Goto ,  Yasuhiko Nomura ,  Yoshitaka Morishita ,  Seikoh Yoshida ,  Masahiro Sasaki

Inventor： Shigeo Goto ,  Yasuhiko Nomura ,  Yoshitaka Morishita ,  Seikoh Yoshida ,  Masahiro Sasaki

IPC: C30B25/02 ,  H01L21/20 ,  C30B23/04

CPC classification number: H01L21/02463 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  Y10S117/913

Abstract: In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.

Abstract translation: 在选择性地生长由镓和砷构成的化合物半导体层的晶体的方法中，通过使用金属镓和反应性气体如三甲基氨基胂的组合，在衬底上选择性地进行选择性生长，所述反应性气体包括 由至少一种胺指定的金属砷化合物。 该组合可以包括有机金属镓，例如三甲基镓，三乙基镓，而不是金属镓。 这种组合用于仅将化合物半导体层选择性地沉积在未被掩模覆盖的暴露部分上。 任何其它化合物半导体层可以选择性地沉积在暴露部分上。 暴露部分可以由GaAs，AlGaAs或InGaAs组成。

公开(公告)号：US5632812A

公开(公告)日：1997-05-27

申请号：US466777

申请日：1995-06-06

Applicant: Keiji Hirabayashi

Inventor： Keiji Hirabayashi

IPC: H01L21/20 ,  C30B25/02 ,  H01L21/04 ,  H01L21/329 ,  H01L23/373 ,  H01L29/16 ,  H01L29/165 ,  H01L29/80 ,  H01L31/103 ,  H01L33/00 ,  H01L33/34 ,  C30B29/04

CPC classification number: H01L29/1602 ,  C30B25/02 ,  C30B29/04 ,  H01L29/165 ,  H01L29/6603 ,  H01L29/66045 ,  H01L29/66136 ,  H01L31/103 ,  H01L33/0054 ,  H01L33/34 ,  Y10S117/913

Abstract: A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) of the diamond crystal in direction parallel to the face of the substrate ranging from 1/4 to 1/1000 and an upper face of the diamond crystal making an angle of from substantially 0.degree. to 10.degree. to the face of the substrate, and a semiconductor layer and an electrode layer provided on the diamond crystal, wherein the diamond crystal serves as a heat-radiating layer.

Abstract translation: 由形成在基板上的金刚石晶体构成的金刚石电子器件包括金刚石晶体，其具有与基板的表面大致垂直的方向上的金刚石晶体的长度（h）的比率（h / L）与长度（L）的长度 金刚石晶体平行于衬底的方向从+ E，fra 1/4 + EE至+ E，fra 1/1000 + EE和金刚石晶体的上表面形成大致0°至 10°与衬底的表面，以及设置在金刚石晶体上的半导体层和电极层，其中金刚石晶体用作散热层。

公开(公告)号：US5363800A

公开(公告)日：1994-11-15

申请号：US973505

申请日：1992-11-09

Applicant: David J. Larkin ,  Powell, J. Anthony

Inventor： David J. Larkin ,  Powell, J. Anthony

IPC: H01L21/36 ,  H01L21/365 ,  H01L21/306 ,  H01L21/20

CPC classification number: H01L21/02529 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S117/913 ,  Y10S148/148 ,  Y10S148/168 ,  Y10S438/931

Abstract: This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafer. In particular, 3C-SiC and 6H-SiC films can be produced within selected areas of the same 6H-SiC wafer.

Abstract translation: 本发明是一种用于在具有低倾角的邻近（0001）SiC晶片上SiC多型体的单晶半导体器件质量膜的受控生长的方法。 同质外延和异质外延SiC薄膜均可在同一晶圆上制造。 特别地，可以在相同6H-SiC晶片的选定区域内制造3C-SiC和6H-SiC膜。

公开(公告)号：US5362682A

公开(公告)日：1994-11-08

申请号：US31536

申请日：1993-03-15

Applicant: Carl O. Bozler ,  John C.C. Fan ,  Robert W. McClelland

Inventor： Carl O. Bozler ,  John C.C. Fan ,  Robert W. McClelland

IPC: C30B25/04 ,  C30B33/00 ,  H01L21/20 ,  H01L25/04 ,  H01L31/0687 ,  H01L31/18 ,  H01S5/02 ,  C30B25/22

CPC classification number: H01L31/0687 ,  C30B25/04 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/2007 ,  H01L31/043 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/184 ,  H01L2924/0002 ,  H01S2304/12 ,  H01S5/0207 ,  H01S5/0217 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/913 ,  Y10S117/915 ,  Y10S148/023 ,  Y10S148/103 ,  Y10S148/105

