公开(公告)号：US3887880A

公开(公告)日：1975-06-03

申请号：US36356373

申请日：1973-05-24

Applicant: RCA CORP

Inventor： LEIDICH ARTHUR JOHN

IPC: H03F1/30 ,  H03F3/20 ,  H03F3/213 ,  H03F3/30 ,  H03F3/04

CPC classification number: H03F1/307 ,  H03F3/213 ,  H03F3/3088

Abstract: Stacked transistor power amplifier stages in an integratedcircuit quasi-linear amplifier are supplied quiescent bias currents which are in inverse proportion to their forward current gains. This permits selection of their quiescent collector currents to be at sufficiently low levels to reduce to low values both cross-over distortion and quiescent dissipation.

Abstract translation: 集成电路准线性放大器中的堆叠晶体管功率放大器级提供与其正向电流增益成反比的静态偏置电流。 这允许其静态集电极电流的选择处于足够低的水平，以降低交叉失真和静态耗散的低值。

公开(公告)号：US3914684A

公开(公告)日：1975-10-21

申请号：US40399073

申请日：1973-10-05

Applicant: RCA CORP

Inventor： LEIDICH ARTHUR JOHN

IPC: H03F1/30 ,  G05F1/56 ,  G05F3/22 ,  G05F3/26 ,  H03F3/34 ,  H03F3/343 ,  H03F3/347 ,  H03F3/45 ,  H03G11/08 ,  G05F3/08

CPC classification number: G05F1/56 ,  G05F3/222 ,  H03F3/343 ,  H03F3/45479 ,  H03G11/08 ,  Y10T307/414

Abstract: A first current is applied to the joined emitter electrodes of a first and a second transistor to be split into a first and a second fractions related in the ratio hfen to 1, which fractions flow as their respective collector currents. (The common-emitter forward current gain of the first transistor is hfe.) A first and a second paths extend from a common connection to respective base electrodes of the first and second transistors. Each path includes n junction diode(s) connected in series with the baseemitter junction of the transistor to which the path connects. A second current related to the first is applied to the second path to apply additional forward bias to the n diode(s) therein.

Abstract translation: 将第一电流施加到第一和第二晶体管的结合的发射极电极，以将其分为与比例hfen至1相关的第一和第二分数，该分数作为它们各自的集电极电流流动。 （第一晶体管的共发射极正向电流增益为hfe）。第一和第二路径从公共连接延伸到第一和第二晶体管的相应基极。 每个路径包括与路径连接的晶体管的基极 - 发射极点串联连接的n个结二极管。 与第一路径相关的第二电流被施加到第二路径以向其中的n个二极管施加额外的正向偏置。

公开(公告)号：US3904931A

公开(公告)日：1975-09-09

申请号：US38530173

申请日：1973-08-03

Applicant: RCA CORP

Inventor： LEIDICH ARTHUR JOHN

IPC: H01L29/66 ,  H01L29/74 ,  H02H9/04 ,  H02H3/20 ,  H02H1/04

CPC classification number: H02H9/041

Abstract: A silicon controlled rectifier (SCR) is connected at its cathode to one terminal of the device to be protected and at its anode to the other terminal of the device. When an overvoltage occurs, a zener diode connected between the trigger gate and anode of the SCR is driven into conduction in the zener mode and this causes anode-to-cathode conduction through the SCR, placing a low impedance path across the device to be protected. When the overvoltage is removed, the space-charge at the trigger electrode-bias electrode junction of the SCR is quickly dissipated, thereby opening the low impedance path.

Abstract translation: 可控硅整流器（SCR）在其阴极处连接到要保护的器件的一个端子，并将其阳极连接到器件的另一个端子。 当发生过电压时，连接在SCR的触发栅极和阳极之间的齐纳二极管以齐纳模式被驱动为导通，并且这导致通过SCR的阳极到阴极的导通，在器件上放置一个低阻抗路径以进行保护 。 当去除过电压时，SCR的触发电极 - 偏置电极结处的空间电荷迅速消散，从而打开低阻抗路径。