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公开(公告)号：US3560275A
公开(公告)日：1971-02-02
申请号：US3560275D
申请日：1968-11-08
Applicant: RCA CORP
Inventor： KRESSEL HENRY , HAWRYLO FRANK Z
CPC classification number: C30B19/061 , C30B19/08 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L33/00 , Y10S148/002 , Y10S148/107 , Y10S438/915
Abstract: A PN JUNCTION IS FORMED IN A SOLUTION GROWN EPITAXIAL LAYER CONSISTING OF A MIXED III-V COMPOUND SEMICONDUCTIVE MATERIAL BY UTILIZING A SINGLE AMPHOTERIC CONDUCTIVITY MODIFIER IN THE SOLUTION, AND VARYING THE TEMPERATURE OF THE SOLUTION DURING THE DEPOSITION OF THE EPITAXIAL LAYER. THE SEMICONDUCTIVE MATERIAL HAS THE COMPOSITION BAALBGACINDNEPFASGSBH, WHEREIN EACH OF SUBSCRIPTS, A, B, C, D, E, F, G, H RANGES FROM 0 TO 1, AND A+B+C+D=1, AND E+F+G+H=1. THE AMPHOTERIC CONDUCTIVITY MODIFIER IS SILICON OR GFERMANIUM, AND THE ADDITION OF THE AMPHOTERIC MODIFIER TO THE SOLUTION SHORTLY BEFORE THE DEPOSITION OF THE EPITAXIAL LAYER IS ESPECIALLY EFFICACIOUS. ALSO DESCRIBED IS THE FABRICATION OF AN IMPROVED ELECTROLUMINESCENT DIODE FROM A SUB-CLASS OF THE MIXED III-V COMPOUND MATERIALS COMPRISING TWO MEMBERS OF THE GROUP CONSISTING OF BORON, ALULMINUM, GALLIUM AND INDIUM, AND ONE MEMBER OF THE GROUP CONSISTING OF NITROGEN, PHOSPHORUS, ARSENIC AND ANTIMONY.
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公开(公告)号：US3692593A
公开(公告)日：1972-09-19
申请号：US3692593D
申请日：1971-06-18
Applicant: RCA CORP
Inventor： HAWRYLO FRANK ZYGMUNT , KRESSEL HENRY
IPC: C30B19/00 , H01L21/208 , H01L21/306 , H01L33/00 , H01L7/38
CPC classification number: C30B19/00 , H01L21/02463 , H01L21/02546 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L21/30612 , H01L33/0062
Abstract: AN EPITAXIAL LAYER OF SINGLE CRYSTALLINE GALLIUM ARSENIDE OR ALUMINUM GALLIUM ARSENIDE HAVING A LOW CONCENTRATION OF ALUMINUM IS DEPOSITED ON A BODY OF SINGLE CRYSTALLINE SEMICONDUCTOR MATERIAL BY LIQUID PHASE EPITAXY. AN ADDITIONAL LAYER OF SINGLE CRYSTALLINE ALUMINUM GALLIUM ARSENIDE HAVING A RELATIVELY HIGH CONCENTRATION OF ALUMINUM IS DEPOSITED BY LIQUID PHASE EPITAXY ON THE EPITAXIAL LAYER. THE ADDITIONAL LAYER IS THEN COMPLETELY ETCHED AWAY BY AN ETCHANT WHICH DOES NOT ATTACK THE MATERIAL OF THE EPITAXIAL LAYER, SUCH AS BOILING HYDROCHLORIC ACID, TO EXPOSE THE ENTIRE SURFACE OF THE EPITAXIAL LAYER AND PROVIDE THE EPITAXIAL LAYER WITH A SMOOTH, FLAT SURFACE.
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Patent Agency Ranking
公开(公告)号：US3914136A
公开(公告)日：1975-10-21
申请号：US30975672
申请日：1972-11-27
Applicant: RCA CORP
Inventor： KRESSEL HENRY
CPC classification number: H01J1/34 , H01J9/12 , H01J2201/3423 , Y10S148/065 , Y10S148/067 , Y10S148/072 , Y10S148/107 , Y10S148/12
Abstract: A transmission photocathode device of the negative-electronaffinity type is disclosed. The device comprises epitaxially grown P type semiconductor layers and an alkali metal or alkali metal-oxygen work-function-reducing activation layer. Also disclosed is a novel method for making a negative-electronaffinity transmission photocathode device. The method enables a photocathode device to be made by the serial epitaxial growth of p type layers of a II-VI or III-V semiconductor on a semiconductor substrate. The method provides for a virtually perfect lattice match between the semiconductor layers thereby increasing the efficiency of the photocathode by eliminating lattice defects which would otherwise exist at the interface between the transmitting material and the absorbing material.
