公开(公告)号：US3929525A

公开(公告)日：1975-12-30

申请号：US47785074

申请日：1974-06-10

Applicant: RCA CORP

Inventor： HAWRYLO FRANK ZYGMUNT

IPC: C30B19/06 ,  H01L21/208 ,  H01L21/285 ,  H01L29/45 ,  H01L7/38

CPC classification number: H01L21/28575 ,  C30B19/061 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/452 ,  Y10S148/02 ,  Y10S148/072 ,  Y10S148/107

Abstract: A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.

Abstract translation: 砷化铟镓合金的接触与电阻率为1欧姆 - 厘米或更大的n型或p型单晶砷化镓体形成欧姆接触。 形成接触的方法利用低温范围。 这种低温度范围减少了表面分离的量，有助于防止砷化镓体的污染。

公开(公告)号：US3692593A

公开(公告)日：1972-09-19

申请号：US3692593D

申请日：1971-06-18

Applicant: RCA CORP

Inventor： HAWRYLO FRANK ZYGMUNT ,  KRESSEL HENRY

IPC: C30B19/00 ,  H01L21/208 ,  H01L21/306 ,  H01L33/00 ,  H01L7/38

CPC classification number: C30B19/00 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/30612 ,  H01L33/0062

Abstract: AN EPITAXIAL LAYER OF SINGLE CRYSTALLINE GALLIUM ARSENIDE OR ALUMINUM GALLIUM ARSENIDE HAVING A LOW CONCENTRATION OF ALUMINUM IS DEPOSITED ON A BODY OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL BY LIQUID PHASE EPITAXY. AN ADDITIONAL LAYER OF SINGLE CRYSTALLINE ALUMINUM GALLIUM ARSENIDE HAVING A RELATIVELY HIGH CONCENTRATION OF ALUMINUM IS DEPOSITED BY LIQUID PHASE EPITAXY ON THE EPITAXIAL LAYER. THE ADDITIONAL LAYER IS THEN COMPLETELY ETCHED AWAY BY AN ETCHANT WHICH DOES NOT ATTACK THE MATERIAL OF THE EPITAXIAL LAYER, SUCH AS BOILING HYDROCHLORIC ACID, TO EXPOSE THE ENTIRE SURFACE OF THE EPITAXIAL LAYER AND PROVIDE THE EPITAXIAL LAYER WITH A SMOOTH, FLAT SURFACE.