Abstract: A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

Abstract translation: 公开了一种制造结晶材料片的方法，以及采用这种片材的装置。 在该方法中，在衬底上形成生长掩模，并且在通过掩模暴露的衬底的区域上生长晶体材料，并且在掩模的表面上横向地生长结晶材料片。 任选地将该片分离，使得可以重复使用基底。 该方法在形成用于固态器件的晶体半导体材料片中是特别重要的。

公开(公告)号：US4999313A

公开(公告)日：1991-03-12

申请号：US528916

申请日：1990-05-29

Applicant: Shiro Arikawa ,  Takao Yonehara

Inventor： Shiro Arikawa ,  Takao Yonehara

IPC: H01L21/20 ,  H01L21/761 ,  H01L21/762

CPC classification number: H01L21/02381 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/761 ,  H01L21/762 ,  Y10S117/913 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S257/928

Abstract: There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

公开(公告)号：US4935385A

公开(公告)日：1990-06-19

申请号：US223036

申请日：1988-07-22

Applicant: David K. Biegelsen

Inventor： David K. Biegelsen

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02381 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02469 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02546 ,  Y10S117/913 ,  Y10S148/025 ,  Y10S148/097 ,  Y10S148/149 ,  Y10S148/154 ,  Y10S438/933

Abstract: Intermediate buffer films having a low plastic deformation threshold are provided for absorbing defects due to lattice mismatch and/or thermal coefficient of expansion mismatch between a substrate or layer support and an overlayer while concurrently providing a good template for subsequent crystalline growth at the overlayer. This is accomplished for diamond cubic structure substrates, such as Si or Ge or Si on sapphire or crystalline Si on glass, upon which are to be deposited lattice mismatch overlayers, such as, GaAs or ZnSe. Also, zinc blend type substrates, such as GaAs or InP may be employed with such intermediate buffer films. A characteristic of these intermediate buffer films is a substantially lower plastic deformation threshold compared to either the substrate support or the overlayer to be grown heteroepitaxially thereon. In particular, such high plastic deformable compound materials found suitable for such an intermediate buffer film are cubic III-V, II-VI or a I-VII zinc blend compound materials, respectively and specifically, (Zn.sub.X Cd.sub.Y Hg.sub.1-X-Y)(S.sub.A Se.sub.B Te.sub.1-A-B) and Cu(Cl.sub.X Br.sub.Y I.sub.1-X-Y) wherein X or Y respectively range between 0 and 1 such that X+ Y.ltoreq.1 and A and B respectively range between 0 and 1 such that A+B.ltoreq.1. Particular examples are GaAs, ZnSe, ZnS.sub.x Se.sub.1-x, CdS.sub.x Se.sub.1-x, HgS.sub.x Se.sub.1-x, CuCl, CuBr or CuI, et al.

Abstract translation: 提供具有低塑性变形阈值的中间缓冲膜用于吸收由于晶格失配和/或基底或层载体与覆盖层之间的膨胀失配的热系数而引起的缺陷，同时为覆盖层上随后的晶体生长同时提供良好的模板。 这对于金刚石立方结构衬底（例如蓝宝石上的Si或Ge或玻璃上的晶体Si），其上将沉积的晶格失配覆盖层（例如GaAs或ZnSe）而言是完成的。 此外，可以使用诸如GaAs或InP的锌共混型衬底与这种中间缓冲膜。 与衬底支撑体或异质外延生长的覆盖层相比，这些中间缓冲膜的特征是相当低的塑性变形阈值。 特别地，适用于这种中间缓冲膜的这种高塑性可变形化合物材料分别是立方体III-V，II-VI或I-VII锌混合物，分别具体地（ZnXCdYHg1-XY）（SASeBTe1-AB） 和Cu（ClXBrYI1-XY），其中X或Y分别在0和1之间变化，使得X + Y 1和A和B分别在0和1之间变化，使得A + B <1。 具体实例是GaAs，ZnSe，ZnSxSe1-x，CdSxSe1-x，HgSxSe1-x，CuCl，CuBr或CuI等。