Abstract translation: 公开了一种负电子亲和型透射型光电阴极器件。 该装置包括外延生长的P型半导体层和碱金属或碱金属 - 氧功能减少活化层。
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公开(公告)号：US3667007A
公开(公告)日：1972-05-30
申请号：US3667007D
申请日：1970-02-25
Applicant: RCA CORP
Inventor： KRESSEL HENRY , PANKOVE JACQUES ISAAC
CPC classification number: H01J1/308
Abstract: An electron emitter comprising a body of a semiconductor material which is adapted to generate light therein when properly biased but which is a poor absorber of the generated light. On a surface of the body is a thin region of a semiconductor material which is a good absorber of the generated light and which has an index of refraction which substantially matches the index of refraction of the material of the body. The thin semiconductor material region is adapted to absorb the light from the body and convert the light into free electrons. On the surface of the semiconductor material layer is a thin film of an electropositive work function reducing material which is adapted to emit the electrons formed in the semiconductor material layer.
Abstract translation: 一种电子发射器，包括半导体材料的主体，其适于在适当偏置时产生光，但是其是所生成的光的不良吸收体。 在身体的表面上是半导体材料的薄区域，其是所产生的光的良好吸收体，并且其折射率基本上与身体的材料的折射率相匹配。 薄半导体材料区域适于吸收来自身体的光并将光转换成自由电子。 在半导体材料层的表面上是适于发射形成在半导体材料层中的电子的正电功能降低材料的薄膜。
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公开(公告)号：US3916339A
公开(公告)日：1975-10-28
申请号：US52705374
申请日：1974-11-25
Applicant: RCA CORP
Inventor： LADANY IVAN , MARINELLI DONALD PAUL , KRESSEL HENRY , CANNULI VINCENT MICHAEL
CPC classification number: H01S5/0425 , H01S5/0421 , H01S5/223 , H01S5/305
Abstract: A diode laser is improved in order to produce an output in a single longitudinal mode. The laser has a rectangular body with two regions of differing conductivity type material. Extending from one surface of the rectangular body and into one of the regions of differing conductivity material is a third region. Although the third region is composed of the same general conductivity type material as the region into which it extends, it is more highly doped with conductivity modifiers (more conductive). This third region extends along one surface between the ends of the body and is spaced from the sides of the body. An electrical contact stripe is positioned on the one surface so that a portion of its width overlaps a portion of the width of the third region.
Abstract translation: 改进二极管激光器以便在单个纵向模式中产生输出。 激光器具有具有不同导电类型材料的两个区域的矩形体。 从矩形体的一个表面延伸到不同导电性材料的区域之一中的是第三区域。 虽然第三区域由与其延伸的区域相同的一般导电类型的材料组成，但是它更加掺杂有导电性改性剂（更具导电性）。 该第三区域沿主体的端部之间的一个表面延伸并且与主体的侧面间隔开。 电接触条被定位在一个表面上，使得其宽度的一部分与第三区域的宽度的一部分重叠。
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公开(公告)号：US3883888A
公开(公告)日：1975-05-13
申请号：US41475773
申请日：1973-11-12
Applicant: RCA CORP
Inventor： KRESSEL HENRY , LOCKWOOD HARRY FRANCIS
CPC classification number: H01L33/24 , H01S5/10 , H01S5/106 , H01S2301/18
Abstract: A single crystalline body of three conductivity regions. The center conductivity region forms junctions with the other two regions that diverge from each other as the junctions extend toward the emitting surface of the light emitting diode. The divergent junction structure improves the waveguiding of the generated light toward the emitting edge.
Abstract translation: 三个导电区域的单晶体。 中心导电区域随着接头向发光二极管的发射表面延伸而与彼此分开的另外两个区域形成结。 发散结结构改善了所产生的光向发射边缘的波导。
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公开(公告)号：US3537029A
公开(公告)日：1970-10-27
申请号：US3537029D
申请日：1968-06-10
Applicant: RCA CORP
Inventor： KRESSEL HENRY , HAWRYLO FRANK Z
CPC classification number: H01S5/32 , H01L33/00 , H01S5/20 , H01S5/30 , H01S5/4087 , Y10S148/032 , Y10S148/107 , Y10S438/956
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